Vishay Siliconix SI7148DP-T1-E3
- Part Number:
- SI7148DP-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3070027-SI7148DP-T1-E3
- Description:
- MOSFET N-CH 75V 28A PPAK SO-8
- Datasheet:
- SI7148DP-T1-E3
Vishay Siliconix SI7148DP-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7148DP-T1-E3.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® SO-8
- Number of Pins8
- Weight506.605978mg
- Transistor Element MaterialSILICON
- Manufacturer Package IdentifierS17-0173-Single
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance11mOhm
- Additional FeatureAVALANCHE RATED
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormFLAT
- Pin Count8
- JESD-30 CodeR-PDSO-F5
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max5.4W Ta 96W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation5.4W
- Case ConnectionDRAIN
- Turn On Delay Time17 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs11m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2900pF @ 35V
- Current - Continuous Drain (Id) @ 25°C28A Tc
- Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
- Rise Time255ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)100 ns
- Turn-Off Delay Time39 ns
- Continuous Drain Current (ID)28A
- Threshold Voltage2V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage75V
- Pulsed Drain Current-Max (IDM)60A
- Dual Supply Voltage75V
- Max Junction Temperature (Tj)150°C
- Nominal Vgs2 V
- Turn Off Time-Max (toff)90ns
- Turn On Time-Max (ton)96ns
- Height1.17mm
- Length4.9mm
- Width5.89mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI7148DP-T1-E3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2900pF @ 35V.This device has a continuous drain current (ID) of [28A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=75V, the drain-source breakdown voltage is 75V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 39 ns.A maximum pulsed drain current of 60A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 2V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
SI7148DP-T1-E3 Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 39 ns
based on its rated peak drain current 60A.
a threshold voltage of 2V
SI7148DP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7148DP-T1-E3 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2900pF @ 35V.This device has a continuous drain current (ID) of [28A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=75V, the drain-source breakdown voltage is 75V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 39 ns.A maximum pulsed drain current of 60A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 2V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
SI7148DP-T1-E3 Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 39 ns
based on its rated peak drain current 60A.
a threshold voltage of 2V
SI7148DP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7148DP-T1-E3 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
SI7148DP-T1-E3 More Descriptions
Single N-Channel 75 V 0.011 Ohm Surface Mount Power Mosfet - PowerPAK-SO-8
N Channel Mosfet, 75V, 28A, Soic, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:28A; On Resistance Rds(On):0.011Ohm; Transistor Mounting:surface Mount; Threshold Voltage Vgs:2V Rohs Compliant: No
MOSFET, N,; Transistor Type:MOSFET; On State Resistance:0.011ohm; Transistor Case Style:PowerPAK; Case Style:PowerPAK; Cont Current Id:28A; Max Junction Temperature Tj:150°C; Max Voltage Vgs th:2.5V; Min Voltage Vgs th:1.5V; Power Dissipation Pd:96W; Rise Time:255ns; Termination Type:SMD; Transistor Polarity:N; Typ Voltage Vds:75V; Typ Voltage Vgs th:2V; Voltage Vgs Rds on Measurement:10V
N Channel Mosfet, 75V, 28A, Soic, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:28A; On Resistance Rds(On):0.011Ohm; Transistor Mounting:surface Mount; Threshold Voltage Vgs:2V Rohs Compliant: No
MOSFET, N,; Transistor Type:MOSFET; On State Resistance:0.011ohm; Transistor Case Style:PowerPAK; Case Style:PowerPAK; Cont Current Id:28A; Max Junction Temperature Tj:150°C; Max Voltage Vgs th:2.5V; Min Voltage Vgs th:1.5V; Power Dissipation Pd:96W; Rise Time:255ns; Termination Type:SMD; Transistor Polarity:N; Typ Voltage Vds:75V; Typ Voltage Vgs th:2V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to SI7148DP-T1-E3.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialManufacturer Package IdentifierOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceAdditional FeatureTechnologyTerminal PositionTerminal FormPin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageMax Junction Temperature (Tj)Nominal VgsTurn Off Time-Max (toff)Turn On Time-Max (ton)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxTerminal FinishSubcategoryPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)View Compare
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SI7148DP-T1-E314 WeeksTinSurface MountSurface MountPowerPAK® SO-88506.605978mgSILICONS17-0173-Single-55°C~150°C TJTape & Reel (TR)TrenchFET®2007e3yesActive1 (Unlimited)5SMD/SMTEAR9911mOhmAVALANCHE RATEDMOSFET (Metal Oxide)DUALFLAT8R-PDSO-F5115.4W Ta 96W TcSingleENHANCEMENT MODE5.4WDRAIN17 nsN-ChannelSWITCHING11m Ω @ 15A, 10V2.5V @ 250μA2900pF @ 35V28A Tc100nC @ 10V255ns4.5V 10V±20V100 ns39 ns28A2V20V75V60A75V150°C2 V90ns96ns1.17mm4.9mm5.89mmUnknownNoROHS3 CompliantLead Free------------
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--Surface MountSurface MountPowerPAK® SO-8-506.605978mg---55°C~150°C TJTape & Reel (TR)TrenchFET®2013--Obsolete1 (Unlimited)---3.5mOhm-MOSFET (Metal Oxide)-----15.4W Ta 83W TcSingle----N-Channel-3.5mOhm @ 20A, 10V3V @ 250μA6900pF @ 20V50A Tc155nC @ 10V-4.5V 10V±20V--50A-20V------------ROHS3 Compliant-PowerPAK® SO-8150°C-55°C40V6.9nF3.5mOhm3.5 mΩ----
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14 Weeks-Surface MountSurface MountPowerPAK® 1212-88-SILICON--50°C~150°C TJTape & Reel (TR)TrenchFET®2015e3yesActive1 (Unlimited)5-EAR99134MOhm-MOSFET (Metal Oxide)DUALFLAT8S-PDSO-F5113.7W Ta 52W TcSingleENHANCEMENT MODE3.7WDRAIN30 nsP-ChannelSWITCHING134m Ω @ 4A, 10V3V @ 250μA1480pF @ 50V13.2A Tc55nC @ 10V110ns4.5V 10V±20V40 ns51 ns-13.2A-20V-100V20A-----1.04mm3.05mm3.05mm-NoROHS3 CompliantLead Free---100V---Matte Tin (Sn)---
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14 WeeksTinSurface MountSurface MountPowerPAK® SO-88506.605978mgSILICON--55°C~150°C TJTape & Reel (TR)TrenchFET®2008e3yesActive1 (Unlimited)5-EAR9914mOhm-MOSFET (Metal Oxide)DUALC BEND8R-XDSO-C5116.25W Ta 104W TcSingleENHANCEMENT MODE6.25WDRAIN21 nsN-ChannelSWITCHING14m Ω @ 10A, 10V4.5V @ 250μA2870pF @ 50V60A Tc72nC @ 10V10ns10V±20V11 ns27 ns60A4.5V20V100V---4.5 V--1.04mm4.9mm5.89mmUnknownNoROHS3 CompliantLead Free--------FET General Purpose Power26040
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