Nexperia USA Inc. PSMN4R0-30YLDX
- Part Number:
- PSMN4R0-30YLDX
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3585995-PSMN4R0-30YLDX
- Description:
- MOSFET N-CH 30V 95A LFPAK
- Datasheet:
- PSMN4R0-30YLDX
Nexperia USA Inc. PSMN4R0-30YLDX technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PSMN4R0-30YLDX.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / CaseSC-100, SOT-669
- Surface MountYES
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchMOS™
- Published2013
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Pin Count4
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max64W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time10.7 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id2.2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds1272pF @ 15V
- Current - Continuous Drain (Id) @ 25°C95A Tc
- Gate Charge (Qg) (Max) @ Vgs19.4nC @ 10V
- Rise Time21.2ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)11.7 ns
- Turn-Off Delay Time14.9 ns
- Continuous Drain Current (ID)95A
- JEDEC-95 CodeMO-235
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage30V
- Drain-source On Resistance-Max0.0055Ohm
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)378A
- Avalanche Energy Rating (Eas)63 mJ
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
PSMN4R0-30YLDX Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 63 mJ.A device's maximum input capacitance is 1272pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 95A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 14.9 ns.Its maximum pulsed drain current is 378A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10.7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 30V, it supports maximum dual supply voltages.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
PSMN4R0-30YLDX Features
the avalanche energy rating (Eas) is 63 mJ
a continuous drain current (ID) of 95A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 14.9 ns
based on its rated peak drain current 378A.
PSMN4R0-30YLDX Applications
There are a lot of Nexperia USA Inc.
PSMN4R0-30YLDX applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 63 mJ.A device's maximum input capacitance is 1272pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 95A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 14.9 ns.Its maximum pulsed drain current is 378A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10.7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 30V, it supports maximum dual supply voltages.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
PSMN4R0-30YLDX Features
the avalanche energy rating (Eas) is 63 mJ
a continuous drain current (ID) of 95A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 14.9 ns
based on its rated peak drain current 378A.
PSMN4R0-30YLDX Applications
There are a lot of Nexperia USA Inc.
PSMN4R0-30YLDX applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
PSMN4R0-30YLDX More Descriptions
Power Field-Effect Transistor, 95A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
N-Channel 30 V 4 mOhm 95 A Surface Mount Logic Level MOSFET - LFPAK-56
PSMN4R0-30YLD - N-channel 30 V, 4.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology
MOSFET, N CH, 30V, 95A, SOT-669-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 95A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0034ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.74V; Power Dissipation Pd: 64W; Transistor Case Style: SOT-669; No. of Pins: 4Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
N-Channel 30 V 4 mOhm 95 A Surface Mount Logic Level MOSFET - LFPAK-56
PSMN4R0-30YLD - N-channel 30 V, 4.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology
MOSFET, N CH, 30V, 95A, SOT-669-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 95A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0034ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.74V; Power Dissipation Pd: 64W; Transistor Case Style: SOT-669; No. of Pins: 4Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
The three parts on the right have similar specifications to PSMN4R0-30YLDX.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyTerminal PositionTerminal FormPin CountNumber of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Radiation HardeningRoHS StatusJESD-609 CodeTerminal FinishJESD-30 CodePower DissipationMountAdditional FeaturePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Reference StandardDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinResistanceLead FreeView Compare
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PSMN4R0-30YLDX12 WeeksSurface MountSC-100, SOT-669YES4SILICON-55°C~175°C TJTape & Reel (TR)TrenchMOS™2013Active1 (Unlimited)4MOSFET (Metal Oxide)SINGLEGULL WING41SINGLE WITH BUILT-IN DIODE164W TcENHANCEMENT MODEDRAIN10.7 nsN-ChannelSWITCHING4m Ω @ 25A, 10V2.2V @ 1mA1272pF @ 15V95A Tc19.4nC @ 10V21.2ns4.5V 10V±20V11.7 ns14.9 ns95AMO-23520V30V0.0055Ohm30V378A63 mJNoROHS3 Compliant--------------
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26 WeeksSurface MountSOT-1210, 8-LFPAK33YES8SILICON-55°C~175°C TJTape & Reel (TR)-2012Active1 (Unlimited)4MOSFET (Metal Oxide)SINGLEGULL WING81SINGLE WITH BUILT-IN DIODE-91W TcENHANCEMENT MODEDRAIN17.7 nsN-ChannelSWITCHING2.9m Ω @ 25A, 10V2.15V @ 1mA2419pF @ 15V70A Tc36.1nC @ 10V30.8ns4.5V 10V±20V19.3 ns24.6 ns70A-20V30V--523A75 mJNoROHS3 Compliante3Tin (Sn)R-PSSO-G491W---------
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12 WeeksSurface MountSC-100, SOT-669--SILICON-55°C~175°C TJTape & Reel (TR)-2016Active1 (Unlimited)4MOSFET (Metal Oxide)SINGLEGULL WING41SINGLE WITH BUILT-IN DIODE-147W TcENHANCEMENT MODEDRAIN-N-ChannelSWITCHING14m Ω @ 15A, 10V2.1V @ 1mA4640pF @ 25V62A Tc28.9nC @ 5V-5V 10V±20V--62AMO-235--0.015Ohm-250A79.6 mJ-ROHS3 Compliant--R-PSSO-G4-Surface MountAVALANCHE RATEDNOT SPECIFIEDNOT SPECIFIEDIEC-6013480V80V--
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12 WeeksSurface MountSC-100, SOT-669YES4SILICON-55°C~175°C TJTape & Reel (TR)-2011Active1 (Unlimited)4MOSFET (Metal Oxide)SINGLEGULL WING41SINGLE WITH BUILT-IN DIODE-106W TcENHANCEMENT MODEDRAIN24 nsN-ChannelSWITCHING2.4m Ω @ 25A, 10V1.95V @ 1mA2542pF @ 12V100A Tc39nC @ 10V34ns4.5V 10V±20V16 ns36 ns100AMO-23520V25V-25V636A60 mJNoROHS3 Compliante3Tin (Sn)-106W-HIGH RELIABILITY-----3.15MOhmLead Free
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