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STGP8NC60KD

STMicroelectronics STGP8NC60KD

Part Number:
STGP8NC60KD
Manufacturer:
STMicroelectronics
Ventron No:
3072031-STGP8NC60KD
Description:
IGBT 600V 15A 65W TO220
ECAD Model:
Datasheet:
STGP8NC60KD

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Specifications
STMicroelectronics STGP8NC60KD technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGP8NC60KD.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    PowerMESH™
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    65W
  • Base Part Number
    STGP8
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    7A
  • Reverse Recovery Time
    23.5ns
  • JEDEC-95 Code
    TO-220AB
  • Collector Emitter Breakdown Voltage
    600V
  • Current - Collector (Ic) (Max)
    15A
  • Turn On Time
    23 ns
  • Test Condition
    390V, 3A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.75V @ 15V, 3A
  • Turn Off Time-Nom (toff)
    242 ns
  • Gate Charge
    19nC
  • Current - Collector Pulsed (Icm)
    30A
  • Td (on/off) @ 25°C
    17ns/72ns
  • Switching Energy
    55μJ (on), 85μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Height
    9.15mm
  • Length
    10.4mm
  • Width
    4.6mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STGP8NC60KD Description This IGBT utilizes the advanced PowerMESH? process resulting in an excellent trade-off between switching performance and low on-state behavior.

STGP8NC60KD Features Lower on voltage drop (VCE(sat)) Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra-fast recovery antiparallel diode Short circuit withstand time 10 μs

STGP8NC60KD Applications High-frequency motor controls SMPS and PFC in both hard switch and resonant topologies Motor drivers

STGP8NC60KD More Descriptions
Trans IGBT Chip N-CH 600V 7A 65000mW 3-Pin(3 Tab) TO-220AB Tube
STGP8NC60K Series N-Channel 600V 8 A Short Circuit Rated PowerMESH IGBT - TO-220
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT, SINGLE, 600V, 15A, TO-220; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 65W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3
Igbt, 600V, 15A, To-220; Continuous Collector Current:15A; Collector Emitter Saturation Voltage:2.2V; Power Dissipation:65W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- Rohs Compliant: Yes |Stmicroelectronics STGP8NC60KD
Product Comparison
The three parts on the right have similar specifications to STGP8NC60KD.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Max Power Dissipation
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Input Type
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Current - Collector (Ic) (Max)
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Power Dissipation
    Collector Emitter Saturation Voltage
    IGBT Type
    Weight
    JESD-609 Code
    Terminal Finish
    Voltage - Rated DC
    Current Rating
    Turn On Delay Time
    Drain to Source Voltage (Vdss)
    Continuous Drain Current (ID)
    Continuous Collector Current
    REACH SVHC
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Power - Max
    View Compare
  • STGP8NC60KD
    STGP8NC60KD
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    PowerMESH™
    Active
    1 (Unlimited)
    3
    EAR99
    Insulated Gate BIP Transistors
    65W
    STGP8
    3
    1
    Single
    Standard
    POWER CONTROL
    N-CHANNEL
    600V
    7A
    23.5ns
    TO-220AB
    600V
    15A
    23 ns
    390V, 3A, 10 Ω, 15V
    2.75V @ 15V, 3A
    242 ns
    19nC
    30A
    17ns/72ns
    55μJ (on), 85μJ (off)
    20V
    6.5V
    9.15mm
    10.4mm
    4.6mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGP30H60DF
    STGP30H60DF
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    20 Weeks
    Through Hole
    Through Hole
    TO-220-3
    -
    -
    -40°C~175°C TJ
    Tube
    -
    Active
    1 (Unlimited)
    -
    EAR99
    Insulated Gate BIP Transistors
    260W
    STGP30
    -
    -
    Single
    Standard
    -
    N-CHANNEL
    600V
    60A
    110 ns
    -
    600V
    -
    -
    400V, 30A, 10 Ω, 15V
    2.4V @ 15V, 30A
    -
    105nC
    120A
    50ns/160ns
    350μJ (on), 400μJ (off)
    20V
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    260W
    2.4V
    Trench Field Stop
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STGP8NC60KD vs STGP30H60DF
  • STGP10NB60S
    STGP10NB60S
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    PowerMESH™
    Active
    1 (Unlimited)
    3
    EAR99
    Insulated Gate BIP Transistors
    80W
    STGP10
    3
    1
    Single
    Standard
    POWER CONTROL
    N-CHANNEL
    600V
    29A
    -
    TO-220AB
    600V
    -
    1160 ns
    480V, 10A, 1k Ω, 15V
    1.75V @ 15V, 10A
    3100 ns
    33nC
    80A
    700ns/1.2μs
    600μJ (on), 5mJ (off)
    20V
    5V
    9.15mm
    10.4mm
    4.6mm
    No
    ROHS3 Compliant
    Lead Free
    80W
    1.7V
    -
    6.000006g
    e3
    Matte Tin (Sn) - annealed
    600V
    10A
    7 μs
    600V
    10A
    10A
    No SVHC
    -
    -
    -
    -
    -
    STGP8NC60KD vs STGP10NB60S
  • STGP19NC60W
    STGP19NC60W
    STMicroelectronics
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    SILICON
    -65°C~150°C TJ
    Tube
    PowerMESH™
    Obsolete
    1 (Unlimited)
    3
    -
    Insulated Gate BIP Transistors
    130W
    STGP19
    3
    1
    Single
    Standard
    POWER CONTROL
    N-CHANNEL
    600V
    40A
    -
    TO-220AB
    600V
    -
    33 ns
    390V, 12A, 10 Ω, 15V
    2.5V @ 15V, 12A
    204 ns
    53nC
    -
    25ns/90ns
    81μJ (on), 125μJ (off)
    20V
    5.75V
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    130W
    STGP8NC60KD vs STGP19NC60W
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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