Vishay Siliconix SI7123DN-T1-GE3
- Part Number:
- SI7123DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3070052-SI7123DN-T1-GE3
- Description:
- MOSFET P-CH 20V 10.2A 1212-8
- Datasheet:
- SI7123DN-T1-GE3
Vishay Siliconix SI7123DN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7123DN-T1-GE3.
- Factory Lead Time12 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® 1212-8
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Resistance10.6mOhm
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- JESD-30 CodeS-XDSO-C5
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max1.5W Ta
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.5W
- Case ConnectionDRAIN
- Turn On Delay Time25 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs10.6m Ω @ 15A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3729pF @ 10V
- Current - Continuous Drain (Id) @ 25°C10.2A Ta
- Gate Charge (Qg) (Max) @ Vgs90nC @ 4.5V
- Rise Time88ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)88 ns
- Turn-Off Delay Time82 ns
- Continuous Drain Current (ID)-25A
- Threshold Voltage-1V
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage-20V
- Pulsed Drain Current-Max (IDM)40A
- Height1.04mm
- Length3.3mm
- Width3.3mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI7123DN-T1-GE3 Overview
A device's maximum input capacitance is 3729pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is -25A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-20V, and this device has a drain-to-source breakdown voltage of -20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 82 ns.Its maximum pulsed drain current is 40A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -1V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (1.8V 4.5V) to reduce its overall power consumption.
SI7123DN-T1-GE3 Features
a continuous drain current (ID) of -25A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 82 ns
based on its rated peak drain current 40A.
a threshold voltage of -1V
a 20V drain to source voltage (Vdss)
SI7123DN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7123DN-T1-GE3 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 3729pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is -25A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-20V, and this device has a drain-to-source breakdown voltage of -20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 82 ns.Its maximum pulsed drain current is 40A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -1V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (1.8V 4.5V) to reduce its overall power consumption.
SI7123DN-T1-GE3 Features
a continuous drain current (ID) of -25A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 82 ns
based on its rated peak drain current 40A.
a threshold voltage of -1V
a 20V drain to source voltage (Vdss)
SI7123DN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7123DN-T1-GE3 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
SI7123DN-T1-GE3 More Descriptions
Si7123DN Series P-Channel 20 V 0.0106 Ohm SMT Power Mosfet - PowerPAK-1212-8
Trans MOSFET P-CH 20V 16A 8-Pin PowerPAK 1212 T/R
20V 10.2A 1.5W 10.6m´Î@4.5V15A 1V@250Ã×A P Channel PowerPAK 1212-8 MOSFETs ROHS
P-Channel 20-V (D-S) Mosfet Rohs Compliant: Yes
20V 25A 52W 10.6mohm @ 4.5V | Siliconix / Vishay SI7123DN-T1-GE3
P CH MOSFET, -20V, 25A, POWERPAK
MOSFET P-CH 20V 10.2A PPAK1212-8
French Electronic Distributor since 1988
Trans MOSFET P-CH 20V 16A 8-Pin PowerPAK 1212 T/R
20V 10.2A 1.5W 10.6m´Î@4.5V15A 1V@250Ã×A P Channel PowerPAK 1212-8 MOSFETs ROHS
P-Channel 20-V (D-S) Mosfet Rohs Compliant: Yes
20V 25A 52W 10.6mohm @ 4.5V | Siliconix / Vishay SI7123DN-T1-GE3
P CH MOSFET, -20V, 25A, POWERPAK
MOSFET P-CH 20V 10.2A PPAK1212-8
French Electronic Distributor since 1988
The three parts on the right have similar specifications to SI7123DN-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageWeightMax Operating TemperatureMin Operating TemperatureElement ConfigurationInput CapacitanceDrain to Source ResistanceRds On MaxTerminal FinishMax Power DissipationDrain Current-Max (Abs) (ID)Avalanche Energy Rating (Eas)Manufacturer Package IdentifierTerminationAdditional FeatureDual Supply VoltageMax Junction Temperature (Tj)Nominal VgsTurn Off Time-Max (toff)Turn On Time-Max (ton)View Compare
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SI7123DN-T1-GE312 WeeksTinSurface MountSurface MountPowerPAK® 1212-88SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3yesObsolete1 (Unlimited)5EAR9910.6mOhmOther TransistorsMOSFET (Metal Oxide)DUALC BEND260408S-XDSO-C51SINGLE WITH BUILT-IN DIODE11.5W TaENHANCEMENT MODE1.5WDRAIN25 nsP-ChannelSWITCHING10.6m Ω @ 15A, 4.5V1V @ 250μA3729pF @ 10V10.2A Ta90nC @ 4.5V88ns20V1.8V 4.5V±8V88 ns82 ns-25A-1V8V-20V40A1.04mm3.3mm3.3mmUnknownNoROHS3 CompliantLead Free---------------------
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--Surface MountSurface MountPowerPAK® SO-8---55°C~150°C TJTape & Reel (TR)TrenchFET®2013--Obsolete1 (Unlimited)--3.5mOhm-MOSFET (Metal Oxide)--------15.4W Ta 83W Tc----N-Channel-3.5mOhm @ 20A, 10V3V @ 250μA6900pF @ 20V50A Tc155nC @ 10V-40V4.5V 10V±20V--50A-20V-------ROHS3 Compliant-PowerPAK® SO-8506.605978mg150°C-55°CSingle6.9nF3.5mOhm3.5 mΩ------------
-
--Surface MountSurface MountPowerPAK® 1212-88--Cut Tape (CT)TrenchFET®2014e3yesObsolete1 (Unlimited)5EAR99-FET General Purpose PowersMOSFET (Metal Oxide)DUALC BEND260308S-XDSO-C51---ENHANCEMENT MODE1.5WDRAIN14 nsN-ChannelSWITCHING19m Ω @ 10A, 10V3.5V @ 250μA-6.3A Ta45nC @ 10V12ns---12 ns50 ns10A2.5V20V60V40A---No SVHCNoROHS3 CompliantLead Free--150°C-55°CSingle---PURE MATTE TIN1.5W6.3A24 mJ--------
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14 WeeksTinSurface MountSurface MountPowerPAK® SO-88SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2007e3yesActive1 (Unlimited)5EAR9911mOhm-MOSFET (Metal Oxide)DUALFLAT--8R-PDSO-F51-15.4W Ta 96W TcENHANCEMENT MODE5.4WDRAIN17 nsN-ChannelSWITCHING11m Ω @ 15A, 10V2.5V @ 250μA2900pF @ 35V28A Tc100nC @ 10V255ns-4.5V 10V±20V100 ns39 ns28A2V20V75V60A1.17mm4.9mm5.89mmUnknownNoROHS3 CompliantLead Free-506.605978mg--Single-------S17-0173-SingleSMD/SMTAVALANCHE RATED75V150°C2 V90ns96ns
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