STMicroelectronics STGP6NC60HD
- Part Number:
- STGP6NC60HD
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2494409-STGP6NC60HD
- Description:
- IGBT 600V 15A 56W TO220
- ECAD Model:
-
- Datasheet:
- STGP6NC60HD
STMicroelectronics STGP6NC60HD technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGP6NC60HD.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesPowerMESH™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryInsulated Gate BIP Transistors
- Voltage - Rated DC600V
- Max Power Dissipation56W
- Current Rating15A
- Base Part NumberSTGP6
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation56W
- Input TypeStandard
- Turn On Delay Time12 ns
- Transistor ApplicationPOWER CONTROL
- Rise Time5ns
- Polarity/Channel TypeN-CHANNEL
- Turn-Off Delay Time76 ns
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current15A
- Reverse Recovery Time21 ns
- JEDEC-95 CodeTO-220AB
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.9V
- Turn On Time17.3 ns
- Test Condition390V, 3A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 3A
- Turn Off Time-Nom (toff)222 ns
- Gate Charge13.6nC
- Current - Collector Pulsed (Icm)21A
- Td (on/off) @ 25°C12ns/76ns
- Switching Energy20μJ (on), 68μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5.75V
- Height9.15mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STGP6NC60HD Description
STGP6NC60HD is an N-Channel IGBT that employs the most recent high-voltage technology and is based on a unique strip arrangement. STMicroelectronics has produced an innovative family of IGBTs, the PowerMESHTM IGBTs, that exhibit exceptional performance. The suffix "H" denotes a family specialized for high-frequency applications, with very high switching capabilities (reduced tfall) and low voltage drop.
STGP6NC60HD Features
Low VCE(sat)
Low CRES/CIES ratio (no cross-conduction susceptibility)
Very soft ultra fast recovery antiparallel diode
High-frequency operation
STGP6NC60HD Applications
High-frequency inverters
SMPS and PFC in both hard switch and resonant topologies
Motor drivers
STGP6NC60HD is an N-Channel IGBT that employs the most recent high-voltage technology and is based on a unique strip arrangement. STMicroelectronics has produced an innovative family of IGBTs, the PowerMESHTM IGBTs, that exhibit exceptional performance. The suffix "H" denotes a family specialized for high-frequency applications, with very high switching capabilities (reduced tfall) and low voltage drop.
STGP6NC60HD Features
Low VCE(sat)
Low CRES/CIES ratio (no cross-conduction susceptibility)
Very soft ultra fast recovery antiparallel diode
High-frequency operation
STGP6NC60HD Applications
High-frequency inverters
SMPS and PFC in both hard switch and resonant topologies
Motor drivers
STGP6NC60HD More Descriptions
STMICROELECTRONICS STGP6NC60HD IGBT Single Transistor, 15 A, 2.5 V, 56 W, 600 V, TO-220, 3 Pins
Trans IGBT Chip N-CH 600V 15A 62500mW 3-Pin(3 Tab) TO-220AB Tube
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Igbt, To-220; Continuous Collector Current:15A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:56W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Msl:- Rohs Compliant: Yes |Stmicroelectronics STGP6NC60HD
Using the latest high voltage technology based on a patented strip layout, St Microelectronics has designed an advaced family of IGBTs, the PowerMESH(TM) IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.
Trans IGBT Chip N-CH 600V 15A 62500mW 3-Pin(3 Tab) TO-220AB Tube
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Igbt, To-220; Continuous Collector Current:15A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:56W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Msl:- Rohs Compliant: Yes |Stmicroelectronics STGP6NC60HD
Using the latest high voltage technology based on a patented strip layout, St Microelectronics has designed an advaced family of IGBTs, the PowerMESH(TM) IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.
The three parts on the right have similar specifications to STGP6NC60HD.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationInput TypeTurn On Delay TimeTransistor ApplicationRise TimePolarity/Channel TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeJEDEC-95 CodeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeJESD-30 CodePower - MaxPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)IGBT TypeView Compare
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STGP6NC60HDACTIVE (Last Updated: 8 months ago)8 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~150°C TJTubePowerMESH™e3Active1 (Unlimited)3EAR99Tin (Sn)Insulated Gate BIP Transistors600V56W15ASTGP631Single56WStandard12 nsPOWER CONTROL5nsN-CHANNEL76 ns600V15A21 nsTO-220AB600V1.9V17.3 ns390V, 3A, 10 Ω, 15V2.5V @ 15V, 3A222 ns13.6nC21A12ns/76ns20μJ (on), 68μJ (off)20V5.75V9.15mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free------ -
--Through HoleThrough HoleTO-220-3-SILICON-55°C~150°C TJTubeSTripFET™-Obsolete1 (Unlimited)3--Insulated Gate BIP Transistors-250W-STGP10031Single-Standard-GENERAL PURPOSE SWITCHING-N-CHANNEL-330V90A-TO-220AB330V--180V, 25A, 10 Ω, 15V2.5V @ 15V, 50A310 ns---/134ns-20V5.5V----NoROHS3 Compliant-R-PSFM-T3250W---
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ACTIVE (Last Updated: 7 months ago)30 WeeksThrough HoleThrough HoleTO-220-33--55°C~175°C TJTube--Active1 (Unlimited)-EAR99---115W-STGP10--Single-Standard-----2V20A96 ns-650V1.55V-400V, 10A, 22 Ω, 15V2V @ 15V, 10A-28nC40A19ns/91ns120μJ (on), 270μJ (off)-----No SVHC-ROHS3 Compliant--115WNOT SPECIFIEDNOT SPECIFIEDTrench Field Stop
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ACTIVE (Last Updated: 8 months ago)8 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~150°C TJTubePowerMESH™-Active1 (Unlimited)3EAR99-Insulated Gate BIP Transistors-130W-STGP1931Single130WStandard25 nsPOWER CONTROL7nsN-CHANNEL97 ns600V40A31nsTO-220AB600V2.5V32 ns390V, 12A, 10 Ω, 15V2.5V @ 15V, 12A272 ns53nC60A25ns/97ns85μJ (on), 189μJ (off)20V5.75V15.75mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free-----
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