IXYS IXFR58N20

IXFR58N20 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 3600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 50A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 232A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFR58N20 Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 50A
based on its rated peak drain current 232A.
a 200V drain to source voltage (Vdss)


IXFR58N20 Applications
There are a lot of IXYS
IXFR58N20 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples