Nexperia USA Inc. PSMN3R5-30YL,115
- Part Number:
- PSMN3R5-30YL,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2478643-PSMN3R5-30YL,115
- Description:
- MOSFET N-CH 30V 100A LFPAK
- Datasheet:
- PSMN3R5-30YL,115
Nexperia USA Inc. PSMN3R5-30YL,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PSMN3R5-30YL,115.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / CaseSC-100, SOT-669
- Surface MountYES
- Number of Pins4
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count4
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max74W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation74W
- Case ConnectionDRAIN
- Turn On Delay Time33 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3.5m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id2.15V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds2458pF @ 12V
- Current - Continuous Drain (Id) @ 25°C100A Tc
- Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
- Rise Time50ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)18 ns
- Turn-Off Delay Time45 ns
- Continuous Drain Current (ID)100A
- JEDEC-95 CodeMO-235
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage30V
- Drain-source On Resistance-Max0.0056Ohm
- Drain to Source Breakdown Voltage30V
- Height6.35mm
- Length6.35mm
- Width6.35mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PSMN3R5-30YL,115 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2458pF @ 12V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 45 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 33 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 30V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
PSMN3R5-30YL,115 Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 45 ns
PSMN3R5-30YL,115 Applications
There are a lot of Nexperia USA Inc.
PSMN3R5-30YL,115 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2458pF @ 12V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 45 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 33 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 30V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
PSMN3R5-30YL,115 Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 45 ns
PSMN3R5-30YL,115 Applications
There are a lot of Nexperia USA Inc.
PSMN3R5-30YL,115 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
PSMN3R5-30YL,115 More Descriptions
In a Pack of 25, PSMN3R5-30YL, 115 N-Channel MOSFET, 100 A, 30 V, 4 Tab-Pin LFPAK Nexperia
PSMN3R5-30YL - N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK
Transistor MOSFET N-Channel 30V 100A 4-Pin SOT-669
MOSFET, N CH, 30V, 100A, 4-SOT-669; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.43mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V ;RoHS Compliant: Yes
PSMN3R5-30YL - N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK
Transistor MOSFET N-Channel 30V 100A 4-Pin SOT-669
MOSFET, N CH, 30V, 100A, 4-SOT-669; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.43mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V ;RoHS Compliant: Yes
The three parts on the right have similar specifications to PSMN3R5-30YL,115.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxDrain to Source Breakdown VoltageHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSubcategoryReach Compliance CodeDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Source Url Status Check DateSeriesHTS CodeJESD-30 CodeQualification StatusPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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PSMN3R5-30YL,11512 WeeksSurface MountSC-100, SOT-669YES44.535924gSILICON-55°C~175°C TJTape & Reel (TR)2011e3Active1 (Unlimited)4EAR99Tin (Sn)MOSFET (Metal Oxide)SINGLEGULL WING2603041SINGLE WITH BUILT-IN DIODE74W TcENHANCEMENT MODE74WDRAIN33 nsN-ChannelSWITCHING3.5m Ω @ 15A, 10V2.15V @ 1mA2458pF @ 12V100A Tc41nC @ 10V50ns4.5V 10V±20V18 ns45 ns100AMO-23520V30V0.0056Ohm30V6.35mm6.35mm6.35mmNoROHS3 CompliantLead Free-------------
-
-Through HoleTO-220-3 Full Pack, Isolated TabNO----55°C~175°C TJTube2012-Obsolete1 (Unlimited)---MOSFET (Metal Oxide)----3-Single48.4W TcENHANCEMENT MODE---N-Channel-13.9m Ω @ 10A, 10V4V @ 1mA3195pF @ 50V35.2A Tc57.5nC @ 10V-10V±20V------------ROHS3 Compliant-FET General Purpose Powernot_compliant100V35.2A2013-06-14 00:00:00-------
-
12 WeeksSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYES--SILICON-55°C~175°C TJTape & Reel (TR)2001e3Active1 (Unlimited)2EAR99Tin (Sn)MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIED31SINGLE WITH BUILT-IN DIODE230W TcENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING5m Ω @ 25A, 10V4V @ 1mA8250pF @ 25V75A Tc165nC @ 10V-10V±20V------0.005Ohm-----ROHS3 Compliant--not_compliant75V75A-TrenchMOS™8541.29.00.75R-PSSO-G2Not Qualified400A75V500 mJ
-
-Through HoleTO-247-3NO--SILICON-55°C~175°C TJTube1999e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)MOSFET (Metal Oxide)SINGLE-NOT SPECIFIEDNOT SPECIFIED31SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING20m Ω @ 25A, 10V4V @ 1mA9537pF @ 25V73A Tc227nC @ 10V-10V±20V------0.02Ohm-----ROHS3 Compliant-FET General Purpose Powerunknown150V73A-TrenchMOS™-R-PSFM-T3Not Qualified290A150V707 mJ
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