STMicroelectronics STGP7NC60HD
- Part Number:
- STGP7NC60HD
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2494424-STGP7NC60HD
- Description:
- IGBT 600V 25A 80W TO220
- Datasheet:
- STGP7NC60HD
STMicroelectronics STGP7NC60HD technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGP7NC60HD.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight2.299997g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesPowerMESH™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryInsulated Gate BIP Transistors
- Voltage - Rated DC600V
- Max Power Dissipation80W
- Current Rating14A
- Base Part NumberSTGP7
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation80W
- Input TypeStandard
- Turn On Delay Time18.5 ns
- Transistor ApplicationPOWER CONTROL
- Rise Time7ns
- Drain to Source Voltage (Vdss)600V
- Polarity/Channel TypeN-CHANNEL
- Turn-Off Delay Time72 ns
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current25A
- Reverse Recovery Time37ns
- Continuous Drain Current (ID)14A
- JEDEC-95 CodeTO-220AB
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2.5V
- Turn On Time25.5 ns
- Test Condition390V, 7A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 7A
- Continuous Collector Current14A
- Turn Off Time-Nom (toff)221 ns
- Gate Charge35nC
- Current - Collector Pulsed (Icm)50A
- Td (on/off) @ 25°C18.5ns/72ns
- Switching Energy95μJ (on), 115μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5.75V
- Height9.15mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STGP7NC60HD Description
The STGP7NC60HD is a high-speed IGBT built with sophisticated PowerMESHTM technology. This method ensures a good balance between switching performance and low on-state behavior. IGBTs like the STGP7NC60HD are ideal for resonant or soft switching applications.
STGP7NC60HD Features Off losses include tail current
Losses include diode recovery energy
High-frequency operation up to 70 kHz
Low on-voltage drop (VCE(sat))
Very soft ultra-fast recovery anti parallel diode
STGP7NC60HD Applications High-frequency inverters
SMPS and PFC in both hard switch and resonant topologies
Motor drivers
STGP7NC60HD Features Off losses include tail current
Losses include diode recovery energy
High-frequency operation up to 70 kHz
Low on-voltage drop (VCE(sat))
Very soft ultra-fast recovery anti parallel diode
STGP7NC60HD Applications High-frequency inverters
SMPS and PFC in both hard switch and resonant topologies
Motor drivers
STGP7NC60HD More Descriptions
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(3 Tab) TO-220AB Tube / IGBT 600V 25A 80W TO220
STMICROELECTRONICS STGP7NC60HD IGBT Single Transistor, 25 A, 2.5 V, 80 W, 600 V, TO-220, 3 Pins
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode
STGP7NC60HD Series N-Channel 600 V 25 A Very Fast PowerMESH IGBT - TO-220
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT, 600V, 7A, TO-220; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Ope
STMICROELECTRONICS STGP7NC60HD IGBT Single Transistor, 25 A, 2.5 V, 80 W, 600 V, TO-220, 3 Pins
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode
STGP7NC60HD Series N-Channel 600 V 25 A Very Fast PowerMESH IGBT - TO-220
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT, 600V, 7A, TO-220; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Ope
The three parts on the right have similar specifications to STGP7NC60HD.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationInput TypeTurn On Delay TimeTransistor ApplicationRise TimeDrain to Source Voltage (Vdss)Polarity/Channel TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeContinuous Drain Current (ID)JEDEC-95 CodeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcContinuous Collector CurrentTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeIGBT TypePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusPower - MaxView Compare
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STGP7NC60HDACTIVE (Last Updated: 8 months ago)8 WeeksThrough HoleThrough HoleTO-220-332.299997gSILICON-55°C~150°C TJTubePowerMESH™e3Active1 (Unlimited)3EAR99Tin (Sn)Insulated Gate BIP Transistors600V80W14ASTGP731Single80WStandard18.5 nsPOWER CONTROL7ns600VN-CHANNEL72 ns600V25A37ns14ATO-220AB600V2.5V25.5 ns390V, 7A, 10 Ω, 15V2.5V @ 15V, 7A14A221 ns35nC50A18.5ns/72ns95μJ (on), 115μJ (off)20V5.75V9.15mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free-------
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-20 WeeksThrough HoleThrough HoleTO-220-3----55°C~175°C TJTube--Active1 (Unlimited)-EAR99-Insulated Gate BIP Transistors-167W-STGP20--Single167WStandard----N-CHANNEL-600V40A40ns--600V2.3V-400V, 20A, 15V2.2V @ 15V, 20A--116nC80A38ns/149ns200μJ (on), 130μJ (off)20V-----NoROHS3 Compliant-Trench Field Stop-----
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--Through HoleThrough HoleTO-220-3--SILICON-65°C~150°C TJTubePowerMESH™-Obsolete1 (Unlimited)3--Insulated Gate BIP Transistors-130W-STGP1931Single-Standard-POWER CONTROL--N-CHANNEL-600V40A--TO-220AB600V-33 ns390V, 12A, 10 Ω, 15V2.5V @ 15V, 12A-204 ns53nC-25ns/90ns81μJ (on), 125μJ (off)20V5.75V-----ROHS3 Compliant--NOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not Qualified130W
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ACTIVE (Last Updated: 8 months ago)8 WeeksThrough HoleThrough HoleTO-220-33-SILICON-55°C~150°C TJTubePowerMESH™-Active1 (Unlimited)3EAR99-Insulated Gate BIP Transistors-130W-STGP1931Single130WStandard25 nsPOWER CONTROL7ns-N-CHANNEL97 ns600V40A31ns-TO-220AB600V2.5V32 ns390V, 12A, 10 Ω, 15V2.5V @ 15V, 12A-272 ns53nC60A25ns/97ns85μJ (on), 189μJ (off)20V5.75V15.75mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free------
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