Vishay Siliconix SI7196DP-T1-GE3
- Part Number:
- SI7196DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3554325-SI7196DP-T1-GE3
- Description:
- MOSFET N-CH 30V 16A PPAK SO-8
- Datasheet:
- SI7196DP-T1-GE3
Vishay Siliconix SI7196DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7196DP-T1-GE3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® SO-8
- Number of Pins8
- Weight506.605978mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesWFET®
- Published2005
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PDSO-C5
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max5W Ta 41.6W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation5W
- Case ConnectionDRAIN
- Turn On Delay Time21 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs11m Ω @ 12A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1577pF @ 15V
- Current - Continuous Drain (Id) @ 25°C16A Tc
- Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
- Rise Time12ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)12 ns
- Turn-Off Delay Time22 ns
- Continuous Drain Current (ID)60A
- Threshold Voltage3V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)50A
- Avalanche Energy Rating (Eas)20 mJ
- Height1.04mm
- Length4.9mm
- Width5.89mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
SI7196DP-T1-GE3 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 20 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1577pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 60A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 22 ns.Peak drain current for this device is 50A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 21 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.3V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
SI7196DP-T1-GE3 Features
the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 22 ns
based on its rated peak drain current 50A.
a threshold voltage of 3V
SI7196DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7196DP-T1-GE3 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 20 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1577pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 60A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 22 ns.Peak drain current for this device is 50A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 21 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.3V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
SI7196DP-T1-GE3 Features
the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 22 ns
based on its rated peak drain current 50A.
a threshold voltage of 3V
SI7196DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7196DP-T1-GE3 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
SI7196DP-T1-GE3 More Descriptions
Trans MOSFET N-CH 30V 15.8A 8-Pin PowerPAK SO T/R
N CHANNEL MOSFET, 30V, 60A, SOIC
MOSFET 30V 16A 41.6W 1.1mohm @ 10V
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:60000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0145ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:5W ;RoHS Compliant: Yes
N CHANNEL MOSFET, 30V, 60A, SOIC
MOSFET 30V 16A 41.6W 1.1mohm @ 10V
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:60000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0145ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:5W ;RoHS Compliant: Yes
The three parts on the right have similar specifications to SI7196DP-T1-GE3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusFactory Lead TimePbfree CodeResistancePin CountDrain to Source Voltage (Vdss)Lead FreeContact PlatingSubcategoryNominal VgsReach Compliance CodeQualification StatusConfigurationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxView Compare
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SI7196DP-T1-GE3Surface MountSurface MountPowerPAK® SO-88506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)WFET®2005e3Obsolete1 (Unlimited)5EAR99Matte Tin (Sn)MOSFET (Metal Oxide)DUALC BEND26030R-PDSO-C5115W Ta 41.6W TcSingleENHANCEMENT MODE5WDRAIN21 nsN-ChannelSWITCHING11m Ω @ 12A, 10V3V @ 250μA1577pF @ 15V16A Tc38nC @ 10V12ns4.5V 10V±20V12 ns22 ns60A3V20V30V50A20 mJ1.04mm4.9mm5.89mmUnknownNoROHS3 Compliant---------------
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Surface MountSurface MountPowerPAK® 1212-88-SILICON-50°C~150°C TJTape & Reel (TR)TrenchFET®2015e3Active1 (Unlimited)5EAR99Matte Tin (Sn)MOSFET (Metal Oxide)DUALFLAT--S-PDSO-F5113.7W Ta 52W TcSingleENHANCEMENT MODE3.7WDRAIN30 nsP-ChannelSWITCHING134m Ω @ 4A, 10V3V @ 250μA1480pF @ 50V13.2A Tc55nC @ 10V110ns4.5V 10V±20V40 ns51 ns-13.2A-20V-100V20A-1.04mm3.05mm3.05mm-NoROHS3 Compliant14 Weeksyes134MOhm8100VLead Free--------
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Surface MountSurface MountPowerPAK® SO-88506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2008e3Active1 (Unlimited)5EAR99-MOSFET (Metal Oxide)DUALC BEND26040R-XDSO-C5116.25W Ta 104W TcSingleENHANCEMENT MODE6.25WDRAIN21 nsN-ChannelSWITCHING14m Ω @ 10A, 10V4.5V @ 250μA2870pF @ 50V60A Tc72nC @ 10V10ns10V±20V11 ns27 ns60A4.5V20V100V--1.04mm4.9mm5.89mmUnknownNoROHS3 Compliant14 Weeksyes14mOhm8-Lead FreeTinFET General Purpose Power4.5 V-----
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Surface MountSurface MountPowerPAK® SO-88-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3Active1 (Unlimited)5EAR99Matte Tin (Sn)MOSFET (Metal Oxide)DUALC BEND26040R-XDSO-C51-5.4W Ta 83W Tc-ENHANCEMENT MODE5WDRAIN-P-ChannelSWITCHING7m Ω @ 15A, 10V2.5V @ 250μA5170pF @ 15V30A Tc180nC @ 10V14ns4.5V 10V±25V11 ns40 ns29A-16V-25V60A20 mJ-----ROHS3 Compliant21 Weeksyes-830V--Other Transistors-unknownNot QualifiedSINGLE WITH BUILT-IN DIODE20.7A0.007Ohm
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