SI7113DN-T1-E3

Vishay Siliconix SI7113DN-T1-E3

Part Number:
SI7113DN-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
3070303-SI7113DN-T1-E3
Description:
MOSFET P-CH 100V 13.2A 1212-8
ECAD Model:
Datasheet:
SI7113DN-T1-E3

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Specifications
Vishay Siliconix SI7113DN-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7113DN-T1-E3.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® 1212-8
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -50°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2015
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Resistance
    134MOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Pin Count
    8
  • JESD-30 Code
    S-PDSO-F5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    3.7W Ta 52W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.7W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    30 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    134m Ω @ 4A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1480pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    13.2A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    55nC @ 10V
  • Rise Time
    110ns
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    40 ns
  • Turn-Off Delay Time
    51 ns
  • Continuous Drain Current (ID)
    -13.2A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -100V
  • Pulsed Drain Current-Max (IDM)
    20A
  • Height
    1.04mm
  • Length
    3.05mm
  • Width
    3.05mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI7113DN-T1-E3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1480pF @ 50V.This device has a continuous drain current (ID) of [-13.2A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-100V, the drain-source breakdown voltage is -100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 51 ns.A maximum pulsed drain current of 20A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 30 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

SI7113DN-T1-E3 Features
a continuous drain current (ID) of -13.2A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 51 ns
based on its rated peak drain current 20A.
a 100V drain to source voltage (Vdss)


SI7113DN-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7113DN-T1-E3 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
SI7113DN-T1-E3 More Descriptions
Si7113DN Series P-Channel 100 V 0.134 Ohm SMT Power Mosfet -PowerPAK - 1212-8
Trans MOSFET P-CH 100V 3.5A 8-Pin PowerPAK 1212 T/R / MOSFET P-CH 100V 13.2A 1212-8
Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:13.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:20V; Gate Source Threshold Voltage Max:3V; Power Dissipation:3.7W; No. Of Pins:8Pins Rohs Compliant: No |Vishay SI7113DN-T1-E3.
Product Comparison
The three parts on the right have similar specifications to SI7113DN-T1-E3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Pin Count
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Contact Plating
    Weight
    Subcategory
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Threshold Voltage
    Nominal Vgs
    REACH SVHC
    Configuration
    Manufacturer Package Identifier
    Termination
    Additional Feature
    Dual Supply Voltage
    Max Junction Temperature (Tj)
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    View Compare
  • SI7113DN-T1-E3
    SI7113DN-T1-E3
    14 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8
    8
    SILICON
    -50°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2015
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    134MOhm
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    8
    S-PDSO-F5
    1
    1
    3.7W Ta 52W Tc
    Single
    ENHANCEMENT MODE
    3.7W
    DRAIN
    30 ns
    P-Channel
    SWITCHING
    134m Ω @ 4A, 10V
    3V @ 250μA
    1480pF @ 50V
    13.2A Tc
    55nC @ 10V
    110ns
    100V
    4.5V 10V
    ±20V
    40 ns
    51 ns
    -13.2A
    20V
    -100V
    20A
    1.04mm
    3.05mm
    3.05mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI7178DP-T1-GE3
    14 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2008
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    14mOhm
    -
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    8
    R-XDSO-C5
    1
    1
    6.25W Ta 104W Tc
    Single
    ENHANCEMENT MODE
    6.25W
    DRAIN
    21 ns
    N-Channel
    SWITCHING
    14m Ω @ 10A, 10V
    4.5V @ 250μA
    2870pF @ 50V
    60A Tc
    72nC @ 10V
    10ns
    -
    10V
    ±20V
    11 ns
    27 ns
    60A
    20V
    100V
    -
    1.04mm
    4.9mm
    5.89mm
    No
    ROHS3 Compliant
    Lead Free
    Tin
    506.605978mg
    FET General Purpose Power
    260
    40
    4.5V
    4.5 V
    Unknown
    -
    -
    -
    -
    -
    -
    -
    -
  • SI7123DN-T1-GE3
    12 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    10.6mOhm
    -
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    8
    S-XDSO-C5
    1
    1
    1.5W Ta
    -
    ENHANCEMENT MODE
    1.5W
    DRAIN
    25 ns
    P-Channel
    SWITCHING
    10.6m Ω @ 15A, 4.5V
    1V @ 250μA
    3729pF @ 10V
    10.2A Ta
    90nC @ 4.5V
    88ns
    20V
    1.8V 4.5V
    ±8V
    88 ns
    82 ns
    -25A
    8V
    -20V
    40A
    1.04mm
    3.3mm
    3.3mm
    No
    ROHS3 Compliant
    Lead Free
    Tin
    -
    Other Transistors
    260
    40
    -1V
    -
    Unknown
    SINGLE WITH BUILT-IN DIODE
    -
    -
    -
    -
    -
    -
    -
  • SI7148DP-T1-E3
    14 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2007
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    11mOhm
    -
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    8
    R-PDSO-F5
    1
    1
    5.4W Ta 96W Tc
    Single
    ENHANCEMENT MODE
    5.4W
    DRAIN
    17 ns
    N-Channel
    SWITCHING
    11m Ω @ 15A, 10V
    2.5V @ 250μA
    2900pF @ 35V
    28A Tc
    100nC @ 10V
    255ns
    -
    4.5V 10V
    ±20V
    100 ns
    39 ns
    28A
    20V
    75V
    60A
    1.17mm
    4.9mm
    5.89mm
    No
    ROHS3 Compliant
    Lead Free
    Tin
    506.605978mg
    -
    -
    -
    2V
    2 V
    Unknown
    -
    S17-0173-Single
    SMD/SMT
    AVALANCHE RATED
    75V
    150°C
    90ns
    96ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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