Vishay Siliconix SI7113DN-T1-E3
- Part Number:
- SI7113DN-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3070303-SI7113DN-T1-E3
- Description:
- MOSFET P-CH 100V 13.2A 1212-8
- Datasheet:
- SI7113DN-T1-E3
Vishay Siliconix SI7113DN-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7113DN-T1-E3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® 1212-8
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-50°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2015
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Resistance134MOhm
- Terminal FinishMatte Tin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormFLAT
- Pin Count8
- JESD-30 CodeS-PDSO-F5
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max3.7W Ta 52W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.7W
- Case ConnectionDRAIN
- Turn On Delay Time30 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs134m Ω @ 4A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1480pF @ 50V
- Current - Continuous Drain (Id) @ 25°C13.2A Tc
- Gate Charge (Qg) (Max) @ Vgs55nC @ 10V
- Rise Time110ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)40 ns
- Turn-Off Delay Time51 ns
- Continuous Drain Current (ID)-13.2A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-100V
- Pulsed Drain Current-Max (IDM)20A
- Height1.04mm
- Length3.05mm
- Width3.05mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI7113DN-T1-E3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1480pF @ 50V.This device has a continuous drain current (ID) of [-13.2A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-100V, the drain-source breakdown voltage is -100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 51 ns.A maximum pulsed drain current of 20A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 30 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
SI7113DN-T1-E3 Features
a continuous drain current (ID) of -13.2A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 51 ns
based on its rated peak drain current 20A.
a 100V drain to source voltage (Vdss)
SI7113DN-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7113DN-T1-E3 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1480pF @ 50V.This device has a continuous drain current (ID) of [-13.2A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-100V, the drain-source breakdown voltage is -100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 51 ns.A maximum pulsed drain current of 20A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 30 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
SI7113DN-T1-E3 Features
a continuous drain current (ID) of -13.2A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 51 ns
based on its rated peak drain current 20A.
a 100V drain to source voltage (Vdss)
SI7113DN-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7113DN-T1-E3 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
SI7113DN-T1-E3 More Descriptions
Si7113DN Series P-Channel 100 V 0.134 Ohm SMT Power Mosfet -PowerPAK - 1212-8
Trans MOSFET P-CH 100V 3.5A 8-Pin PowerPAK 1212 T/R / MOSFET P-CH 100V 13.2A 1212-8
Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:13.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:20V; Gate Source Threshold Voltage Max:3V; Power Dissipation:3.7W; No. Of Pins:8Pins Rohs Compliant: No |Vishay SI7113DN-T1-E3.
Trans MOSFET P-CH 100V 3.5A 8-Pin PowerPAK 1212 T/R / MOSFET P-CH 100V 13.2A 1212-8
Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:13.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:20V; Gate Source Threshold Voltage Max:3V; Power Dissipation:3.7W; No. Of Pins:8Pins Rohs Compliant: No |Vishay SI7113DN-T1-E3.
The three parts on the right have similar specifications to SI7113DN-T1-E3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishTechnologyTerminal PositionTerminal FormPin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeContact PlatingWeightSubcategoryPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Threshold VoltageNominal VgsREACH SVHCConfigurationManufacturer Package IdentifierTerminationAdditional FeatureDual Supply VoltageMax Junction Temperature (Tj)Turn Off Time-Max (toff)Turn On Time-Max (ton)View Compare
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SI7113DN-T1-E314 WeeksSurface MountSurface MountPowerPAK® 1212-88SILICON-50°C~150°C TJTape & Reel (TR)TrenchFET®2015e3yesActive1 (Unlimited)5EAR99134MOhmMatte Tin (Sn)MOSFET (Metal Oxide)DUALFLAT8S-PDSO-F5113.7W Ta 52W TcSingleENHANCEMENT MODE3.7WDRAIN30 nsP-ChannelSWITCHING134m Ω @ 4A, 10V3V @ 250μA1480pF @ 50V13.2A Tc55nC @ 10V110ns100V4.5V 10V±20V40 ns51 ns-13.2A20V-100V20A1.04mm3.05mm3.05mmNoROHS3 CompliantLead Free-----------------
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14 WeeksSurface MountSurface MountPowerPAK® SO-88SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2008e3yesActive1 (Unlimited)5EAR9914mOhm-MOSFET (Metal Oxide)DUALC BEND8R-XDSO-C5116.25W Ta 104W TcSingleENHANCEMENT MODE6.25WDRAIN21 nsN-ChannelSWITCHING14m Ω @ 10A, 10V4.5V @ 250μA2870pF @ 50V60A Tc72nC @ 10V10ns-10V±20V11 ns27 ns60A20V100V-1.04mm4.9mm5.89mmNoROHS3 CompliantLead FreeTin506.605978mgFET General Purpose Power260404.5V4.5 VUnknown--------
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12 WeeksSurface MountSurface MountPowerPAK® 1212-88SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3yesObsolete1 (Unlimited)5EAR9910.6mOhm-MOSFET (Metal Oxide)DUALC BEND8S-XDSO-C5111.5W Ta-ENHANCEMENT MODE1.5WDRAIN25 nsP-ChannelSWITCHING10.6m Ω @ 15A, 4.5V1V @ 250μA3729pF @ 10V10.2A Ta90nC @ 4.5V88ns20V1.8V 4.5V±8V88 ns82 ns-25A8V-20V40A1.04mm3.3mm3.3mmNoROHS3 CompliantLead FreeTin-Other Transistors26040-1V-UnknownSINGLE WITH BUILT-IN DIODE-------
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14 WeeksSurface MountSurface MountPowerPAK® SO-88SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2007e3yesActive1 (Unlimited)5EAR9911mOhm-MOSFET (Metal Oxide)DUALFLAT8R-PDSO-F5115.4W Ta 96W TcSingleENHANCEMENT MODE5.4WDRAIN17 nsN-ChannelSWITCHING11m Ω @ 15A, 10V2.5V @ 250μA2900pF @ 35V28A Tc100nC @ 10V255ns-4.5V 10V±20V100 ns39 ns28A20V75V60A1.17mm4.9mm5.89mmNoROHS3 CompliantLead FreeTin506.605978mg---2V2 VUnknown-S17-0173-SingleSMD/SMTAVALANCHE RATED75V150°C90ns96ns
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