Vishay Siliconix SI7178DP-T1-GE3
- Part Number:
- SI7178DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3070093-SI7178DP-T1-GE3
- Description:
- MOSFET N-CH 100V 60A PPAK SO-8
- Datasheet:
- SI7178DP-T1-GE3
Vishay Siliconix SI7178DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7178DP-T1-GE3.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® SO-8
- Number of Pins8
- Weight506.605978mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Resistance14mOhm
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- JESD-30 CodeR-XDSO-C5
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max6.25W Ta 104W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation6.25W
- Case ConnectionDRAIN
- Turn On Delay Time21 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs14m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2870pF @ 50V
- Current - Continuous Drain (Id) @ 25°C60A Tc
- Gate Charge (Qg) (Max) @ Vgs72nC @ 10V
- Rise Time10ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)11 ns
- Turn-Off Delay Time27 ns
- Continuous Drain Current (ID)60A
- Threshold Voltage4.5V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Nominal Vgs4.5 V
- Height1.04mm
- Length4.9mm
- Width5.89mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI7178DP-T1-GE3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2870pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 60A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 27 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 21 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4.5V, which means that it will not activate any of its functions when its threshold voltage reaches 4.5V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
SI7178DP-T1-GE3 Features
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 27 ns
a threshold voltage of 4.5V
SI7178DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7178DP-T1-GE3 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2870pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 60A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 27 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 21 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4.5V, which means that it will not activate any of its functions when its threshold voltage reaches 4.5V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
SI7178DP-T1-GE3 Features
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 27 ns
a threshold voltage of 4.5V
SI7178DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7178DP-T1-GE3 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
SI7178DP-T1-GE3 More Descriptions
Single N-Channel 100 V 0.014 Ohms Surface Mount Power Mosfet - PowerPAK SO-8
N-CHANNEL 100-V (D-S) MOSFET | Siliconix / Vishay SI7178DP-T1-GE3
Trans MOSFET N-CH 100V 14.9A 8-Pin PowerPAK SO T/R
N-Channel 100-V (D-S) Mosfet Rohs Compliant: Yes
Power Field-Effect Transistor, 14.9A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 100V 60A 104W 14mohm @ 10V
N CHANNEL MOSFET, 100V, 60A, PowerPAK; T; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:6.25W; Operating Temperature Range:-55°C to 150°C; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:60A; Junction Temperature Tj Max:150°C; Package / Case:PowerPAK; Power Dissipation Pd:104W; Power Dissipation Pd:6.25W; Rise Time:10ns; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Voltage Vgs th Min:2.5V
N-CHANNEL 100-V (D-S) MOSFET | Siliconix / Vishay SI7178DP-T1-GE3
Trans MOSFET N-CH 100V 14.9A 8-Pin PowerPAK SO T/R
N-Channel 100-V (D-S) Mosfet Rohs Compliant: Yes
Power Field-Effect Transistor, 14.9A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 100V 60A 104W 14mohm @ 10V
N CHANNEL MOSFET, 100V, 60A, PowerPAK; T; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:6.25W; Operating Temperature Range:-55°C to 150°C; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:60A; Junction Temperature Tj Max:150°C; Package / Case:PowerPAK; Power Dissipation Pd:104W; Power Dissipation Pd:6.25W; Rise Time:10ns; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Voltage Vgs th Min:2.5V
The three parts on the right have similar specifications to SI7178DP-T1-GE3.
-
ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishMax Operating TemperatureMin Operating TemperatureMax Power DissipationDrain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)ConfigurationDrain to Source Voltage (Vdss)View Compare
-
SI7178DP-T1-GE314 WeeksTinSurface MountSurface MountPowerPAK® SO-88506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2008e3yesActive1 (Unlimited)5EAR9914mOhmFET General Purpose PowerMOSFET (Metal Oxide)DUALC BEND260408R-XDSO-C5116.25W Ta 104W TcSingleENHANCEMENT MODE6.25WDRAIN21 nsN-ChannelSWITCHING14m Ω @ 10A, 10V4.5V @ 250μA2870pF @ 50V60A Tc72nC @ 10V10ns10V±20V11 ns27 ns60A4.5V20V100V4.5 V1.04mm4.9mm5.89mmUnknownNoROHS3 CompliantLead Free----------
-
--Surface MountSurface MountPowerPAK® 1212-88---Cut Tape (CT)TrenchFET®2014e3yesObsolete1 (Unlimited)5EAR99-FET General Purpose PowersMOSFET (Metal Oxide)DUALC BEND260308S-XDSO-C51--SingleENHANCEMENT MODE1.5WDRAIN14 nsN-ChannelSWITCHING19m Ω @ 10A, 10V3.5V @ 250μA-6.3A Ta45nC @ 10V12ns--12 ns50 ns10A2.5V20V60V----No SVHCNoROHS3 CompliantLead FreePURE MATTE TIN150°C-55°C1.5W6.3A40A24 mJ--
-
12 WeeksTinSurface MountSurface MountPowerPAK® 1212-88-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3yesObsolete1 (Unlimited)5EAR9910.6mOhmOther TransistorsMOSFET (Metal Oxide)DUALC BEND260408S-XDSO-C5111.5W Ta-ENHANCEMENT MODE1.5WDRAIN25 nsP-ChannelSWITCHING10.6m Ω @ 15A, 4.5V1V @ 250μA3729pF @ 10V10.2A Ta90nC @ 4.5V88ns1.8V 4.5V±8V88 ns82 ns-25A-1V8V-20V-1.04mm3.3mm3.3mmUnknownNoROHS3 CompliantLead Free-----40A-SINGLE WITH BUILT-IN DIODE20V
-
--Surface MountSurface MountPowerPAK® SO-88-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2012e3yesObsolete1 (Unlimited)5EAR998.7MOhm-MOSFET (Metal Oxide)DUALC BEND260308R-PDSO-C51-5W Ta 27.7W Tc-ENHANCEMENT MODE5WDRAIN29 nsN-ChannelSWITCHING8.7m Ω @ 15A, 10V2.5V @ 250μA2970pF @ 15V20A Tc66nC @ 10V115ns4.5V 10V±16V21 ns43 ns17.8A-16V30V-----NoROHS3 CompliantLead FreeMatte Tin (Sn)----60A20 mJSINGLE WITH BUILT-IN DIODE-
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
08 March 2024
A Complete Guide to the TP4056 Battery Charger Module
Ⅰ. What is TP4056?Ⅱ. Block diagram of TP4056Ⅲ. Main parameters of TP4056Ⅳ. Pins and functions of TP4056Ⅴ. TP4056 charging circuit diagram explanationⅥ. Battery charging process of TP4056Ⅶ. Application... -
08 March 2024
In-depth Analysis of SS34 Schottky Diode
Ⅰ. Overview of SS34Ⅱ. Purpose of SS34 diodeⅢ. Technical parameters of SS34 diodeⅣ. Advantages of SS34 diodesⅤ. Working principle of SS34 diodeⅥ. Typical characteristics of SS34 diodesⅦ. Case... -
11 March 2024
BTS50085-1TMA Specifications, Functions, Purpose and More
Ⅰ. What is BTS50085-1TMA?Ⅱ. Specifications of BTS50085-1TMAⅢ. What are the functions of BTS50085-1TMA?Ⅳ. Inverse load current operation of BTS50085-1TMAⅤ. Externally adjustable current limit of BTS50085-1TMAⅥ. How to use... -
11 March 2024
LM317: Ideal for Adjustable, High-Efficiency Three-Terminal Regulators
Ⅰ. Introduction to LM317Ⅱ. The function of LM317 adjustable voltage stabilized power supply voltage stabilizing circuitⅢ. Soft-start circuit of LM317Ⅳ. Minimum stable operating current of LM317Ⅴ. Calculation of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.