SI7148DP-T1-E3

Vishay Siliconix SI7148DP-T1-E3

Part Number:
SI7148DP-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
3070027-SI7148DP-T1-E3
Description:
MOSFET N-CH 75V 28A PPAK SO-8
ECAD Model:
Datasheet:
SI7148DP-T1-E3

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  • SI7148DP-T1-E3 Detail Images
Specifications
Vishay Siliconix SI7148DP-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7148DP-T1-E3.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® SO-8
  • Number of Pins
    8
  • Weight
    506.605978mg
  • Transistor Element Material
    SILICON
  • Manufacturer Package Identifier
    S17-0173-Single
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2007
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    11mOhm
  • Additional Feature
    AVALANCHE RATED
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Pin Count
    8
  • JESD-30 Code
    R-PDSO-F5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    5.4W Ta 96W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    5.4W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    17 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    11m Ω @ 15A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2900pF @ 35V
  • Current - Continuous Drain (Id) @ 25°C
    28A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    100nC @ 10V
  • Rise Time
    255ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    100 ns
  • Turn-Off Delay Time
    39 ns
  • Continuous Drain Current (ID)
    28A
  • Threshold Voltage
    2V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    75V
  • Pulsed Drain Current-Max (IDM)
    60A
  • Dual Supply Voltage
    75V
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    2 V
  • Turn Off Time-Max (toff)
    90ns
  • Turn On Time-Max (ton)
    96ns
  • Height
    1.17mm
  • Length
    4.9mm
  • Width
    5.89mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI7148DP-T1-E3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2900pF @ 35V.This device has a continuous drain current (ID) of [28A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=75V, the drain-source breakdown voltage is 75V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 39 ns.A maximum pulsed drain current of 60A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 2V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

SI7148DP-T1-E3 Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 39 ns
based on its rated peak drain current 60A.
a threshold voltage of 2V


SI7148DP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7148DP-T1-E3 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
SI7148DP-T1-E3 More Descriptions
Single N-Channel 75 V 0.011 Ohm Surface Mount Power Mosfet - PowerPAK-SO-8
N Channel Mosfet, 75V, 28A, Soic, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:28A; On Resistance Rds(On):0.011Ohm; Transistor Mounting:surface Mount; Threshold Voltage Vgs:2V Rohs Compliant: No
MOSFET, N,; Transistor Type:MOSFET; On State Resistance:0.011ohm; Transistor Case Style:PowerPAK; Case Style:PowerPAK; Cont Current Id:28A; Max Junction Temperature Tj:150°C; Max Voltage Vgs th:2.5V; Min Voltage Vgs th:1.5V; Power Dissipation Pd:96W; Rise Time:255ns; Termination Type:SMD; Transistor Polarity:N; Typ Voltage Vds:75V; Typ Voltage Vgs th:2V; Voltage Vgs Rds on Measurement:10V
SI7148DP-T1-E3 Detail Images
Product Comparison
The three parts on the right have similar specifications to SI7148DP-T1-E3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Manufacturer Package Identifier
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Additional Feature
    Technology
    Terminal Position
    Terminal Form
    Pin Count
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Max Junction Temperature (Tj)
    Nominal Vgs
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Terminal Finish
    Subcategory
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    View Compare
  • SI7148DP-T1-E3
    SI7148DP-T1-E3
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    506.605978mg
    SILICON
    S17-0173-Single
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2007
    e3
    yes
    Active
    1 (Unlimited)
    5
    SMD/SMT
    EAR99
    11mOhm
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    8
    R-PDSO-F5
    1
    1
    5.4W Ta 96W Tc
    Single
    ENHANCEMENT MODE
    5.4W
    DRAIN
    17 ns
    N-Channel
    SWITCHING
    11m Ω @ 15A, 10V
    2.5V @ 250μA
    2900pF @ 35V
    28A Tc
    100nC @ 10V
    255ns
    4.5V 10V
    ±20V
    100 ns
    39 ns
    28A
    2V
    20V
    75V
    60A
    75V
    150°C
    2 V
    90ns
    96ns
    1.17mm
    4.9mm
    5.89mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI7156DP-T1-GE3
    -
    -
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    -
    506.605978mg
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    3.5mOhm
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    5.4W Ta 83W Tc
    Single
    -
    -
    -
    -
    N-Channel
    -
    3.5mOhm @ 20A, 10V
    3V @ 250μA
    6900pF @ 20V
    50A Tc
    155nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    50A
    -
    20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    PowerPAK® SO-8
    150°C
    -55°C
    40V
    6.9nF
    3.5mOhm
    3.5 mΩ
    -
    -
    -
    -
  • SI7113DN-T1-E3
    14 Weeks
    -
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8
    8
    -
    SILICON
    -
    -50°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2015
    e3
    yes
    Active
    1 (Unlimited)
    5
    -
    EAR99
    134MOhm
    -
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    8
    S-PDSO-F5
    1
    1
    3.7W Ta 52W Tc
    Single
    ENHANCEMENT MODE
    3.7W
    DRAIN
    30 ns
    P-Channel
    SWITCHING
    134m Ω @ 4A, 10V
    3V @ 250μA
    1480pF @ 50V
    13.2A Tc
    55nC @ 10V
    110ns
    4.5V 10V
    ±20V
    40 ns
    51 ns
    -13.2A
    -
    20V
    -100V
    20A
    -
    -
    -
    -
    -
    1.04mm
    3.05mm
    3.05mm
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    100V
    -
    -
    -
    Matte Tin (Sn)
    -
    -
    -
  • SI7178DP-T1-GE3
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    506.605978mg
    SILICON
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2008
    e3
    yes
    Active
    1 (Unlimited)
    5
    -
    EAR99
    14mOhm
    -
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    8
    R-XDSO-C5
    1
    1
    6.25W Ta 104W Tc
    Single
    ENHANCEMENT MODE
    6.25W
    DRAIN
    21 ns
    N-Channel
    SWITCHING
    14m Ω @ 10A, 10V
    4.5V @ 250μA
    2870pF @ 50V
    60A Tc
    72nC @ 10V
    10ns
    10V
    ±20V
    11 ns
    27 ns
    60A
    4.5V
    20V
    100V
    -
    -
    -
    4.5 V
    -
    -
    1.04mm
    4.9mm
    5.89mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    FET General Purpose Power
    260
    40
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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