STMicroelectronics STGPL6NC60D
- Part Number:
- STGPL6NC60D
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2494959-STGPL6NC60D
- Description:
- IGBT 600V 14A 56W TO220
- ECAD Model:
-
- Datasheet:
- STGPL6NC60D
STMicroelectronics STGPL6NC60D technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGPL6NC60D.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesPowerMESH™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation56W
- Base Part NumberSTGPL6
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- Element ConfigurationSingle
- Input TypeStandard
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current42A
- Reverse Recovery Time50ns
- JEDEC-95 CodeTO-220AB
- Collector Emitter Breakdown Voltage600V
- Current - Collector (Ic) (Max)14A
- Max Breakdown Voltage600V
- Turn On Time10.5 ns
- Test Condition390V, 3A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 3A
- Turn Off Time-Nom (toff)122 ns
- Gate Charge12nC
- Current - Collector Pulsed (Icm)18A
- Td (on/off) @ 25°C6.7ns/46ns
- Switching Energy46.5μJ (on), 23.5μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5.75V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
STGPL6NC60D Description
STGPL6NC60D is a type of hyper-fast IGBT developed by STMicroelectronics. On the basis of PowerMESH technology and a new lifetime control system, it delivers the best trade-off between on-state voltage and switching losses, which enables very high operating frequencies. The STGPL6NC60D IGBT is packaged in TO-220 for saving board space.
STGPL6NC60D Features
PowerMESH technology A new lifetime control system Low CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra-fast recovery antiparallel diode packaged in TO-220
STGPL6NC60D Applications
Very high-frequency operation High-frequency lamp ballast SMPS and PFC (hard switching too)
STGPL6NC60D is a type of hyper-fast IGBT developed by STMicroelectronics. On the basis of PowerMESH technology and a new lifetime control system, it delivers the best trade-off between on-state voltage and switching losses, which enables very high operating frequencies. The STGPL6NC60D IGBT is packaged in TO-220 for saving board space.
STGPL6NC60D Features
PowerMESH technology A new lifetime control system Low CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra-fast recovery antiparallel diode packaged in TO-220
STGPL6NC60D Applications
Very high-frequency operation High-frequency lamp ballast SMPS and PFC (hard switching too)
STGPL6NC60D More Descriptions
Trans IGBT Chip N-CH 600V 42A 3-Pin (3 Tab) TO-220 Tube
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB
6A, 600 V hyper fast IGBT with very fast diode
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB
6A, 600 V hyper fast IGBT with very fast diode
The three parts on the right have similar specifications to STGPL6NC60D.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationBase Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationInput TypeTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeJEDEC-95 CodeCollector Emitter Breakdown VoltageCurrent - Collector (Ic) (Max)Max Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxRadiation HardeningRoHS StatusNumber of PinsPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Power - MaxHeightLengthWidthPower DissipationCollector Emitter Saturation VoltageIGBT TypeTurn On Delay TimeRise TimeTurn-Off Delay TimeREACH SVHCLead FreeView Compare
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STGPL6NC60DACTIVE (Last Updated: 7 months ago)8 WeeksThrough HoleThrough HoleTO-220-3SILICON-55°C~150°C TJTubePowerMESH™e3Active1 (Unlimited)3EAR99Matte Tin (Sn)Insulated Gate BIP Transistors56WSTGPL63R-PSFM-T31SingleStandardPOWER CONTROLN-CHANNEL600V42A50nsTO-220AB600V14A600V10.5 ns390V, 3A, 10 Ω, 15V2.9V @ 15V, 3A122 ns12nC18A6.7ns/46ns46.5μJ (on), 23.5μJ (off)20V5.75VNoROHS3 Compliant---------------- -
ACTIVE (Last Updated: 8 months ago)8 WeeksThrough HoleThrough HoleTO-220-3--55°C~150°C TJTube--Active1 (Unlimited)-EAR99--38WSTGP3---SingleStandard--2.95V7.5A85 ns-600V---400V, 1.5A, 100 Ω, 15V2.95V @ 15V, 1.5A-12nC18A11ns/60ns19μJ (on), 12μJ (off)---ROHS3 Compliant3NOT SPECIFIEDNOT SPECIFIED38W15.75mm10.4mm4.6mm--------
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-20 WeeksThrough HoleThrough HoleTO-220-3--55°C~175°C TJTube--Active1 (Unlimited)-EAR99-Insulated Gate BIP Transistors167WSTGP20---SingleStandard-N-CHANNEL600V40A40ns-600V---400V, 20A, 15V2.2V @ 15V, 20A-116nC80A38ns/149ns200μJ (on), 130μJ (off)20V-NoROHS3 Compliant-------167W2.3VTrench Field Stop-----
-
ACTIVE (Last Updated: 8 months ago)8 WeeksThrough HoleThrough HoleTO-220-3SILICON-55°C~150°C TJTubePowerMESH™-Active1 (Unlimited)3EAR99-Insulated Gate BIP Transistors130WSTGP193-1SingleStandardPOWER CONTROLN-CHANNEL600V40A31nsTO-220AB600V--32 ns390V, 12A, 10 Ω, 15V2.5V @ 15V, 12A272 ns53nC60A25ns/97ns85μJ (on), 189μJ (off)20V5.75VNoROHS3 Compliant3---15.75mm10.4mm4.6mm130W2.5V-25 ns7ns97 nsNo SVHCLead Free
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