STMicroelectronics STGP30H60DFB
- Part Number:
- STGP30H60DFB
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2494591-STGP30H60DFB
- Description:
- TRENCH GATE FIELD-STOP IGBT, HB
- ECAD Model:
-
- Datasheet:
- STGP30H60DFB
STMicroelectronics STGP30H60DFB technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGP30H60DFB.
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Power Dissipation260W
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTGP30
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Power - Max260W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)2V
- Max Collector Current60A
- Reverse Recovery Time53 ns
- JEDEC-95 CodeTO-220AB
- Collector Emitter Breakdown Voltage600V
- Turn On Time51.1 ns
- Test Condition400V, 30A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2V @ 15V, 30A
- Turn Off Time-Nom (toff)223 ns
- IGBT TypeTrench Field Stop
- Gate Charge149nC
- Current - Collector Pulsed (Icm)120A
- Td (on/off) @ 25°C37ns/146ns
- Switching Energy383μJ (on), 293μJ (off)
- RoHS StatusROHS3 Compliant
Description
The STGP30H60DFB is a Trench gate field-stop 600 V, 30 A HB series IGBT with a trench gate field-stop. These IGBTs were created employing a cutting-edge unique trench gate field stop construction. These devices are part of the new HB series of IGBTs, which offer the best balance of conduction and switching loss for maximum frequency converter efficiency. In addition, the slightly positive VCE(sat) temperature coefficient and extremely tight parameter distribution make paralleling safer.
Features
? Tight parameter distribution ? Safe paralleling ? Positive VCE(sat) temperature coefficient ? Low thermal resistance ? Very fast soft recovery antiparallel diode ? Maximum junction temperature: TJ = 175 °C ? High speed switching series ? Minimized tail current ? Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A
Applications
? Photovoltaic inverters ? High frequency converters ? SMPS ? UPS ? AC and DC motor drives offering speed control ? Chopper and inverters
The STGP30H60DFB is a Trench gate field-stop 600 V, 30 A HB series IGBT with a trench gate field-stop. These IGBTs were created employing a cutting-edge unique trench gate field stop construction. These devices are part of the new HB series of IGBTs, which offer the best balance of conduction and switching loss for maximum frequency converter efficiency. In addition, the slightly positive VCE(sat) temperature coefficient and extremely tight parameter distribution make paralleling safer.
Features
? Tight parameter distribution ? Safe paralleling ? Positive VCE(sat) temperature coefficient ? Low thermal resistance ? Very fast soft recovery antiparallel diode ? Maximum junction temperature: TJ = 175 °C ? High speed switching series ? Minimized tail current ? Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A
Applications
? Photovoltaic inverters ? High frequency converters ? SMPS ? UPS ? AC and DC motor drives offering speed control ? Chopper and inverters
STGP30H60DFB More Descriptions
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3 Tab) TO-220AB Tube
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Igbt, Single, 600V, 60A, To-220; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.55V; Power Dissipation Pd:260W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:To-220; No. Of Pins:3Pins; Rohs Compliant: Yes |Stmicroelectronics STGP30H60DFB
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3 Tab) TO-220AB Tube
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Igbt, Single, 600V, 60A, To-220; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.55V; Power Dissipation Pd:260W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:To-220; No. Of Pins:3Pins; Rohs Compliant: Yes |Stmicroelectronics STGP30H60DFB
The three parts on the right have similar specifications to STGP30H60DFB.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeNumber of ElementsConfigurationCase ConnectionInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeJEDEC-95 CodeCollector Emitter Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRoHS StatusSeriesSubcategoryPin CountElement ConfigurationGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxRadiation HardeningLifecycle StatusNumber of PinsWeightJESD-609 CodeTerminal FinishVoltage - Rated DCCurrent RatingPower DissipationTurn On Delay TimeDrain to Source Voltage (Vdss)Continuous Drain Current (ID)Collector Emitter Saturation VoltageContinuous Collector CurrentHeightLengthWidthREACH SVHCLead FreeRise TimeTurn-Off Delay TimeView Compare
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STGP30H60DFB20 WeeksThrough HoleThrough HoleTO-220-3SILICON-55°C~175°C TJTubeActive1 (Unlimited)3EAR99260WSINGLENOT SPECIFIEDNOT SPECIFIEDSTGP30R-PSFM-T31SINGLE WITH BUILT-IN DIODECOLLECTORStandard260WPOWER CONTROLN-CHANNEL2V60A53 nsTO-220AB600V51.1 ns400V, 30A, 10 Ω, 15V2V @ 15V, 30A223 nsTrench Field Stop149nC120A37ns/146ns383μJ (on), 293μJ (off)ROHS3 Compliant---------------------------- -
-Through HoleThrough HoleTO-220-3SILICON-55°C~150°C TJTubeObsolete1 (Unlimited)3-250W---STGP100R-PSFM-T31--Standard250WGENERAL PURPOSE SWITCHINGN-CHANNEL330V90A-TO-220AB330V-180V, 25A, 10 Ω, 15V2.5V @ 15V, 50A310 ns----/134ns-ROHS3 CompliantSTripFET™Insulated Gate BIP Transistors3Single20V5.5VNo--------------------
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8 WeeksThrough HoleThrough HoleTO-220-3SILICON-55°C~150°C TJTubeActive1 (Unlimited)3EAR9980W---STGP10-1--Standard-POWER CONTROLN-CHANNEL600V29A-TO-220AB600V1160 ns480V, 10A, 1k Ω, 15V1.75V @ 15V, 10A3100 ns-33nC80A700ns/1.2μs600μJ (on), 5mJ (off)ROHS3 CompliantPowerMESH™Insulated Gate BIP Transistors3Single20V5VNoACTIVE (Last Updated: 8 months ago)36.000006ge3Matte Tin (Sn) - annealed600V10A80W7 μs600V10A1.7V10A9.15mm10.4mm4.6mmNo SVHCLead Free--
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8 WeeksThrough HoleThrough HoleTO-220-3SILICON-55°C~150°C TJTubeActive1 (Unlimited)3EAR99130W---STGP19-1--Standard-POWER CONTROLN-CHANNEL600V40A31nsTO-220AB600V32 ns390V, 12A, 10 Ω, 15V2.5V @ 15V, 12A272 ns-53nC60A25ns/97ns85μJ (on), 189μJ (off)ROHS3 CompliantPowerMESH™Insulated Gate BIP Transistors3Single20V5.75VNoACTIVE (Last Updated: 8 months ago)3-----130W25 ns--2.5V-15.75mm10.4mm4.6mmNo SVHCLead Free7ns97 ns
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