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STGP8NC60K

STMicroelectronics STGP8NC60K

Part Number:
STGP8NC60K
Manufacturer:
STMicroelectronics
Ventron No:
2495979-STGP8NC60K
Description:
IGBT 600V 15A 65W TO220
ECAD Model:
Datasheet:
STGP8NC60K

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Specifications
STMicroelectronics STGP8NC60K technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGP8NC60K.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    PowerMESH™
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    65W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STGP8
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Input Type
    Standard
  • Turn On Delay Time
    17 ns
  • Power - Max
    65W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    106 ns
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    15A
  • JEDEC-95 Code
    TO-220AB
  • Collector Emitter Breakdown Voltage
    600V
  • Turn On Time
    23 ns
  • Test Condition
    390V, 3A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.75V @ 15V, 3A
  • Turn Off Time-Nom (toff)
    242 ns
  • Gate Charge
    19nC
  • Current - Collector Pulsed (Icm)
    30A
  • Td (on/off) @ 25°C
    17ns/72ns
  • Switching Energy
    55μJ (on), 85μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STGP8NC60K Description
STMicroelectronics has created an innovative family of IGBTs, the PowerMESHTM IGBTs, with remarkable performances using the most recent high voltage technology based on a proprietary strip arrangement. A family with the suffix "K" is designated as being short circuit tolerant and optimized for high frequency motor control applications.

STGP8NC60K Features
Lower on voltage drop (Vcesat)
Lower CRES / CIES ratio (no cross-conduction susceptibility)
Very soft ultra fast recovery antiparallel diode
Short circuit withstand time 10μs

STGP8NC60K Applications
High frequency motor controls
SMPS and PFC in both hard switch and resonant topologies
Motor drivers
STGP8NC60K More Descriptions
STGP8NC60K Series N-Channel 600V 8 A Short Circuit Rated PowerMESH IGBT - TO-220
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Power MOSFET Transistors N Ch 600V 0.270 ohm 14A Pwr MOSFET
New short circuit rugged "K" series
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to STGP8NC60K.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Element Configuration
    Input Type
    Turn On Delay Time
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    RoHS Status
    Lead Free
    Factory Lead Time
    Number of Pins
    Power Dissipation
    Case Connection
    Reverse Recovery Time
    Collector Emitter Saturation Voltage
    IGBT Type
    Height
    Length
    Width
    Radiation Hardening
    Lifecycle Status
    REACH SVHC
    View Compare
  • STGP8NC60K
    STGP8NC60K
    STMicroelectronics
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    -55°C~150°C TJ
    Tube
    PowerMESH™
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    Insulated Gate BIP Transistors
    65W
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    STGP8
    3
    R-PSFM-T3
    Not Qualified
    1
    Single
    Standard
    17 ns
    65W
    POWER CONTROL
    N-CHANNEL
    106 ns
    600V
    15A
    TO-220AB
    600V
    23 ns
    390V, 3A, 10 Ω, 15V
    2.75V @ 15V, 3A
    242 ns
    19nC
    30A
    17ns/72ns
    55μJ (on), 85μJ (off)
    20V
    6.5V
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGP30V60DF
    STGP30V60DF
    STMicroelectronics
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    -55°C~175°C TJ
    Tube
    -
    -
    Active
    1 (Unlimited)
    3
    EAR99
    -
    Insulated Gate BIP Transistors
    258W
    -
    -
    -
    STGP30
    -
    -
    -
    1
    Single
    Standard
    -
    -
    POWER CONTROL
    N-CHANNEL
    -
    600V
    60A
    TO-220AB
    600V
    59 ns
    400V, 30A, 10 Ω, 15V
    2.3V @ 15V, 30A
    225 ns
    163nC
    120A
    45ns/189ns
    383μJ (on), 233μJ (off)
    20V
    -
    ROHS3 Compliant
    -
    20 Weeks
    3
    258W
    COLLECTOR
    53ns
    2.35V
    Trench Field Stop
    15.75mm
    10.4mm
    4.6mm
    No
    -
    -
    STGP8NC60K vs STGP30V60DF
  • STGP100N30
    STGP100N30
    STMicroelectronics
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    -55°C~150°C TJ
    Tube
    STripFET™
    -
    Obsolete
    1 (Unlimited)
    3
    -
    -
    Insulated Gate BIP Transistors
    250W
    -
    -
    -
    STGP100
    3
    R-PSFM-T3
    -
    1
    Single
    Standard
    -
    250W
    GENERAL PURPOSE SWITCHING
    N-CHANNEL
    -
    330V
    90A
    TO-220AB
    330V
    -
    180V, 25A, 10 Ω, 15V
    2.5V @ 15V, 50A
    310 ns
    -
    -
    -/134ns
    -
    20V
    5.5V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    No
    -
    -
    STGP8NC60K vs STGP100N30
  • STGP10M65DF2
    STGP10M65DF2
    STMicroelectronics
    Through Hole
    Through Hole
    TO-220-3
    -
    -55°C~175°C TJ
    Tube
    -
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    115W
    NOT SPECIFIED
    -
    NOT SPECIFIED
    STGP10
    -
    -
    -
    -
    Single
    Standard
    -
    115W
    -
    -
    -
    2V
    20A
    -
    650V
    -
    400V, 10A, 22 Ω, 15V
    2V @ 15V, 10A
    -
    28nC
    40A
    19ns/91ns
    120μJ (on), 270μJ (off)
    -
    -
    ROHS3 Compliant
    -
    30 Weeks
    3
    -
    -
    96 ns
    1.55V
    Trench Field Stop
    -
    -
    -
    -
    ACTIVE (Last Updated: 7 months ago)
    No SVHC
    STGP8NC60K vs STGP10M65DF2
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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