PSMN3R5-30YL,115

Nexperia USA Inc. PSMN3R5-30YL,115

Part Number:
PSMN3R5-30YL,115
Manufacturer:
Nexperia USA Inc.
Ventron No:
2478643-PSMN3R5-30YL,115
Description:
MOSFET N-CH 30V 100A LFPAK
ECAD Model:
Datasheet:
PSMN3R5-30YL,115

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Comments
Specifications
Nexperia USA Inc. PSMN3R5-30YL,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PSMN3R5-30YL,115.
  • Factory Lead Time
    12 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-100, SOT-669
  • Surface Mount
    YES
  • Number of Pins
    4
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    4
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    74W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    74W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    33 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3.5m Ω @ 15A, 10V
  • Vgs(th) (Max) @ Id
    2.15V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    2458pF @ 12V
  • Current - Continuous Drain (Id) @ 25°C
    100A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    41nC @ 10V
  • Rise Time
    50ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    18 ns
  • Turn-Off Delay Time
    45 ns
  • Continuous Drain Current (ID)
    100A
  • JEDEC-95 Code
    MO-235
  • Gate to Source Voltage (Vgs)
    20V
  • Max Dual Supply Voltage
    30V
  • Drain-source On Resistance-Max
    0.0056Ohm
  • Drain to Source Breakdown Voltage
    30V
  • Height
    6.35mm
  • Length
    6.35mm
  • Width
    6.35mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
PSMN3R5-30YL,115 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2458pF @ 12V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 45 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 33 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 30V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

PSMN3R5-30YL,115 Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 45 ns


PSMN3R5-30YL,115 Applications
There are a lot of Nexperia USA Inc.
PSMN3R5-30YL,115 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
PSMN3R5-30YL,115 More Descriptions
In a Pack of 25, PSMN3R5-30YL, 115 N-Channel MOSFET, 100 A, 30 V, 4 Tab-Pin LFPAK Nexperia
PSMN3R5-30YL - N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK
Transistor MOSFET N-Channel 30V 100A 4-Pin SOT-669
MOSFET, N CH, 30V, 100A, 4-SOT-669; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.43mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to PSMN3R5-30YL,115.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Subcategory
    Reach Compliance Code
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Source Url Status Check Date
    Series
    HTS Code
    JESD-30 Code
    Qualification Status
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • PSMN3R5-30YL,115
    PSMN3R5-30YL,115
    12 Weeks
    Surface Mount
    SC-100, SOT-669
    YES
    4
    4.535924g
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2011
    e3
    Active
    1 (Unlimited)
    4
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    30
    4
    1
    SINGLE WITH BUILT-IN DIODE
    74W Tc
    ENHANCEMENT MODE
    74W
    DRAIN
    33 ns
    N-Channel
    SWITCHING
    3.5m Ω @ 15A, 10V
    2.15V @ 1mA
    2458pF @ 12V
    100A Tc
    41nC @ 10V
    50ns
    4.5V 10V
    ±20V
    18 ns
    45 ns
    100A
    MO-235
    20V
    30V
    0.0056Ohm
    30V
    6.35mm
    6.35mm
    6.35mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PSMN013-100XS,127
    -
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    NO
    -
    -
    -
    -55°C~175°C TJ
    Tube
    2012
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    3
    -
    Single
    48.4W Tc
    ENHANCEMENT MODE
    -
    -
    -
    N-Channel
    -
    13.9m Ω @ 10A, 10V
    4V @ 1mA
    3195pF @ 50V
    35.2A Tc
    57.5nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    FET General Purpose Power
    not_compliant
    100V
    35.2A
    2013-06-14 00:00:00
    -
    -
    -
    -
    -
    -
    -
  • PSMN005-75B,118
    12 Weeks
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    -
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2001
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    3
    1
    SINGLE WITH BUILT-IN DIODE
    230W Tc
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    5m Ω @ 25A, 10V
    4V @ 1mA
    8250pF @ 25V
    75A Tc
    165nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    0.005Ohm
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    not_compliant
    75V
    75A
    -
    TrenchMOS™
    8541.29.00.75
    R-PSSO-G2
    Not Qualified
    400A
    75V
    500 mJ
  • PSMN020-150W,127
    -
    Through Hole
    TO-247-3
    NO
    -
    -
    SILICON
    -55°C~175°C TJ
    Tube
    1999
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    SINGLE
    -
    NOT SPECIFIED
    NOT SPECIFIED
    3
    1
    SINGLE WITH BUILT-IN DIODE
    300W Tc
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    20m Ω @ 25A, 10V
    4V @ 1mA
    9537pF @ 25V
    73A Tc
    227nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    0.02Ohm
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    FET General Purpose Power
    unknown
    150V
    73A
    -
    TrenchMOS™
    -
    R-PSFM-T3
    Not Qualified
    290A
    150V
    707 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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