PSMN4R0-30YLDX

Nexperia USA Inc. PSMN4R0-30YLDX

Part Number:
PSMN4R0-30YLDX
Manufacturer:
Nexperia USA Inc.
Ventron No:
3585995-PSMN4R0-30YLDX
Description:
MOSFET N-CH 30V 95A LFPAK
ECAD Model:
Datasheet:
PSMN4R0-30YLDX

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Specifications
Nexperia USA Inc. PSMN4R0-30YLDX technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PSMN4R0-30YLDX.
  • Factory Lead Time
    12 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-100, SOT-669
  • Surface Mount
    YES
  • Number of Pins
    4
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchMOS™
  • Published
    2013
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Pin Count
    4
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    64W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    10.7 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4m Ω @ 25A, 10V
  • Vgs(th) (Max) @ Id
    2.2V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    1272pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    95A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    19.4nC @ 10V
  • Rise Time
    21.2ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    11.7 ns
  • Turn-Off Delay Time
    14.9 ns
  • Continuous Drain Current (ID)
    95A
  • JEDEC-95 Code
    MO-235
  • Gate to Source Voltage (Vgs)
    20V
  • Max Dual Supply Voltage
    30V
  • Drain-source On Resistance-Max
    0.0055Ohm
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    378A
  • Avalanche Energy Rating (Eas)
    63 mJ
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
PSMN4R0-30YLDX Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 63 mJ.A device's maximum input capacitance is 1272pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 95A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 14.9 ns.Its maximum pulsed drain current is 378A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10.7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 30V, it supports maximum dual supply voltages.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

PSMN4R0-30YLDX Features
the avalanche energy rating (Eas) is 63 mJ
a continuous drain current (ID) of 95A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 14.9 ns
based on its rated peak drain current 378A.


PSMN4R0-30YLDX Applications
There are a lot of Nexperia USA Inc.
PSMN4R0-30YLDX applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
PSMN4R0-30YLDX More Descriptions
Power Field-Effect Transistor, 95A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
N-Channel 30 V 4 mOhm 95 A Surface Mount Logic Level MOSFET - LFPAK-56
PSMN4R0-30YLD - N-channel 30 V, 4.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology
MOSFET, N CH, 30V, 95A, SOT-669-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 95A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0034ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.74V; Power Dissipation Pd: 64W; Transistor Case Style: SOT-669; No. of Pins: 4Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Product Comparison
The three parts on the right have similar specifications to PSMN4R0-30YLDX.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Technology
    Terminal Position
    Terminal Form
    Pin Count
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Radiation Hardening
    RoHS Status
    JESD-609 Code
    Terminal Finish
    JESD-30 Code
    Power Dissipation
    Mount
    Additional Feature
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Reference Standard
    Drain to Source Voltage (Vdss)
    DS Breakdown Voltage-Min
    Resistance
    Lead Free
    View Compare
  • PSMN4R0-30YLDX
    PSMN4R0-30YLDX
    12 Weeks
    Surface Mount
    SC-100, SOT-669
    YES
    4
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    TrenchMOS™
    2013
    Active
    1 (Unlimited)
    4
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    4
    1
    SINGLE WITH BUILT-IN DIODE
    1
    64W Tc
    ENHANCEMENT MODE
    DRAIN
    10.7 ns
    N-Channel
    SWITCHING
    4m Ω @ 25A, 10V
    2.2V @ 1mA
    1272pF @ 15V
    95A Tc
    19.4nC @ 10V
    21.2ns
    4.5V 10V
    ±20V
    11.7 ns
    14.9 ns
    95A
    MO-235
    20V
    30V
    0.0055Ohm
    30V
    378A
    63 mJ
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PSMN2R9-30MLC,115
    26 Weeks
    Surface Mount
    SOT-1210, 8-LFPAK33
    YES
    8
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    -
    2012
    Active
    1 (Unlimited)
    4
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    8
    1
    SINGLE WITH BUILT-IN DIODE
    -
    91W Tc
    ENHANCEMENT MODE
    DRAIN
    17.7 ns
    N-Channel
    SWITCHING
    2.9m Ω @ 25A, 10V
    2.15V @ 1mA
    2419pF @ 15V
    70A Tc
    36.1nC @ 10V
    30.8ns
    4.5V 10V
    ±20V
    19.3 ns
    24.6 ns
    70A
    -
    20V
    30V
    -
    -
    523A
    75 mJ
    No
    ROHS3 Compliant
    e3
    Tin (Sn)
    R-PSSO-G4
    91W
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PSMN014-80YLX
    12 Weeks
    Surface Mount
    SC-100, SOT-669
    -
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    -
    2016
    Active
    1 (Unlimited)
    4
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    4
    1
    SINGLE WITH BUILT-IN DIODE
    -
    147W Tc
    ENHANCEMENT MODE
    DRAIN
    -
    N-Channel
    SWITCHING
    14m Ω @ 15A, 10V
    2.1V @ 1mA
    4640pF @ 25V
    62A Tc
    28.9nC @ 5V
    -
    5V 10V
    ±20V
    -
    -
    62A
    MO-235
    -
    -
    0.015Ohm
    -
    250A
    79.6 mJ
    -
    ROHS3 Compliant
    -
    -
    R-PSSO-G4
    -
    Surface Mount
    AVALANCHE RATED
    NOT SPECIFIED
    NOT SPECIFIED
    IEC-60134
    80V
    80V
    -
    -
  • PSMN2R2-25YLC,115
    12 Weeks
    Surface Mount
    SC-100, SOT-669
    YES
    4
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    -
    2011
    Active
    1 (Unlimited)
    4
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    4
    1
    SINGLE WITH BUILT-IN DIODE
    -
    106W Tc
    ENHANCEMENT MODE
    DRAIN
    24 ns
    N-Channel
    SWITCHING
    2.4m Ω @ 25A, 10V
    1.95V @ 1mA
    2542pF @ 12V
    100A Tc
    39nC @ 10V
    34ns
    4.5V 10V
    ±20V
    16 ns
    36 ns
    100A
    MO-235
    20V
    25V
    -
    25V
    636A
    60 mJ
    No
    ROHS3 Compliant
    e3
    Tin (Sn)
    -
    106W
    -
    HIGH RELIABILITY
    -
    -
    -
    -
    -
    3.15MOhm
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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