Vishay Siliconix SI7119DN-T1-GE3

SI7119DN-T1-GE3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 666pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -3.8A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-200V. And this device has -200V drain to source breakdown voltage.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 5A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -4V threshold voltage. Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (6V 10V), this device helps reduce its overall power consumption.

SI7119DN-T1-GE3 Features
a continuous drain current (ID) of -3.8A
a drain-to-source breakdown voltage of -200V voltage
based on its rated peak drain current 5A.
a threshold voltage of -4V
a 200V drain to source voltage (Vdss)


SI7119DN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7119DN-T1-GE3 applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools