Vishay Siliconix SI7159DP-T1-GE3
- Part Number:
- SI7159DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2854895-SI7159DP-T1-GE3
- Description:
- MOSFET P-CH 30V 30A PPAK SO-8
- Datasheet:
- SI7159DP-T1-GE3
Vishay Siliconix SI7159DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7159DP-T1-GE3.
- Factory Lead Time21 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® SO-8
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- JESD-30 CodeR-XDSO-C5
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max5.4W Ta 83W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation5W
- Case ConnectionDRAIN
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds5170pF @ 15V
- Current - Continuous Drain (Id) @ 25°C30A Tc
- Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
- Rise Time14ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±25V
- Fall Time (Typ)11 ns
- Turn-Off Delay Time40 ns
- Continuous Drain Current (ID)29A
- Gate to Source Voltage (Vgs)16V
- Drain Current-Max (Abs) (ID)20.7A
- Drain-source On Resistance-Max0.007Ohm
- Drain to Source Breakdown Voltage-25V
- Pulsed Drain Current-Max (IDM)60A
- Avalanche Energy Rating (Eas)20 mJ
- RoHS StatusROHS3 Compliant
SI7159DP-T1-GE3 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 20 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5170pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -25V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -25V.There is no drain current on this device since the maximum continuous current it can conduct is 20.7A.As a result of its turn-off delay time, which is 40 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 60A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 16VV.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SI7159DP-T1-GE3 Features
the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 29A
a drain-to-source breakdown voltage of -25V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 60A.
a 30V drain to source voltage (Vdss)
SI7159DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7159DP-T1-GE3 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 20 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5170pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -25V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -25V.There is no drain current on this device since the maximum continuous current it can conduct is 20.7A.As a result of its turn-off delay time, which is 40 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 60A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 16VV.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SI7159DP-T1-GE3 Features
the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 29A
a drain-to-source breakdown voltage of -25V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 60A.
a 30V drain to source voltage (Vdss)
SI7159DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7159DP-T1-GE3 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
SI7159DP-T1-GE3 More Descriptions
MOSFET 30V 30A 83W 7.0mohm @ 10V
MOSFET P-CH 30V 30A PPAK SO-8
P-CHANNEL 30-V (D-S) MOSFET
OEMs, CMs ONLY (NO BROKERS)
MOSFET P-CH 30V 30A PPAK SO-8
P-CHANNEL 30-V (D-S) MOSFET
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to SI7159DP-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusMax Operating TemperatureMin Operating TemperatureMax Power DissipationElement ConfigurationTurn On Delay TimeThreshold VoltageREACH SVHCRadiation HardeningLead FreeContact PlatingWeightManufacturer Package IdentifierTerminationResistanceAdditional FeatureNumber of ChannelsDual Supply VoltageMax Junction Temperature (Tj)Nominal VgsTurn Off Time-Max (toff)Turn On Time-Max (ton)HeightLengthWidthView Compare
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SI7159DP-T1-GE321 WeeksSurface MountSurface MountPowerPAK® SO-88SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3yesActive1 (Unlimited)5EAR99Matte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALC BEND260unknown408R-XDSO-C5Not Qualified1SINGLE WITH BUILT-IN DIODE5.4W Ta 83W TcENHANCEMENT MODE5WDRAINP-ChannelSWITCHING7m Ω @ 15A, 10V2.5V @ 250μA5170pF @ 15V30A Tc180nC @ 10V14ns30V4.5V 10V±25V11 ns40 ns29A16V20.7A0.007Ohm-25V60A20 mJROHS3 Compliant-------------------------
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-Surface MountSurface MountPowerPAK® 1212-88--Cut Tape (CT)TrenchFET®2014e3yesObsolete1 (Unlimited)5EAR99PURE MATTE TINFET General Purpose PowersMOSFET (Metal Oxide)DUALC BEND260-308S-XDSO-C5-1--ENHANCEMENT MODE1.5WDRAINN-ChannelSWITCHING19m Ω @ 10A, 10V3.5V @ 250μA-6.3A Ta45nC @ 10V12ns---12 ns50 ns10A20V6.3A-60V40A24 mJROHS3 Compliant150°C-55°C1.5WSingle14 ns2.5VNo SVHCNoLead Free---------------
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14 WeeksSurface MountSurface MountPowerPAK® SO-88SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2007e3yesActive1 (Unlimited)5EAR99--MOSFET (Metal Oxide)DUALFLAT---8R-PDSO-F5-1-5.4W Ta 96W TcENHANCEMENT MODE5.4WDRAINN-ChannelSWITCHING11m Ω @ 15A, 10V2.5V @ 250μA2900pF @ 35V28A Tc100nC @ 10V255ns-4.5V 10V±20V100 ns39 ns28A20V--75V60A-ROHS3 Compliant---Single17 ns2VUnknownNoLead FreeTin506.605978mgS17-0173-SingleSMD/SMT11mOhmAVALANCHE RATED175V150°C2 V90ns96ns1.17mm4.9mm5.89mm
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-Surface MountSurface MountPowerPAK® SO-88SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2012e3yesObsolete1 (Unlimited)5EAR99Matte Tin (Sn)-MOSFET (Metal Oxide)DUALC BEND260-308R-PDSO-C5-1SINGLE WITH BUILT-IN DIODE5W Ta 27.7W TcENHANCEMENT MODE5WDRAINN-ChannelSWITCHING8.7m Ω @ 15A, 10V2.5V @ 250μA2970pF @ 15V20A Tc66nC @ 10V115ns-4.5V 10V±16V21 ns43 ns17.8A16V--30V60A20 mJROHS3 Compliant----29 ns--NoLead Free----8.7MOhm----------
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