PSMN1R2-25YL,115

Nexperia USA Inc. PSMN1R2-25YL,115

Part Number:
PSMN1R2-25YL,115
Manufacturer:
Nexperia USA Inc.
Ventron No:
2848480-PSMN1R2-25YL,115
Description:
MOSFET N-CH 25V 100A LFPAK
ECAD Model:
Datasheet:
PSMN1R2-25YL,115

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Specifications
Nexperia USA Inc. PSMN1R2-25YL,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PSMN1R2-25YL,115.
  • Factory Lead Time
    12 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-1023, 4-LFPAK
  • Surface Mount
    YES
  • Number of Pins
    4
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Digi-Reel®
  • Published
    2014
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Resistance
    1.2MOhm
  • Terminal Finish
    Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Pin Count
    4
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    121W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    121W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    69 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.2m Ω @ 15A, 10V
  • Vgs(th) (Max) @ Id
    2.15V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    6380pF @ 12V
  • Current - Continuous Drain (Id) @ 25°C
    100A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    105nC @ 10V
  • Rise Time
    125ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    56 ns
  • Turn-Off Delay Time
    94 ns
  • Continuous Drain Current (ID)
    100A
  • Threshold Voltage
    1.7V
  • Gate to Source Voltage (Vgs)
    20V
  • Max Dual Supply Voltage
    25V
  • Drain to Source Breakdown Voltage
    25V
  • Pulsed Drain Current-Max (IDM)
    815A
  • Avalanche Energy Rating (Eas)
    677 mJ
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
PSMN1R2-25YL,115 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 677 mJ.A device's maximum input capacitance is 6380pF @ 12V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 100A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=25V, and this device has a drain-to-source breakdown voltage of 25V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 94 ns.Its maximum pulsed drain current is 815A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 69 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 25V, it supports maximum dual supply voltages.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1.7V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

PSMN1R2-25YL,115 Features
the avalanche energy rating (Eas) is 677 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 94 ns
based on its rated peak drain current 815A.
a threshold voltage of 1.7V


PSMN1R2-25YL,115 Applications
There are a lot of Nexperia USA Inc.
PSMN1R2-25YL,115 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
PSMN1R2-25YL,115 More Descriptions
PSMN1R2-25YL - N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK
PSMN1R2 Series 25V 1.2 mOhm 121 W 105 nC N-Channel Logic Level MOSFET - LFPAK
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:25V; On Resistance Rds(on):900µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:121W ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to PSMN1R2-25YL,115.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Pin Count
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    JESD-30 Code
    Mount
    Additional Feature
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Reference Standard
    JEDEC-95 Code
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    View Compare
  • PSMN1R2-25YL,115
    PSMN1R2-25YL,115
    12 Weeks
    Surface Mount
    SOT-1023, 4-LFPAK
    YES
    4
    SILICON
    -55°C~150°C TJ
    Digi-Reel®
    2014
    e3
    Active
    1 (Unlimited)
    4
    EAR99
    1.2MOhm
    Tin (Sn)
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    4
    1
    SINGLE WITH BUILT-IN DIODE
    121W Tc
    ENHANCEMENT MODE
    121W
    DRAIN
    69 ns
    N-Channel
    SWITCHING
    1.2m Ω @ 15A, 10V
    2.15V @ 1mA
    6380pF @ 12V
    100A Tc
    105nC @ 10V
    125ns
    4.5V 10V
    ±20V
    56 ns
    94 ns
    100A
    1.7V
    20V
    25V
    25V
    815A
    677 mJ
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PSMN1R7-25YLC,115
    -
    Surface Mount
    SC-100, SOT-669
    -
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    164W Tc
    -
    -
    -
    -
    N-Channel
    -
    1.9mOhm @ 25A, 10V
    1.95V @ 1mA
    3.735pF @ 12V
    100A Tc
    59nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    LFPAK56, Power-SO8
    25V
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PSMN2R9-30MLC,115
    26 Weeks
    Surface Mount
    SOT-1210, 8-LFPAK33
    YES
    8
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2012
    e3
    Active
    1 (Unlimited)
    4
    -
    -
    Tin (Sn)
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    8
    1
    SINGLE WITH BUILT-IN DIODE
    91W Tc
    ENHANCEMENT MODE
    91W
    DRAIN
    17.7 ns
    N-Channel
    SWITCHING
    2.9m Ω @ 25A, 10V
    2.15V @ 1mA
    2419pF @ 15V
    70A Tc
    36.1nC @ 10V
    30.8ns
    4.5V 10V
    ±20V
    19.3 ns
    24.6 ns
    70A
    -
    20V
    30V
    -
    523A
    75 mJ
    -
    No
    ROHS3 Compliant
    -
    -
    -
    R-PSSO-G4
    -
    -
    -
    -
    -
    -
    -
    -
  • PSMN014-80YLX
    12 Weeks
    Surface Mount
    SC-100, SOT-669
    -
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2016
    -
    Active
    1 (Unlimited)
    4
    -
    -
    -
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    4
    1
    SINGLE WITH BUILT-IN DIODE
    147W Tc
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    14m Ω @ 15A, 10V
    2.1V @ 1mA
    4640pF @ 25V
    62A Tc
    28.9nC @ 5V
    -
    5V 10V
    ±20V
    -
    -
    62A
    -
    -
    -
    -
    250A
    79.6 mJ
    -
    -
    ROHS3 Compliant
    -
    -
    80V
    R-PSSO-G4
    Surface Mount
    AVALANCHE RATED
    NOT SPECIFIED
    NOT SPECIFIED
    IEC-60134
    MO-235
    0.015Ohm
    80V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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