SI7196DP-T1-GE3

Vishay Siliconix SI7196DP-T1-GE3

Part Number:
SI7196DP-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
3554325-SI7196DP-T1-GE3
Description:
MOSFET N-CH 30V 16A PPAK SO-8
ECAD Model:
Datasheet:
SI7196DP-T1-GE3

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Specifications
Vishay Siliconix SI7196DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7196DP-T1-GE3.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® SO-8
  • Number of Pins
    8
  • Weight
    506.605978mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    WFET®
  • Published
    2005
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PDSO-C5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    5W Ta 41.6W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    5W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    21 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    11m Ω @ 12A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1577pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    16A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    38nC @ 10V
  • Rise Time
    12ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    12 ns
  • Turn-Off Delay Time
    22 ns
  • Continuous Drain Current (ID)
    60A
  • Threshold Voltage
    3V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    50A
  • Avalanche Energy Rating (Eas)
    20 mJ
  • Height
    1.04mm
  • Length
    4.9mm
  • Width
    5.89mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
SI7196DP-T1-GE3 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 20 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1577pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 60A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 22 ns.Peak drain current for this device is 50A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 21 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.3V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

SI7196DP-T1-GE3 Features
the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 22 ns
based on its rated peak drain current 50A.
a threshold voltage of 3V


SI7196DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7196DP-T1-GE3 applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
SI7196DP-T1-GE3 More Descriptions
Trans MOSFET N-CH 30V 15.8A 8-Pin PowerPAK SO T/R
N CHANNEL MOSFET, 30V, 60A, SOIC
MOSFET 30V 16A 41.6W 1.1mohm @ 10V
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:60000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0145ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:5W ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to SI7196DP-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Factory Lead Time
    Pbfree Code
    Resistance
    Pin Count
    Drain to Source Voltage (Vdss)
    Lead Free
    Contact Plating
    Subcategory
    Nominal Vgs
    Reach Compliance Code
    Qualification Status
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    View Compare
  • SI7196DP-T1-GE3
    SI7196DP-T1-GE3
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    WFET®
    2005
    e3
    Obsolete
    1 (Unlimited)
    5
    EAR99
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    30
    R-PDSO-C5
    1
    1
    5W Ta 41.6W Tc
    Single
    ENHANCEMENT MODE
    5W
    DRAIN
    21 ns
    N-Channel
    SWITCHING
    11m Ω @ 12A, 10V
    3V @ 250μA
    1577pF @ 15V
    16A Tc
    38nC @ 10V
    12ns
    4.5V 10V
    ±20V
    12 ns
    22 ns
    60A
    3V
    20V
    30V
    50A
    20 mJ
    1.04mm
    4.9mm
    5.89mm
    Unknown
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI7113DN-T1-E3
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8
    8
    -
    SILICON
    -50°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2015
    e3
    Active
    1 (Unlimited)
    5
    EAR99
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    -
    -
    S-PDSO-F5
    1
    1
    3.7W Ta 52W Tc
    Single
    ENHANCEMENT MODE
    3.7W
    DRAIN
    30 ns
    P-Channel
    SWITCHING
    134m Ω @ 4A, 10V
    3V @ 250μA
    1480pF @ 50V
    13.2A Tc
    55nC @ 10V
    110ns
    4.5V 10V
    ±20V
    40 ns
    51 ns
    -13.2A
    -
    20V
    -100V
    20A
    -
    1.04mm
    3.05mm
    3.05mm
    -
    No
    ROHS3 Compliant
    14 Weeks
    yes
    134MOhm
    8
    100V
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • SI7178DP-T1-GE3
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2008
    e3
    Active
    1 (Unlimited)
    5
    EAR99
    -
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    R-XDSO-C5
    1
    1
    6.25W Ta 104W Tc
    Single
    ENHANCEMENT MODE
    6.25W
    DRAIN
    21 ns
    N-Channel
    SWITCHING
    14m Ω @ 10A, 10V
    4.5V @ 250μA
    2870pF @ 50V
    60A Tc
    72nC @ 10V
    10ns
    10V
    ±20V
    11 ns
    27 ns
    60A
    4.5V
    20V
    100V
    -
    -
    1.04mm
    4.9mm
    5.89mm
    Unknown
    No
    ROHS3 Compliant
    14 Weeks
    yes
    14mOhm
    8
    -
    Lead Free
    Tin
    FET General Purpose Power
    4.5 V
    -
    -
    -
    -
    -
  • SI7159DP-T1-GE3
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    e3
    Active
    1 (Unlimited)
    5
    EAR99
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    40
    R-XDSO-C5
    1
    -
    5.4W Ta 83W Tc
    -
    ENHANCEMENT MODE
    5W
    DRAIN
    -
    P-Channel
    SWITCHING
    7m Ω @ 15A, 10V
    2.5V @ 250μA
    5170pF @ 15V
    30A Tc
    180nC @ 10V
    14ns
    4.5V 10V
    ±25V
    11 ns
    40 ns
    29A
    -
    16V
    -25V
    60A
    20 mJ
    -
    -
    -
    -
    -
    ROHS3 Compliant
    21 Weeks
    yes
    -
    8
    30V
    -
    -
    Other Transistors
    -
    unknown
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    20.7A
    0.007Ohm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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