Nexperia USA Inc. PSMN010-80YLX

Name: PSMN010-80YLX
Brand: Nexperia USA Inc.
SKU: 2484461-PSMN010-80YLX
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: PSMN010-80YLX

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2484461-PSMN010-80YLX

Description:: MOSFET N-CH 80V LFPAK56

ECAD Model:

Datasheet:: PSMN010-80YLX

Specifications

Nexperia USA Inc. PSMN010-80YLX technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PSMN010-80YLX.

Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2016
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Additional Feature
AVALANCHE RATED
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Pin Count
4
Reference Standard
IEC-60134
JESD-30 Code
R-PSSO-G4
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
194W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
10m Ω @ 25A, 10V
Vgs(th) (Max) @ Id
2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
6506pF @ 25V
Current - Continuous Drain (Id) @ 25°C
84A Tc
Gate Charge (Qg) (Max) @ Vgs
44.2nC @ 5V
Drain to Source Voltage (Vdss)
80V
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
84A
JEDEC-95 Code
MO-235
Drain-source On Resistance-Max
0.011Ohm
Pulsed Drain Current-Max (IDM)
336A
DS Breakdown Voltage-Min
80V
Avalanche Energy Rating (Eas)
112.8 mJ
RoHS Status
ROHS3 Compliant

Description

PSMN010-80YLX Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 112.8 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6506pF @ 25V.This device has a continuous drain current (ID) of [84A], which is its maximum continuous current.A maximum pulsed drain current of 336A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 80V.In order to operate this transistor, a voltage of 80V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (5V 10V).

PSMN010-80YLX Features
the avalanche energy rating (Eas) is 112.8 mJ
a continuous drain current (ID) of 84A
based on its rated peak drain current 336A.
a 80V drain to source voltage (Vdss)

PSMN010-80YLX Applications
There are a lot of Nexperia USA Inc.
PSMN010-80YLX applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

PSMN010-80YLX More Descriptions

PSMN010-80YL - N-channel 80 V, 10 mΩ logic level MOSFET in LFPAK56
MOSFET, N-CH, 80V, 84A, SOT-669-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 84A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0074ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 194W; Transistor Case Style: SOT-669; No. of Pins: 4Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Power Field-Effect Transistor, 84A I(D), 80V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235

Product Comparison

The three parts on the right have similar specifications to PSMN010-80YLX.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Additional Feature

Technology

Terminal Position

Terminal Form

Pin Count

Reference Standard

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

JEDEC-95 Code

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Surface Mount

Subcategory

Reach Compliance Code

Drain Current-Max (Abs) (ID)

Source Url Status Check Date

Series

JESD-609 Code

ECCN Code

Terminal Finish

HTS Code

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

View Compare
PSMN010-80YLX

Nexperia USA Inc.

12 Weeks

Surface Mount

Surface Mount

SC-100, SOT-669

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

2016

Active

1 (Unlimited)

4

AVALANCHE RATED

MOSFET (Metal Oxide)

SINGLE

GULL WING

4

IEC-60134

R-PSSO-G4

1

SINGLE WITH BUILT-IN DIODE

194W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

10m Ω @ 25A, 10V

2.1V @ 1mA

6506pF @ 25V

84A Tc

44.2nC @ 5V

80V

5V 10V

±20V

84A

MO-235

0.011Ohm

336A

80V

112.8 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-
PSMN013-100XS,127

NXP USA Inc.

-

-

Through Hole

TO-220-3 Full Pack, Isolated Tab

-

-55°C~175°C TJ

Tube

2012

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

3

-

-

-

Single

48.4W Tc

ENHANCEMENT MODE

-

N-Channel

-

13.9m Ω @ 10A, 10V

4V @ 1mA

3195pF @ 50V

35.2A Tc

57.5nC @ 10V

100V

10V

±20V

-

-

-

-

-

-

ROHS3 Compliant

NO

FET General Purpose Power

not_compliant

35.2A

2013-06-14 00:00:00

-

-

-

-

-

-

-

-

PSMN010-80YLX vs PSMN013-100XS,127
PSMN005-75B,118

Nexperia USA Inc.

12 Weeks

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

2001

Active

1 (Unlimited)

2

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

3

-

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

230W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

5m Ω @ 25A, 10V

4V @ 1mA

8250pF @ 25V

75A Tc

165nC @ 10V

75V

10V

±20V

-

-

0.005Ohm

400A

75V

500 mJ

ROHS3 Compliant

YES

-

not_compliant

75A

-

TrenchMOS™

e3

EAR99

Tin (Sn)

8541.29.00.75

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

PSMN010-80YLX vs PSMN005-75B,118
PSMN020-150W,127

NXP USA Inc.

-

-

Through Hole

TO-247-3

SILICON

-55°C~175°C TJ

Tube

1999

Obsolete

1 (Unlimited)

3

-

MOSFET (Metal Oxide)

SINGLE

-

3

-

R-PSFM-T3

1

SINGLE WITH BUILT-IN DIODE

300W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

20m Ω @ 25A, 10V

4V @ 1mA

9537pF @ 25V

73A Tc

227nC @ 10V

150V

10V

±20V

-

-

0.02Ohm

290A

150V

707 mJ

ROHS3 Compliant

NO

FET General Purpose Power

unknown

73A

-

TrenchMOS™

e3

EAR99

Matte Tin (Sn)

-

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

PSMN010-80YLX vs PSMN020-150W,127

Certification

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PSMN010~~(5)~~
PSMN01~~(64)~~
PSMN0~~(178)~~
PSMN~~(234)~~
PSM~~(513)~~

Part Number	Manufacturers	Description	Stock	Price
PSMN010-80YLX DISTI #V36:1790_14210074	Nexperia	PSMN010-80YL/LFPAK/REEL 7" Q1/	0
PSMN010-80YLX DISTI #1727-2588-1-ND	Nexperia	MOSFET N-CH 80V LFPAK56 RoHS: Compliant	5743	1 $0.85 10 $0.763 100 $0.5948 500 $0.4914
PSMN010-80YLX DISTI #1727-2588-6-ND	Nexperia	MOSFET N-CH 80V LFPAK56 RoHS: Compliant	5743	1 $0.85 10 $0.763 100 $0.5948 500 $0.4914
PSMN010-80YLX DISTI #1727-2588-2-ND	Nexperia	MOSFET N-CH 80V LFPAK56 RoHS: Compliant	4500	1500 $0.37665 3000 $0.35154
PSMN010-80YLX DISTI #PSMN010-80YLX	Nexperia	Trans MOSFET N-CH 80V 84A 4-Pin LFPAK-56 T/R - Tap RoHS: Compliant	0	3000 $0.3299 6000 $0.3259 9000 $0.3169 15000 $0.3099 30000 $0.3019
PSMN010-80YLX DISTI #96Y9580	Nexperia	MOSFET, N-CH, 80V, 84A, SOT-669-4, Transistor Pol	176	1 $0.838 10 $0.71 25 $0.655 50 $0.6 100 $0.545 250 $0.514 500 $0.483 1000 $0.381
PSMN010-80YLX DISTI #771-PSMN010-80YLX	Nexperia	MOSFET PSMN010-80YL/LFPAK/REEL 7" Q1/ RoHS: Compliant	2896	1 $0.83 10 $0.703 100 $0.54 500 $0.478 1000 $0.377 1500 $0.334 9000 $0.322 24000 $0.312
PSMN010-80YLX DISTI #2617065	Nexperia	MOSFET, N-CH, 80V, 84A, SOT-669-4 RoHS: Compliant	176	1 $1.25 10 $1.08 100 $0.777 250 $0.648 500 $0.536 1000 $0.502
PSMN010-80YLX DISTI #2617065	Nexperia	MOSFET, N-CH, 80V, 84A, SOT-669-4	176	5 $0.632 25 $0.573 100 $0.432 250 $0.408 500 $0.383

Nexperia USA Inc. PSMN010-80YLX

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