Nexperia USA Inc. PSMN1R2-25YL,115
- Part Number:
- PSMN1R2-25YL,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2848480-PSMN1R2-25YL,115
- Description:
- MOSFET N-CH 25V 100A LFPAK
- Datasheet:
- PSMN1R2-25YL,115
Nexperia USA Inc. PSMN1R2-25YL,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PSMN1R2-25YL,115.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / CaseSOT-1023, 4-LFPAK
- Surface MountYES
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingDigi-Reel®
- Published2014
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Resistance1.2MOhm
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Pin Count4
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max121W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation121W
- Case ConnectionDRAIN
- Turn On Delay Time69 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.2m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id2.15V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds6380pF @ 12V
- Current - Continuous Drain (Id) @ 25°C100A Tc
- Gate Charge (Qg) (Max) @ Vgs105nC @ 10V
- Rise Time125ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)56 ns
- Turn-Off Delay Time94 ns
- Continuous Drain Current (ID)100A
- Threshold Voltage1.7V
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage25V
- Drain to Source Breakdown Voltage25V
- Pulsed Drain Current-Max (IDM)815A
- Avalanche Energy Rating (Eas)677 mJ
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PSMN1R2-25YL,115 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 677 mJ.A device's maximum input capacitance is 6380pF @ 12V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 100A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=25V, and this device has a drain-to-source breakdown voltage of 25V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 94 ns.Its maximum pulsed drain current is 815A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 69 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 25V, it supports maximum dual supply voltages.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1.7V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
PSMN1R2-25YL,115 Features
the avalanche energy rating (Eas) is 677 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 94 ns
based on its rated peak drain current 815A.
a threshold voltage of 1.7V
PSMN1R2-25YL,115 Applications
There are a lot of Nexperia USA Inc.
PSMN1R2-25YL,115 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 677 mJ.A device's maximum input capacitance is 6380pF @ 12V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 100A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=25V, and this device has a drain-to-source breakdown voltage of 25V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 94 ns.Its maximum pulsed drain current is 815A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 69 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 25V, it supports maximum dual supply voltages.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1.7V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
PSMN1R2-25YL,115 Features
the avalanche energy rating (Eas) is 677 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 94 ns
based on its rated peak drain current 815A.
a threshold voltage of 1.7V
PSMN1R2-25YL,115 Applications
There are a lot of Nexperia USA Inc.
PSMN1R2-25YL,115 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
PSMN1R2-25YL,115 More Descriptions
PSMN1R2-25YL - N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK
PSMN1R2 Series 25V 1.2 mOhm 121 W 105 nC N-Channel Logic Level MOSFET - LFPAK
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:25V; On Resistance Rds(on):900µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:121W ;RoHS Compliant: Yes
PSMN1R2 Series 25V 1.2 mOhm 121 W 105 nC N-Channel Logic Level MOSFET - LFPAK
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:25V; On Resistance Rds(on):900µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:121W ;RoHS Compliant: Yes
The three parts on the right have similar specifications to PSMN1R2-25YL,115.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishTechnologyTerminal PositionTerminal FormPin CountNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Max Dual Supply VoltageDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)REACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageDrain to Source Voltage (Vdss)JESD-30 CodeMountAdditional FeaturePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Reference StandardJEDEC-95 CodeDrain-source On Resistance-MaxDS Breakdown Voltage-MinView Compare
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PSMN1R2-25YL,11512 WeeksSurface MountSOT-1023, 4-LFPAKYES4SILICON-55°C~150°C TJDigi-Reel®2014e3Active1 (Unlimited)4EAR991.2MOhmTin (Sn)MOSFET (Metal Oxide)SINGLEGULL WING41SINGLE WITH BUILT-IN DIODE121W TcENHANCEMENT MODE121WDRAIN69 nsN-ChannelSWITCHING1.2m Ω @ 15A, 10V2.15V @ 1mA6380pF @ 12V100A Tc105nC @ 10V125ns4.5V 10V±20V56 ns94 ns100A1.7V20V25V25V815A677 mJNo SVHCNoROHS3 CompliantLead Free------------
-
-Surface MountSC-100, SOT-669----55°C~175°C TJTape & Reel (TR)--Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-----164W Tc----N-Channel-1.9mOhm @ 25A, 10V1.95V @ 1mA3.735pF @ 12V100A Tc59nC @ 10V-4.5V 10V±20V-----------ROHS3 Compliant-LFPAK56, Power-SO825V---------
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26 WeeksSurface MountSOT-1210, 8-LFPAK33YES8SILICON-55°C~175°C TJTape & Reel (TR)2012e3Active1 (Unlimited)4--Tin (Sn)MOSFET (Metal Oxide)SINGLEGULL WING81SINGLE WITH BUILT-IN DIODE91W TcENHANCEMENT MODE91WDRAIN17.7 nsN-ChannelSWITCHING2.9m Ω @ 25A, 10V2.15V @ 1mA2419pF @ 15V70A Tc36.1nC @ 10V30.8ns4.5V 10V±20V19.3 ns24.6 ns70A-20V30V-523A75 mJ-NoROHS3 Compliant---R-PSSO-G4--------
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12 WeeksSurface MountSC-100, SOT-669--SILICON-55°C~175°C TJTape & Reel (TR)2016-Active1 (Unlimited)4---MOSFET (Metal Oxide)SINGLEGULL WING41SINGLE WITH BUILT-IN DIODE147W TcENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING14m Ω @ 15A, 10V2.1V @ 1mA4640pF @ 25V62A Tc28.9nC @ 5V-5V 10V±20V--62A----250A79.6 mJ--ROHS3 Compliant--80VR-PSSO-G4Surface MountAVALANCHE RATEDNOT SPECIFIEDNOT SPECIFIEDIEC-60134MO-2350.015Ohm80V
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