PSMN022-30PL,127

Nexperia USA Inc. PSMN022-30PL,127

Part Number:
PSMN022-30PL,127
Manufacturer:
Nexperia USA Inc.
Ventron No:
2478883-PSMN022-30PL,127
Description:
MOSFET N-CH 30V TO220AB
ECAD Model:
Datasheet:
PSMN022-30PL,127

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Specifications
Nexperia USA Inc. PSMN022-30PL,127 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PSMN022-30PL,127.
  • Factory Lead Time
    12 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Weight
    453.59237mg
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2010
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    22MOhm
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Power Dissipation-Max
    41W Tc
  • Element Configuration
    Single
  • Power Dissipation
    41W
  • Turn On Delay Time
    12 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    22mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id
    2.15V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    447pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    30A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    9nC @ 10V
  • Rise Time
    29ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    7 ns
  • Turn-Off Delay Time
    17 ns
  • Continuous Drain Current (ID)
    30A
  • Gate to Source Voltage (Vgs)
    20V
  • Max Dual Supply Voltage
    30V
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance
    447pF
  • Drain to Source Resistance
    22mOhm
  • Rds On Max
    22 mΩ
  • Height
    6.35mm
  • Length
    6.35mm
  • Width
    6.35mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
PSMN022-30PL,127 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 447pF @ 15V.This device has a continuous drain current (ID) of [30A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 17 ns.MOSFETs have 22mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

PSMN022-30PL,127 Features
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 22mOhm
a 30V drain to source voltage (Vdss)


PSMN022-30PL,127 Applications
There are a lot of Nexperia USA Inc.
PSMN022-30PL,127 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
PSMN022-30PL,127 More Descriptions
MOSFET, N CH, 30V, 30A, 3-TO-220AB; Transistor Polarity:N Channel; Continuous Dr
PSMN022-30PL - N-channel 30 V 22 mΩ logic level MOSFET
Power Field-Effect Transistor, 30A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 30V 30A 3-Pin(3 Tab) TO-220AB Tube
NEXPERIA - PSMN022-30PL,127 - MOSFET, N CHANNEL, 30V, 30A, 3-TO-220AB
MOSFET, N CH, 30V, 30A, 3-TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):19mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V
Product Comparison
The three parts on the right have similar specifications to PSMN022-30PL,127.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Transistor Element Material
    Number of Terminations
    Additional Feature
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Reference Standard
    JESD-30 Code
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Surface Mount
    JESD-609 Code
    Terminal Finish
    Series
    ECCN Code
    Subcategory
    Reach Compliance Code
    Qualification Status
    Drain Current-Max (Abs) (ID)
    View Compare
  • PSMN022-30PL,127
    PSMN022-30PL,127
    12 Weeks
    Through Hole
    TO-220-3
    3
    TO-220AB
    453.59237mg
    -55°C~175°C TJ
    Tube
    2010
    Active
    1 (Unlimited)
    22MOhm
    175°C
    -55°C
    MOSFET (Metal Oxide)
    1
    41W Tc
    Single
    41W
    12 ns
    N-Channel
    22mOhm @ 5A, 10V
    2.15V @ 1mA
    447pF @ 15V
    30A Tc
    9nC @ 10V
    29ns
    30V
    4.5V 10V
    ±20V
    7 ns
    17 ns
    30A
    20V
    30V
    30V
    447pF
    22mOhm
    22 mΩ
    6.35mm
    6.35mm
    6.35mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PSMN014-80YLX
    12 Weeks
    Surface Mount
    SC-100, SOT-669
    -
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    2016
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    1
    147W Tc
    -
    -
    -
    N-Channel
    14m Ω @ 15A, 10V
    2.1V @ 1mA
    4640pF @ 25V
    62A Tc
    28.9nC @ 5V
    -
    80V
    5V 10V
    ±20V
    -
    -
    62A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Surface Mount
    SILICON
    4
    AVALANCHE RATED
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    4
    IEC-60134
    R-PSSO-G4
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    MO-235
    0.015Ohm
    250A
    80V
    79.6 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PSMN2R2-25YLC,115
    12 Weeks
    Surface Mount
    SC-100, SOT-669
    4
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    2011
    Active
    1 (Unlimited)
    3.15MOhm
    -
    -
    MOSFET (Metal Oxide)
    1
    106W Tc
    -
    106W
    24 ns
    N-Channel
    2.4m Ω @ 25A, 10V
    1.95V @ 1mA
    2542pF @ 12V
    100A Tc
    39nC @ 10V
    34ns
    -
    4.5V 10V
    ±20V
    16 ns
    36 ns
    100A
    20V
    25V
    25V
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    SILICON
    4
    HIGH RELIABILITY
    SINGLE
    GULL WING
    -
    -
    4
    -
    -
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    MO-235
    -
    636A
    -
    60 mJ
    YES
    e3
    Tin (Sn)
    -
    -
    -
    -
    -
    -
  • PSMN020-150W,127
    -
    Through Hole
    TO-247-3
    -
    -
    -
    -55°C~175°C TJ
    Tube
    1999
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    1
    300W Tc
    -
    -
    -
    N-Channel
    20m Ω @ 25A, 10V
    4V @ 1mA
    9537pF @ 25V
    73A Tc
    227nC @ 10V
    -
    150V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    SILICON
    3
    -
    SINGLE
    -
    NOT SPECIFIED
    NOT SPECIFIED
    3
    -
    R-PSFM-T3
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    -
    0.02Ohm
    290A
    150V
    707 mJ
    NO
    e3
    Matte Tin (Sn)
    TrenchMOS™
    EAR99
    FET General Purpose Power
    unknown
    Not Qualified
    73A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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