Vishay Siliconix SI7156DP-T1-GE3

Name: SI7156DP-T1-GE3
Brand: Vishay Siliconix
SKU: 3071323-SI7156DP-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI7156DP-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 3071323-SI7156DP-T1-GE3

Description:: MOSFET N-CH 40V 50A PPAK SO-8

ECAD Model:

Datasheet:: SI7156DP-T1-GE3

Specifications

Vishay Siliconix SI7156DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7156DP-T1-GE3.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8
Weight
506.605978mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2013
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
3.5mOhm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Channels
1
Power Dissipation-Max
5.4W Ta 83W Tc
Element Configuration
Single
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
3.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6900pF @ 20V
Current - Continuous Drain (Id) @ 25°C
50A Tc
Gate Charge (Qg) (Max) @ Vgs
155nC @ 10V
Drain to Source Voltage (Vdss)
40V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
50A
Gate to Source Voltage (Vgs)
20V
Input Capacitance
6.9nF
Drain to Source Resistance
3.5mOhm
Rds On Max
3.5 mΩ
RoHS Status
ROHS3 Compliant

Description

SI7156DP-T1-GE3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6900pF @ 20V.This device has a continuous drain current (ID) of [50A], which is its maximum continuous current.MOSFETs have 3.5mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 40V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

SI7156DP-T1-GE3 Features
a continuous drain current (ID) of 50A
single MOSFETs transistor is 3.5mOhm
a 40V drain to source voltage (Vdss)

SI7156DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7156DP-T1-GE3 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

SI7156DP-T1-GE3 More Descriptions

MOSFET N-CH 40V 50A PPAK SO-8
MOSFET 40V 50A 83W 3.5mohm @ 10V
N-CHANNEL 40-V (D-S) MOSFET
OEMs, CMs ONLY (NO BROKERS)

Product Comparison

The three parts on the right have similar specifications to SI7156DP-T1-GE3.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Supplier Device Package

Weight

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Technology

Number of Channels

Power Dissipation-Max

Element Configuration

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Input Capacitance

Drain to Source Resistance

Rds On Max

RoHS Status

Number of Pins

Transistor Element Material

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

Transistor Application

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Radiation Hardening

Factory Lead Time

Contact Plating

Manufacturer Package Identifier

Pbfree Code

Termination

Pin Count

Threshold Voltage

Dual Supply Voltage

Max Junction Temperature (Tj)

Nominal Vgs

Turn Off Time-Max (toff)

Turn On Time-Max (ton)

Height

Length

Width

REACH SVHC

Lead Free

View Compare
SI7156DP-T1-GE3

Vishay Siliconix

Surface Mount

Surface Mount

PowerPAK® SO-8

PowerPAK® SO-8

506.605978mg

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

Obsolete

1 (Unlimited)

3.5mOhm

150°C

-55°C

MOSFET (Metal Oxide)

1

5.4W Ta 83W Tc

Single

N-Channel

3.5mOhm @ 20A, 10V

3V @ 250μA

6900pF @ 20V

50A Tc

155nC @ 10V

40V

4.5V 10V

±20V

50A

20V

6.9nF

3.5mOhm

3.5 mΩ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SI7160DP-T1-GE3

Vishay Siliconix

Surface Mount

Surface Mount

PowerPAK® SO-8

-

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

5W Ta 27.7W Tc

-

N-Channel

8.7m Ω @ 15A, 10V

2.5V @ 250μA

2970pF @ 15V

20A Tc

66nC @ 10V

-

4.5V 10V

±16V

20A

16V

-

-

-

ROHS3 Compliant

8

SILICON

e3

5

EAR99

Matte Tin (Sn)

ULTRA LOW RESISTANCE

DUAL

C BEND

260

30

R-PDSO-C5

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

5W

DRAIN

29 ns

SWITCHING

115ns

21 ns

43 ns

30V

60A

20 mJ

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SI7156DP-T1-GE3 vs SI7160DP-T1-GE3
SI7148DP-T1-E3

Vishay Siliconix

Surface Mount

Surface Mount

PowerPAK® SO-8

-

506.605978mg

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2007

Active

1 (Unlimited)

11mOhm

-

-

MOSFET (Metal Oxide)

1

5.4W Ta 96W Tc

Single

N-Channel

11m Ω @ 15A, 10V

2.5V @ 250μA

2900pF @ 35V

28A Tc

100nC @ 10V

-

4.5V 10V

±20V

28A

20V

-

-

-

ROHS3 Compliant

8

SILICON

e3

5

EAR99

-

AVALANCHE RATED

DUAL

FLAT

-

-

R-PDSO-F5

1

-

ENHANCEMENT MODE

5.4W

DRAIN

17 ns

SWITCHING

255ns

100 ns

39 ns

75V

60A

-

No

14 Weeks

Tin

S17-0173-Single

yes

SMD/SMT

8

2V

75V

150°C

2 V

90ns

96ns

1.17mm

4.9mm

5.89mm

Unknown

Lead Free

SI7156DP-T1-GE3 vs SI7148DP-T1-E3
SI7160DP-T1-E3

Vishay Siliconix

Surface Mount

Surface Mount

PowerPAK® SO-8

-

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2012

Obsolete

1 (Unlimited)

8.7MOhm

-

-

MOSFET (Metal Oxide)

-

5W Ta 27.7W Tc

-

N-Channel

8.7m Ω @ 15A, 10V

2.5V @ 250μA

2970pF @ 15V

20A Tc

66nC @ 10V

-

4.5V 10V

±16V

17.8A

16V

-

-

-

ROHS3 Compliant

8

SILICON

e3

5

EAR99

Matte Tin (Sn)

-

DUAL

C BEND

260

30

R-PDSO-C5

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

5W

DRAIN

29 ns

SWITCHING

115ns

21 ns

43 ns

30V

60A

20 mJ

No

-

-

-

yes

-

8

-

-

-

-

-

-

-

-

-

-

Lead Free

SI7156DP-T1-GE3 vs SI7160DP-T1-E3