Nexperia USA Inc. PSMN022-30PL,127
- Part Number:
- PSMN022-30PL,127
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2478883-PSMN022-30PL,127
- Description:
- MOSFET N-CH 30V TO220AB
- Datasheet:
- PSMN022-30PL,127
Nexperia USA Inc. PSMN022-30PL,127 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PSMN022-30PL,127.
- Factory Lead Time12 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight453.59237mg
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2010
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance22MOhm
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max41W Tc
- Element ConfigurationSingle
- Power Dissipation41W
- Turn On Delay Time12 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs22mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id2.15V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds447pF @ 15V
- Current - Continuous Drain (Id) @ 25°C30A Tc
- Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
- Rise Time29ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)7 ns
- Turn-Off Delay Time17 ns
- Continuous Drain Current (ID)30A
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage30V
- Drain to Source Breakdown Voltage30V
- Input Capacitance447pF
- Drain to Source Resistance22mOhm
- Rds On Max22 mΩ
- Height6.35mm
- Length6.35mm
- Width6.35mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PSMN022-30PL,127 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 447pF @ 15V.This device has a continuous drain current (ID) of [30A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 17 ns.MOSFETs have 22mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
PSMN022-30PL,127 Features
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 22mOhm
a 30V drain to source voltage (Vdss)
PSMN022-30PL,127 Applications
There are a lot of Nexperia USA Inc.
PSMN022-30PL,127 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 447pF @ 15V.This device has a continuous drain current (ID) of [30A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 17 ns.MOSFETs have 22mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
PSMN022-30PL,127 Features
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 22mOhm
a 30V drain to source voltage (Vdss)
PSMN022-30PL,127 Applications
There are a lot of Nexperia USA Inc.
PSMN022-30PL,127 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
PSMN022-30PL,127 More Descriptions
MOSFET, N CH, 30V, 30A, 3-TO-220AB; Transistor Polarity:N Channel; Continuous Dr
PSMN022-30PL - N-channel 30 V 22 mΩ logic level MOSFET
Power Field-Effect Transistor, 30A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 30V 30A 3-Pin(3 Tab) TO-220AB Tube
NEXPERIA - PSMN022-30PL,127 - MOSFET, N CHANNEL, 30V, 30A, 3-TO-220AB
MOSFET, N CH, 30V, 30A, 3-TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):19mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V
PSMN022-30PL - N-channel 30 V 22 mΩ logic level MOSFET
Power Field-Effect Transistor, 30A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 30V 30A 3-Pin(3 Tab) TO-220AB Tube
NEXPERIA - PSMN022-30PL,127 - MOSFET, N CHANNEL, 30V, 30A, 3-TO-220AB
MOSFET, N CH, 30V, 30A, 3-TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):19mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V
The three parts on the right have similar specifications to PSMN022-30PL,127.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageDrain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeMountTransistor Element MaterialNumber of TerminationsAdditional FeatureTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountReference StandardJESD-30 CodeConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Surface MountJESD-609 CodeTerminal FinishSeriesECCN CodeSubcategoryReach Compliance CodeQualification StatusDrain Current-Max (Abs) (ID)View Compare
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PSMN022-30PL,12712 WeeksThrough HoleTO-220-33TO-220AB453.59237mg-55°C~175°C TJTube2010Active1 (Unlimited)22MOhm175°C-55°CMOSFET (Metal Oxide)141W TcSingle41W12 nsN-Channel22mOhm @ 5A, 10V2.15V @ 1mA447pF @ 15V30A Tc9nC @ 10V29ns30V4.5V 10V±20V7 ns17 ns30A20V30V30V447pF22mOhm22 mΩ6.35mm6.35mm6.35mmNoROHS3 CompliantLead Free------------------------------
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12 WeeksSurface MountSC-100, SOT-669----55°C~175°C TJTape & Reel (TR)2016Active1 (Unlimited)---MOSFET (Metal Oxide)1147W Tc---N-Channel14m Ω @ 15A, 10V2.1V @ 1mA4640pF @ 25V62A Tc28.9nC @ 5V-80V5V 10V±20V--62A----------ROHS3 Compliant-Surface MountSILICON4AVALANCHE RATEDSINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIED4IEC-60134R-PSSO-G4SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGMO-2350.015Ohm250A80V79.6 mJ---------
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12 WeeksSurface MountSC-100, SOT-6694---55°C~175°C TJTape & Reel (TR)2011Active1 (Unlimited)3.15MOhm--MOSFET (Metal Oxide)1106W Tc-106W24 nsN-Channel2.4m Ω @ 25A, 10V1.95V @ 1mA2542pF @ 12V100A Tc39nC @ 10V34ns-4.5V 10V±20V16 ns36 ns100A20V25V25V------NoROHS3 CompliantLead Free-SILICON4HIGH RELIABILITYSINGLEGULL WING--4--SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGMO-235-636A-60 mJYESe3Tin (Sn)------
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-Through HoleTO-247-3----55°C~175°C TJTube1999Obsolete1 (Unlimited)---MOSFET (Metal Oxide)1300W Tc---N-Channel20m Ω @ 25A, 10V4V @ 1mA9537pF @ 25V73A Tc227nC @ 10V-150V10V±20V-------------ROHS3 Compliant--SILICON3-SINGLE-NOT SPECIFIEDNOT SPECIFIED3-R-PSFM-T3SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING-0.02Ohm290A150V707 mJNOe3Matte Tin (Sn)TrenchMOS™EAR99FET General Purpose PowerunknownNot Qualified73A
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