Vishay Siliconix SI7160DP-T1-GE3

SI7160DP-T1-GE3 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 20 mJ.A device's maximal input capacitance is 2970pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 20A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 43 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 60A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 29 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.This device reduces its overall power consumption by using drive voltage (4.5V 10V).

SI7160DP-T1-GE3 Features
the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 43 ns
based on its rated peak drain current 60A.


SI7160DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7160DP-T1-GE3 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples