Nexperia USA Inc. PSMN7R0-30YL,115
- Part Number:
- PSMN7R0-30YL,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2478603-PSMN7R0-30YL,115
- Description:
- MOSFET N-CH 30V 76A LFPAK
- Datasheet:
- PSMN7R0-30YL,115
Nexperia USA Inc. PSMN7R0-30YL,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PSMN7R0-30YL,115.
- Factory Lead Time12 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-100, SOT-669
- Number of Pins4
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Resistance7MOhm
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count4
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max51W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation51W
- Case ConnectionDRAIN
- Turn On Delay Time24 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id2.15V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds1270pF @ 12V
- Current - Continuous Drain (Id) @ 25°C76A Tc
- Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
- Rise Time39ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)11 ns
- Turn-Off Delay Time30 ns
- Continuous Drain Current (ID)76A
- JEDEC-95 CodeMO-235
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage30V
- Drain Current-Max (Abs) (ID)65A
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)260A
- Max Junction Temperature (Tj)175°C
- Height1.2mm
- Length6.35mm
- Width6.35mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PSMN7R0-30YL,115 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1270pF @ 12V.This device has a continuous drain current (ID) of [76A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.A device's drain current is its maximum continuous current, and this device's drain current is 65A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 30 ns.A maximum pulsed drain current of 260A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 24 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 30V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
PSMN7R0-30YL,115 Features
a continuous drain current (ID) of 76A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 260A.
PSMN7R0-30YL,115 Applications
There are a lot of Nexperia USA Inc.
PSMN7R0-30YL,115 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1270pF @ 12V.This device has a continuous drain current (ID) of [76A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.A device's drain current is its maximum continuous current, and this device's drain current is 65A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 30 ns.A maximum pulsed drain current of 260A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 24 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 30V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
PSMN7R0-30YL,115 Features
a continuous drain current (ID) of 76A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 260A.
PSMN7R0-30YL,115 Applications
There are a lot of Nexperia USA Inc.
PSMN7R0-30YL,115 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
PSMN7R0-30YL,115 More Descriptions
PSMN7R0-30YL - N-channel 30 V 7 mΩ logic level MOSFET in LFPAK
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:76A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):4.92mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.7V ;RoHS Compliant: Yes
MOSFET, N CH 30V 65A SOT669; Transistor Polarity: N Channel; Continuous Drain Current Id: 65A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.00492ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 51W; Transistor Case Style: SOT-669; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 65A; On State Resistance Max: 7mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:76A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):4.92mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.7V ;RoHS Compliant: Yes
MOSFET, N CH 30V 65A SOT669; Transistor Polarity: N Channel; Continuous Drain Current Id: 65A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.00492ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 51W; Transistor Case Style: SOT-669; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 65A; On State Resistance Max: 7mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
The three parts on the right have similar specifications to PSMN7R0-30YL,115.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Max Dual Supply VoltageDrain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Max Junction Temperature (Tj)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeSurface MountTerminal FinishJESD-30 CodeAvalanche Energy Rating (Eas)Additional FeatureReference StandardDrain to Source Voltage (Vdss)Drain-source On Resistance-MaxDS Breakdown Voltage-MinSeriesSubcategoryReach Compliance CodeQualification StatusView Compare
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PSMN7R0-30YL,11512 WeeksTinSurface MountSurface MountSC-100, SOT-6694453.59237mgSILICON-55°C~175°C TJTape & Reel (TR)2011e3Active1 (Unlimited)4EAR997MOhmMOSFET (Metal Oxide)SINGLEGULL WING2603041SINGLE WITH BUILT-IN DIODE151W TcENHANCEMENT MODE51WDRAIN24 nsN-ChannelSWITCHING7m Ω @ 15A, 10V2.15V @ 1mA1270pF @ 12V76A Tc22nC @ 10V39ns4.5V 10V±20V11 ns30 ns76AMO-23520V30V65A30V260A175°C1.2mm6.35mm6.35mmNoROHS3 CompliantLead Free--------------
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26 Weeks--Surface MountSOT-1210, 8-LFPAK338-SILICON-55°C~175°C TJTape & Reel (TR)2012e3Active1 (Unlimited)4--MOSFET (Metal Oxide)SINGLEGULL WING--81SINGLE WITH BUILT-IN DIODE-91W TcENHANCEMENT MODE91WDRAIN17.7 nsN-ChannelSWITCHING2.9m Ω @ 25A, 10V2.15V @ 1mA2419pF @ 15V70A Tc36.1nC @ 10V30.8ns4.5V 10V±20V19.3 ns24.6 ns70A-20V30V--523A----NoROHS3 Compliant-YESTin (Sn)R-PSSO-G475 mJ---------
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12 Weeks-Surface MountSurface MountSC-100, SOT-669--SILICON-55°C~175°C TJTape & Reel (TR)2016-Active1 (Unlimited)4--MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIED41SINGLE WITH BUILT-IN DIODE-147W TcENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING14m Ω @ 15A, 10V2.1V @ 1mA4640pF @ 25V62A Tc28.9nC @ 5V-5V 10V±20V--62AMO-235----250A-----ROHS3 Compliant---R-PSSO-G479.6 mJAVALANCHE RATEDIEC-6013480V0.015Ohm80V----
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---Through HoleTO-247-3--SILICON-55°C~175°C TJTube1999e3Obsolete1 (Unlimited)3EAR99-MOSFET (Metal Oxide)SINGLE-NOT SPECIFIEDNOT SPECIFIED31SINGLE WITH BUILT-IN DIODE-300W TcENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING20m Ω @ 25A, 10V4V @ 1mA9537pF @ 25V73A Tc227nC @ 10V-10V±20V------73A-290A-----ROHS3 Compliant-NOMatte Tin (Sn)R-PSFM-T3707 mJ--150V0.02Ohm150VTrenchMOS™FET General Purpose PowerunknownNot Qualified
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