SI7178DP-T1-GE3

Vishay Siliconix SI7178DP-T1-GE3

Part Number:
SI7178DP-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
3070093-SI7178DP-T1-GE3
Description:
MOSFET N-CH 100V 60A PPAK SO-8
ECAD Model:
Datasheet:
SI7178DP-T1-GE3

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Vishay Siliconix SI7178DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7178DP-T1-GE3.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® SO-8
  • Number of Pins
    8
  • Weight
    506.605978mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Resistance
    14mOhm
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    8
  • JESD-30 Code
    R-XDSO-C5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    6.25W Ta 104W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    6.25W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    21 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    14m Ω @ 10A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2870pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    60A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    72nC @ 10V
  • Rise Time
    10ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    11 ns
  • Turn-Off Delay Time
    27 ns
  • Continuous Drain Current (ID)
    60A
  • Threshold Voltage
    4.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Nominal Vgs
    4.5 V
  • Height
    1.04mm
  • Length
    4.9mm
  • Width
    5.89mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI7178DP-T1-GE3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2870pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 60A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 27 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 21 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4.5V, which means that it will not activate any of its functions when its threshold voltage reaches 4.5V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

SI7178DP-T1-GE3 Features
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 27 ns
a threshold voltage of 4.5V


SI7178DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7178DP-T1-GE3 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
SI7178DP-T1-GE3 More Descriptions
Single N-Channel 100 V 0.014 Ohms Surface Mount Power Mosfet - PowerPAK SO-8
N-CHANNEL 100-V (D-S) MOSFET | Siliconix / Vishay SI7178DP-T1-GE3
Trans MOSFET N-CH 100V 14.9A 8-Pin PowerPAK SO T/R
N-Channel 100-V (D-S) Mosfet Rohs Compliant: Yes
Power Field-Effect Transistor, 14.9A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 100V 60A 104W 14mohm @ 10V
N CHANNEL MOSFET, 100V, 60A, PowerPAK; T; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:6.25W; Operating Temperature Range:-55°C to 150°C; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:60A; Junction Temperature Tj Max:150°C; Package / Case:PowerPAK; Power Dissipation Pd:104W; Power Dissipation Pd:6.25W; Rise Time:10ns; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Voltage Vgs th Min:2.5V
Product Comparison
The three parts on the right have similar specifications to SI7178DP-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Configuration
    Drain to Source Voltage (Vdss)
    View Compare
  • SI7178DP-T1-GE3
    SI7178DP-T1-GE3
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2008
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    14mOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    R-XDSO-C5
    1
    1
    6.25W Ta 104W Tc
    Single
    ENHANCEMENT MODE
    6.25W
    DRAIN
    21 ns
    N-Channel
    SWITCHING
    14m Ω @ 10A, 10V
    4.5V @ 250μA
    2870pF @ 50V
    60A Tc
    72nC @ 10V
    10ns
    10V
    ±20V
    11 ns
    27 ns
    60A
    4.5V
    20V
    100V
    4.5 V
    1.04mm
    4.9mm
    5.89mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI7120DN-T1-GE3
    -
    -
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8
    8
    -
    -
    -
    Cut Tape (CT)
    TrenchFET®
    2014
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    -
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    30
    8
    S-XDSO-C5
    1
    -
    -
    Single
    ENHANCEMENT MODE
    1.5W
    DRAIN
    14 ns
    N-Channel
    SWITCHING
    19m Ω @ 10A, 10V
    3.5V @ 250μA
    -
    6.3A Ta
    45nC @ 10V
    12ns
    -
    -
    12 ns
    50 ns
    10A
    2.5V
    20V
    60V
    -
    -
    -
    -
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    PURE MATTE TIN
    150°C
    -55°C
    1.5W
    6.3A
    40A
    24 mJ
    -
    -
  • SI7123DN-T1-GE3
    12 Weeks
    Tin
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    10.6mOhm
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    S-XDSO-C5
    1
    1
    1.5W Ta
    -
    ENHANCEMENT MODE
    1.5W
    DRAIN
    25 ns
    P-Channel
    SWITCHING
    10.6m Ω @ 15A, 4.5V
    1V @ 250μA
    3729pF @ 10V
    10.2A Ta
    90nC @ 4.5V
    88ns
    1.8V 4.5V
    ±8V
    88 ns
    82 ns
    -25A
    -1V
    8V
    -20V
    -
    1.04mm
    3.3mm
    3.3mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    40A
    -
    SINGLE WITH BUILT-IN DIODE
    20V
  • SI7160DP-T1-E3
    -
    -
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2012
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    8.7MOhm
    -
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    30
    8
    R-PDSO-C5
    1
    -
    5W Ta 27.7W Tc
    -
    ENHANCEMENT MODE
    5W
    DRAIN
    29 ns
    N-Channel
    SWITCHING
    8.7m Ω @ 15A, 10V
    2.5V @ 250μA
    2970pF @ 15V
    20A Tc
    66nC @ 10V
    115ns
    4.5V 10V
    ±16V
    21 ns
    43 ns
    17.8A
    -
    16V
    30V
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    Matte Tin (Sn)
    -
    -
    -
    -
    60A
    20 mJ
    SINGLE WITH BUILT-IN DIODE
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • 08 March 2024

    A Complete Guide to the TP4056 Battery Charger Module

    Ⅰ. What is TP4056?Ⅱ. Block diagram of TP4056Ⅲ. Main parameters of TP4056Ⅳ. Pins and functions of TP4056Ⅴ. TP4056 charging circuit diagram explanationⅥ. Battery charging process of TP4056Ⅶ. Application...
  • 08 March 2024

    In-depth Analysis of SS34 Schottky Diode

    Ⅰ. Overview of SS34Ⅱ. Purpose of SS34 diodeⅢ. Technical parameters of SS34 diodeⅣ. Advantages of SS34 diodesⅤ. Working principle of SS34 diodeⅥ. Typical characteristics of SS34 diodesⅦ. Case...
  • 11 March 2024

    BTS50085-1TMA Specifications, Functions, Purpose and More

    Ⅰ. What is BTS50085-1TMA?Ⅱ. Specifications of BTS50085-1TMAⅢ. What are the functions of BTS50085-1TMA?Ⅳ. Inverse load current operation of BTS50085-1TMAⅤ. Externally adjustable current limit of BTS50085-1TMAⅥ. How to use...
  • 11 March 2024

    LM317: Ideal for Adjustable, High-Efficiency Three-Terminal Regulators

    Ⅰ. Introduction to LM317Ⅱ. The function of LM317 adjustable voltage stabilized power supply voltage stabilizing circuitⅢ. Soft-start circuit of LM317Ⅳ. Minimum stable operating current of LM317Ⅴ. Calculation of...
  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.