STMicroelectronics STGW35HF60WD
- Part Number:
- STGW35HF60WD
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2494708-STGW35HF60WD
- Description:
- IGBT 600V 60A 200W TO-247
- ECAD Model:
-
- Datasheet:
- STGW35HF60WD
STMicroelectronics STGW35HF60WD technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW35HF60WD.
- Lifecycle StatusNRND (Last Updated: 8 months ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight6.500007g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureLOW CONDUCTION LOSS
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation200W
- Base Part NumberSTGW35
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Input TypeStandard
- Turn On Delay Time30 ns
- Power - Max200W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Turn-Off Delay Time175 ns
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current60A
- Reverse Recovery Time50 ns
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2.5V
- Turn On Time45 ns
- Test Condition400V, 20A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 20A
- Turn Off Time-Nom (toff)295 ns
- Gate Charge140nC
- Current - Collector Pulsed (Icm)150A
- Td (on/off) @ 25°C30ns/175ns
- Switching Energy290μJ (on), 185μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5.75V
- Height24.45mm
- Length15.75mm
- Width5.15mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STGW35HF60WD Description
The STGW35HF60WD is based on a new
advanced planar technology concept to yield an
IGBT with more stable switching performance
(Eoff) versus temperature, as well as lower
conduction losses. The device is tailored to high
switching frequency operation (over 100 kHz).
STGW35HF60WD Features Improved Eoff at elevated temperature Minimal tail current Low conduction losses VCE(sat) classified for easy parallel connection Ultra-fast soft recovery antiparallel diode
STGW35HF60WD Applications Welding High-frequency converters Power factor correction
STGW35HF60WD Features Improved Eoff at elevated temperature Minimal tail current Low conduction losses VCE(sat) classified for easy parallel connection Ultra-fast soft recovery antiparallel diode
STGW35HF60WD Applications Welding High-frequency converters Power factor correction
STGW35HF60WD More Descriptions
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3 Tab) TO-247 Tube
STGW35HF60WD Series 600 V 30 A Flange Mount Ultra Fast IGBT - TO-247
35 A, 600 V ultrafast IGBT with ultrafast diode
IGBT, SINGLE, 600V, 60A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
STGW35HF60WD Series 600 V 30 A Flange Mount Ultra Fast IGBT - TO-247
35 A, 600 V ultrafast IGBT with ultrafast diode
IGBT, SINGLE, 600V, 60A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
The three parts on the right have similar specifications to STGW35HF60WD.
-
ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryMax Power DissipationBase Part NumberPin CountNumber of ElementsElement ConfigurationInput TypeTurn On Delay TimePower - MaxTransistor ApplicationPolarity/Channel TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeFactory Lead TimePower DissipationIGBT TypeSeriesVoltage - Rated DCCurrent RatingRise TimeContinuous Collector CurrentREACH SVHCPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Voltage - Collector Emitter Breakdown (Max)View Compare
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STGW35HF60WDNRND (Last Updated: 8 months ago)Through HoleThrough HoleTO-247-336.500007gSILICON-55°C~150°C TJTubee3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)LOW CONDUCTION LOSSInsulated Gate BIP Transistors200WSTGW3531SingleStandard30 ns200WPOWER CONTROLN-CHANNEL175 ns600V60A50 ns600V2.5V45 ns400V, 20A, 10 Ω, 15V2.5V @ 15V, 20A295 ns140nC150A30ns/175ns290μJ (on), 185μJ (off)20V5.75V24.45mm15.75mm5.15mmNoROHS3 CompliantLead Free------------- -
-Through HoleThrough HoleTO-247-33---55°C~175°C TJTube-Active1 (Unlimited)-EAR99---283WSTGW40--SingleStandard-----600V80A41ns600V2.35V-400V, 40A, 10 Ω, 15V2.3V @ 15V, 40A-226nC160A52ns/208ns456μJ (on), 411μJ (off)--20.15mm15.75mm5.15mmNoROHS3 CompliantLead Free20 Weeks283WTrench Field Stop---------
-
ACTIVE (Last Updated: 8 months ago)Through HoleThrough HoleTO-247-3338.000013gSILICON-55°C~150°C TJTubee3Active1 (Unlimited)3EAR99Tin (Sn)ULTRA FASTInsulated Gate BIP Transistors200WSTGW2031SingleStandard31 ns-POWER CONTROLN-CHANNEL100 ns600V60A44ns600V2.5V42.5 ns390V, 20A, 3.3 Ω, 15V2.5V @ 15V, 20A280 ns100nC150A31ns/100ns220μJ (on), 330μJ (off)20V5.75V20.15mm15.75mm5.15mmNoROHS3 CompliantLead Free8 Weeks200W-PowerMESH™600V30A11.5ns30ANo SVHC---
-
ACTIVE (Last Updated: 8 months ago)Through HoleThrough HoleTO-247-3338.000013g--55°C~175°C TJTube-Active1 (Unlimited)-EAR99--Insulated Gate BIP Transistors468WSTGW40--SingleStandard-468W-N-CHANNEL-1.2kV80A355 ns1.2kV1.85V-600V, 40A, 10 Ω, 15V2.3V @ 15V, 40A-125nC160A35ns/140ns1.5mJ (on), 2.25mJ (off)20V7V----ROHS3 CompliantLead Free30 Weeks-Trench Field Stop-----No SVHCNOT SPECIFIEDNOT SPECIFIED1200V
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