PSMN7R0-30YL,115

Nexperia USA Inc. PSMN7R0-30YL,115

Part Number:
PSMN7R0-30YL,115
Manufacturer:
Nexperia USA Inc.
Ventron No:
2478603-PSMN7R0-30YL,115
Description:
MOSFET N-CH 30V 76A LFPAK
ECAD Model:
Datasheet:
PSMN7R0-30YL,115

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Specifications
Nexperia USA Inc. PSMN7R0-30YL,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PSMN7R0-30YL,115.
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-100, SOT-669
  • Number of Pins
    4
  • Weight
    453.59237mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Resistance
    7MOhm
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    4
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    51W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    51W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    24 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    7m Ω @ 15A, 10V
  • Vgs(th) (Max) @ Id
    2.15V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    1270pF @ 12V
  • Current - Continuous Drain (Id) @ 25°C
    76A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    22nC @ 10V
  • Rise Time
    39ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    11 ns
  • Turn-Off Delay Time
    30 ns
  • Continuous Drain Current (ID)
    76A
  • JEDEC-95 Code
    MO-235
  • Gate to Source Voltage (Vgs)
    20V
  • Max Dual Supply Voltage
    30V
  • Drain Current-Max (Abs) (ID)
    65A
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    260A
  • Max Junction Temperature (Tj)
    175°C
  • Height
    1.2mm
  • Length
    6.35mm
  • Width
    6.35mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
PSMN7R0-30YL,115 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1270pF @ 12V.This device has a continuous drain current (ID) of [76A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.A device's drain current is its maximum continuous current, and this device's drain current is 65A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 30 ns.A maximum pulsed drain current of 260A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 24 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 30V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

PSMN7R0-30YL,115 Features
a continuous drain current (ID) of 76A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 260A.


PSMN7R0-30YL,115 Applications
There are a lot of Nexperia USA Inc.
PSMN7R0-30YL,115 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
PSMN7R0-30YL,115 More Descriptions
PSMN7R0-30YL - N-channel 30 V 7 mΩ logic level MOSFET in LFPAK
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:76A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):4.92mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.7V ;RoHS Compliant: Yes
MOSFET, N CH 30V 65A SOT669; Transistor Polarity: N Channel; Continuous Drain Current Id: 65A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.00492ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 51W; Transistor Case Style: SOT-669; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 65A; On State Resistance Max: 7mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
Product Comparison
The three parts on the right have similar specifications to PSMN7R0-30YL,115.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Finish
    JESD-30 Code
    Avalanche Energy Rating (Eas)
    Additional Feature
    Reference Standard
    Drain to Source Voltage (Vdss)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Series
    Subcategory
    Reach Compliance Code
    Qualification Status
    View Compare
  • PSMN7R0-30YL,115
    PSMN7R0-30YL,115
    12 Weeks
    Tin
    Surface Mount
    Surface Mount
    SC-100, SOT-669
    4
    453.59237mg
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2011
    e3
    Active
    1 (Unlimited)
    4
    EAR99
    7MOhm
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    30
    4
    1
    SINGLE WITH BUILT-IN DIODE
    1
    51W Tc
    ENHANCEMENT MODE
    51W
    DRAIN
    24 ns
    N-Channel
    SWITCHING
    7m Ω @ 15A, 10V
    2.15V @ 1mA
    1270pF @ 12V
    76A Tc
    22nC @ 10V
    39ns
    4.5V 10V
    ±20V
    11 ns
    30 ns
    76A
    MO-235
    20V
    30V
    65A
    30V
    260A
    175°C
    1.2mm
    6.35mm
    6.35mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PSMN2R9-30MLC,115
    26 Weeks
    -
    -
    Surface Mount
    SOT-1210, 8-LFPAK33
    8
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2012
    e3
    Active
    1 (Unlimited)
    4
    -
    -
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    -
    -
    8
    1
    SINGLE WITH BUILT-IN DIODE
    -
    91W Tc
    ENHANCEMENT MODE
    91W
    DRAIN
    17.7 ns
    N-Channel
    SWITCHING
    2.9m Ω @ 25A, 10V
    2.15V @ 1mA
    2419pF @ 15V
    70A Tc
    36.1nC @ 10V
    30.8ns
    4.5V 10V
    ±20V
    19.3 ns
    24.6 ns
    70A
    -
    20V
    30V
    -
    -
    523A
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    YES
    Tin (Sn)
    R-PSSO-G4
    75 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PSMN014-80YLX
    12 Weeks
    -
    Surface Mount
    Surface Mount
    SC-100, SOT-669
    -
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2016
    -
    Active
    1 (Unlimited)
    4
    -
    -
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    4
    1
    SINGLE WITH BUILT-IN DIODE
    -
    147W Tc
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    14m Ω @ 15A, 10V
    2.1V @ 1mA
    4640pF @ 25V
    62A Tc
    28.9nC @ 5V
    -
    5V 10V
    ±20V
    -
    -
    62A
    MO-235
    -
    -
    -
    -
    250A
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    R-PSSO-G4
    79.6 mJ
    AVALANCHE RATED
    IEC-60134
    80V
    0.015Ohm
    80V
    -
    -
    -
    -
  • PSMN020-150W,127
    -
    -
    -
    Through Hole
    TO-247-3
    -
    -
    SILICON
    -55°C~175°C TJ
    Tube
    1999
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    MOSFET (Metal Oxide)
    SINGLE
    -
    NOT SPECIFIED
    NOT SPECIFIED
    3
    1
    SINGLE WITH BUILT-IN DIODE
    -
    300W Tc
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    20m Ω @ 25A, 10V
    4V @ 1mA
    9537pF @ 25V
    73A Tc
    227nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    73A
    -
    290A
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    NO
    Matte Tin (Sn)
    R-PSFM-T3
    707 mJ
    -
    -
    150V
    0.02Ohm
    150V
    TrenchMOS™
    FET General Purpose Power
    unknown
    Not Qualified
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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