Nexperia USA Inc. PSMN026-80YS,115

Name: PSMN026-80YS,115
Brand: Nexperia USA Inc.
SKU: 2478618-PSMN026-80YS,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: PSMN026-80YS,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2478618-PSMN026-80YS,115

Description:: MOSFET N-CH 80V 34A LFPAK

ECAD Model:

Datasheet:: PSMN026-80YS,115

Specifications

Nexperia USA Inc. PSMN026-80YS,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PSMN026-80YS,115.

Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Surface Mount
YES
Number of Pins
4
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Digi-Reel®
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Resistance
27.5MOhm
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
4
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
74W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
74W
Case Connection
DRAIN
Turn On Delay Time
15 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
27.5m Ω @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
1200pF @ 40V
Current - Continuous Drain (Id) @ 25°C
34A Tc
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Rise Time
6ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
5 ns
Turn-Off Delay Time
26 ns
Continuous Drain Current (ID)
34A
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
80V
Drain to Source Breakdown Voltage
80V
Avalanche Energy Rating (Eas)
32 mJ
Height
6.35mm
Length
6.35mm
Width
6.35mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

PSMN026-80YS,115 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 32 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1200pF @ 40V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 34A.With a drain-source breakdown voltage of 80V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 80V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 26 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 15 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 80V.Using drive voltage (10V) reduces this device's overall power consumption.

PSMN026-80YS,115 Features
the avalanche energy rating (Eas) is 32 mJ
a continuous drain current (ID) of 34A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 26 ns

PSMN026-80YS,115 Applications
There are a lot of Nexperia USA Inc.
PSMN026-80YS,115 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

PSMN026-80YS,115 More Descriptions

Transistor MOSFET N-CH 80V 34A 5-Pin (4 Tab) LFPAK T/R
PSMN026-80YS - N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET
Power Field-Effect Transistor, 34A I(D), 80V, 0.0275ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235
MOSFET, N CH, 80V, 34A, SOT669; Transistor Polarity: N Channel; Continuous Drain Current Id: 34A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.02ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 74W; Transistor Case Style: SOT-669; No. of Pins: 4Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 34A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Voltage Vgs Max: 20V

Product Comparison

The three parts on the right have similar specifications to PSMN026-80YS,115.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

Mount

Max Operating Temperature

Min Operating Temperature

Input Capacitance

FET Feature

Drain to Source Resistance

Rds On Max

Additional Feature

JEDEC-95 Code

Pulsed Drain Current-Max (IDM)

View Compare
PSMN026-80YS,115

Nexperia USA Inc.

12 Weeks

Surface Mount

SC-100, SOT-669

YES

4

4.535924g

SILICON

-55°C~175°C TJ

Digi-Reel®

2009

e3

Active

1 (Unlimited)

4

EAR99

27.5MOhm

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

30

4

1

SINGLE WITH BUILT-IN DIODE

74W Tc

ENHANCEMENT MODE

74W

DRAIN

15 ns

N-Channel

SWITCHING

27.5m Ω @ 5A, 10V

4V @ 1mA

1200pF @ 40V

34A Tc

20nC @ 10V

6ns

10V

±20V

5 ns

26 ns

34A

20V

80V

80V

32 mJ

6.35mm

6.35mm

6.35mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
PSMN1R7-25YLC,115

NXP USA Inc.

-

Surface Mount

SC-100, SOT-669

-

-

-

-

-55°C~175°C TJ

Tape & Reel (TR)

-

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

164W Tc

-

-

-

-

N-Channel

-

1.9mOhm @ 25A, 10V

1.95V @ 1mA

3.735pF @ 12V

100A Tc

59nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

LFPAK56, Power-SO8

25V

-

-

-

-

-

-

-

-

-

-

PSMN026-80YS,115 vs PSMN1R7-25YLC,115
PSMN2R0-25YLDX

Nexperia USA Inc.

12 Weeks

Surface Mount

SC-100, SOT-669

-

5

-

-

-55°C~175°C TJ

Tape & Reel (TR)

2016

-

Active

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

115W Tc

-

-

-

-

N-Channel

-

2.09mOhm @ 25A, 10V

2.2V @ 1mA

2485pF @ 12V

100A Tc

34.1nC @ 10V

-

4.5V 10V

±20V

-

-

100A

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

LFPAK56, Power-SO8

25V

Surface Mount

175°C

-55°C

2.485nF

Schottky Diode (Body)

1.82mOhm

2.09 mΩ

-

-

-

PSMN026-80YS,115 vs PSMN2R0-25YLDX
PSMN2R2-25YLC,115

Nexperia USA Inc.

12 Weeks

Surface Mount

SC-100, SOT-669

YES

4

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

2011

e3

Active

1 (Unlimited)

4

-

3.15MOhm

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

GULL WING

-

-

4

1

SINGLE WITH BUILT-IN DIODE

106W Tc

ENHANCEMENT MODE

106W

DRAIN

24 ns

N-Channel

SWITCHING

2.4m Ω @ 25A, 10V

1.95V @ 1mA

2542pF @ 12V

100A Tc

39nC @ 10V

34ns

4.5V 10V

±20V

16 ns

36 ns

100A

20V

25V

25V

60 mJ

-

-

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

HIGH RELIABILITY

MO-235

636A

PSMN026-80YS,115 vs PSMN2R2-25YLC,115

Certification

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PSMN026-80YS,115 Specification

Part Number	Manufacturers	Description	Stock	Price
PSMN026-80YS,115 DISTI #V72:2272_06540803	Nexperia	PSMN026-80YS/SOT669/LFPAK	4500	1 $0.6934 10 $0.5709 25 $0.5061 100 $0.3184 250 $0.2864 500 $0.2579 1000 $0.2463 3000 $0.2217
PSMN026-80YS,115 DISTI #V36:1790_06540803	Nexperia	PSMN026-80YS/SOT669/LFPAK	0
PSMN026-80YS,115 DISTI #1727-4278-1-ND	Nexperia	MOSFET N-CH 80V 34A LFPAK RoHS: Compliant	1316	1 $0.65 10 $0.561 100 $0.4185 500 $0.32886
PSMN026-80YS,115 DISTI #1727-4278-6-ND	Nexperia	MOSFET N-CH 80V 34A LFPAK RoHS: Compliant	1316	1 $0.65 10 $0.561 100 $0.4185 500 $0.32886
PSMN026-80YS,115 DISTI #1727-4278-2-ND	Nexperia	MOSFET N-CH 80V 34A LFPAK RoHS: Compliant	0	1500 $0.24684 3000 $0.22506 7500 $0.21054 10500 $0.20328
PSMN026-80YS,115 DISTI #33635034	Nexperia	PSMN026-80YS/SOT669/LFPAK	4500	35 $0.4671 100 $0.3184 250 $0.2864 500 $0.2579 1000 $0.2463 3000 $0.2217
PSMN026-80YS,115 DISTI #PSMN026-80YS,115	Nexperia	Trans MOSFET N-CH 80V 34A 5-Pin(4 Tab) LFPAK T/R - RoHS: Compliant	0	1500 $0.1909 3000 $0.1879 6000 $0.1829 9000 $0.1789 15000 $0.1739
PSMN026-80YS,115 DISTI #62R9333	Nexperia	MOSFET Transistor, N Channel, 34 A, 80 V, 20 mohm,	625	1 $0.646 10 $0.53 25 $0.461 50 $0.392 100 $0.323 250 $0.299 500 $0.274 1000 $0.249
PSMN026-80YS,115. DISTI #26AC3081	Nexperia	MOSFET, N CH, 80V, 34A, 4-SOT-669, Transistor Pol	0	1 $0.191 3000 $0.188 6000 $0.183 9000 $0.179 15000 $0.174
PSMN026-80YS,115 DISTI #771-PSMN026-80YS,115	Nexperia	MOSFET N-CH 80V 27.5 mOhm Standard MOSFET RoHS: Compliant	5907	1 $0.64 10 $0.525 100 $0.32 1000 $0.247
PSMN026-80YS,115 DISTI #7982861P	Nexperia	TRENCH MOSFET N-CHANNEL 80V 34A SOT669, RL	30	50 $0.271 200 $0.239 500 $0.219
PSMN026-80YS.115 DISTI #PSMN026-80YS.115	Nexperia	Transistor: N-MOSFET, unipolar, 80V, 34A, 74W,	161	1 $0.63 5 $0.46 25 $0.36 100 $0.33 500 $0.31
PSMN026-80YS,115 DISTI #1785645	Nexperia	MOSFET, N CH, 80V, 34A, SOT669 RoHS: Compliant	625	1 $0.901 10 $0.777 25 $0.563 100 $0.47 250 $0.389 500 $0.364 1000 $0.349
PSMN026-80YS,115 DISTI #1785645RL	Nexperia	MOSFET, N CH, 80V, 34A, SOT669 RoHS: Compliant	0	1 $0.901 10 $0.777 25 $0.563 100 $0.47 250 $0.389 500 $0.364 1000 $0.349
PSMN026-80YS,115 DISTI #1785645	Nexperia	MOSFET, N CH, 80V, 34A, SOT669 RoHS: Compliant	930	5 $0.476 25 $0.442 100 $0.257 250 $0.237 500 $0.218

PSMN026~~(2)~~
PSMN02~~(22)~~
PSMN0~~(178)~~
PSMN~~(234)~~
PSM~~(513)~~

Nexperia USA Inc. PSMN026-80YS,115

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