SI7123DN-T1-GE3

Vishay Siliconix SI7123DN-T1-GE3

Part Number:
SI7123DN-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
3070052-SI7123DN-T1-GE3
Description:
MOSFET P-CH 20V 10.2A 1212-8
ECAD Model:
Datasheet:
SI7123DN-T1-GE3

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Specifications
Vishay Siliconix SI7123DN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7123DN-T1-GE3.
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® 1212-8
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Resistance
    10.6mOhm
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    8
  • JESD-30 Code
    S-XDSO-C5
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    1.5W Ta
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.5W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    25 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    10.6m Ω @ 15A, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3729pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    10.2A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    90nC @ 4.5V
  • Rise Time
    88ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    88 ns
  • Turn-Off Delay Time
    82 ns
  • Continuous Drain Current (ID)
    -25A
  • Threshold Voltage
    -1V
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    -20V
  • Pulsed Drain Current-Max (IDM)
    40A
  • Height
    1.04mm
  • Length
    3.3mm
  • Width
    3.3mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI7123DN-T1-GE3 Overview
A device's maximum input capacitance is 3729pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is -25A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-20V, and this device has a drain-to-source breakdown voltage of -20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 82 ns.Its maximum pulsed drain current is 40A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -1V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (1.8V 4.5V) to reduce its overall power consumption.

SI7123DN-T1-GE3 Features
a continuous drain current (ID) of -25A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 82 ns
based on its rated peak drain current 40A.
a threshold voltage of -1V
a 20V drain to source voltage (Vdss)


SI7123DN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7123DN-T1-GE3 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
SI7123DN-T1-GE3 More Descriptions
Si7123DN Series P-Channel 20 V 0.0106 Ohm SMT Power Mosfet - PowerPAK-1212-8
Trans MOSFET P-CH 20V 16A 8-Pin PowerPAK 1212 T/R
20V 10.2A 1.5W 10.6m´Î@4.5V15A 1V@250Ã×A P Channel PowerPAK 1212-8 MOSFETs ROHS
P-Channel 20-V (D-S) Mosfet Rohs Compliant: Yes
20V 25A 52W 10.6mohm @ 4.5V | Siliconix / Vishay SI7123DN-T1-GE3
P CH MOSFET, -20V, 25A, POWERPAK
MOSFET P-CH 20V 10.2A PPAK1212-8
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to SI7123DN-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Weight
    Max Operating Temperature
    Min Operating Temperature
    Element Configuration
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Terminal Finish
    Max Power Dissipation
    Drain Current-Max (Abs) (ID)
    Avalanche Energy Rating (Eas)
    Manufacturer Package Identifier
    Termination
    Additional Feature
    Dual Supply Voltage
    Max Junction Temperature (Tj)
    Nominal Vgs
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    View Compare
  • SI7123DN-T1-GE3
    SI7123DN-T1-GE3
    12 Weeks
    Tin
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    10.6mOhm
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    8
    S-XDSO-C5
    1
    SINGLE WITH BUILT-IN DIODE
    1
    1.5W Ta
    ENHANCEMENT MODE
    1.5W
    DRAIN
    25 ns
    P-Channel
    SWITCHING
    10.6m Ω @ 15A, 4.5V
    1V @ 250μA
    3729pF @ 10V
    10.2A Ta
    90nC @ 4.5V
    88ns
    20V
    1.8V 4.5V
    ±8V
    88 ns
    82 ns
    -25A
    -1V
    8V
    -20V
    40A
    1.04mm
    3.3mm
    3.3mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI7156DP-T1-GE3
    -
    -
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    3.5mOhm
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    1
    5.4W Ta 83W Tc
    -
    -
    -
    -
    N-Channel
    -
    3.5mOhm @ 20A, 10V
    3V @ 250μA
    6900pF @ 20V
    50A Tc
    155nC @ 10V
    -
    40V
    4.5V 10V
    ±20V
    -
    -
    50A
    -
    20V
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    PowerPAK® SO-8
    506.605978mg
    150°C
    -55°C
    Single
    6.9nF
    3.5mOhm
    3.5 mΩ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI7120DN-T1-GE3
    -
    -
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8
    8
    -
    -
    Cut Tape (CT)
    TrenchFET®
    2014
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    -
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    30
    8
    S-XDSO-C5
    1
    -
    -
    -
    ENHANCEMENT MODE
    1.5W
    DRAIN
    14 ns
    N-Channel
    SWITCHING
    19m Ω @ 10A, 10V
    3.5V @ 250μA
    -
    6.3A Ta
    45nC @ 10V
    12ns
    -
    -
    -
    12 ns
    50 ns
    10A
    2.5V
    20V
    60V
    40A
    -
    -
    -
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    150°C
    -55°C
    Single
    -
    -
    -
    PURE MATTE TIN
    1.5W
    6.3A
    24 mJ
    -
    -
    -
    -
    -
    -
    -
    -
  • SI7148DP-T1-E3
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2007
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    11mOhm
    -
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    -
    -
    8
    R-PDSO-F5
    1
    -
    1
    5.4W Ta 96W Tc
    ENHANCEMENT MODE
    5.4W
    DRAIN
    17 ns
    N-Channel
    SWITCHING
    11m Ω @ 15A, 10V
    2.5V @ 250μA
    2900pF @ 35V
    28A Tc
    100nC @ 10V
    255ns
    -
    4.5V 10V
    ±20V
    100 ns
    39 ns
    28A
    2V
    20V
    75V
    60A
    1.17mm
    4.9mm
    5.89mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    506.605978mg
    -
    -
    Single
    -
    -
    -
    -
    -
    -
    -
    S17-0173-Single
    SMD/SMT
    AVALANCHE RATED
    75V
    150°C
    2 V
    90ns
    96ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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