IXYS IXFR48N60P
- Part Number:
- IXFR48N60P
- Manufacturer:
- IXYS
- Ventron No:
- 2851180-IXFR48N60P
- Description:
- MOSFET N-CH 600V 32A ISOPLUS247
- Datasheet:
- IXFR48N60P
IXYS IXFR48N60P technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFR48N60P.
- Factory Lead Time30 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseISOPLUS247™
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHiPerFET™, PolarHT™
- Published2006
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAVALANCHE RATED, UL RECOGNIZED
- Voltage - Rated DC600V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating48A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max300W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300W
- Case ConnectionISOLATED
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs150m Ω @ 24A, 10V
- Vgs(th) (Max) @ Id5V @ 8mA
- Input Capacitance (Ciss) (Max) @ Vds8860pF @ 25V
- Current - Continuous Drain (Id) @ 25°C32A Tc
- Gate Charge (Qg) (Max) @ Vgs150nC @ 10V
- Rise Time25ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)22 ns
- Turn-Off Delay Time85 ns
- Continuous Drain Current (ID)32A
- Gate to Source Voltage (Vgs)30V
- Drain-source On Resistance-Max0.15Ohm
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)110A
- Avalanche Energy Rating (Eas)2000 mJ
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXFR48N60P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 8860pF @ 25V.This device conducts a continuous drain current (ID) of 32A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 85 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 110A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFR48N60P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 110A.
IXFR48N60P Applications
There are a lot of IXYS
IXFR48N60P applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 8860pF @ 25V.This device conducts a continuous drain current (ID) of 32A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 85 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 110A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFR48N60P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 110A.
IXFR48N60P Applications
There are a lot of IXYS
IXFR48N60P applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IXFR48N60P More Descriptions
N-Channel 600 V 150 mOhm Enhancement Mode Power MOSFET - ISOPLUS-247
Trans MOSFET N-CH Si 600V 32A 3-Pin(3 Tab) ISOPLUS 247
Mosfet, N-Ch, 600V, 32A, Isoplus-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:32A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Ixys Semiconductor IXFR48N60P
MOSFET, N-CH, 600V, 32A, ISOPLUS-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 32A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 300W; Transistor Case Style: ISOPLUS-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PolarHV HiPerFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
Trans MOSFET N-CH Si 600V 32A 3-Pin(3 Tab) ISOPLUS 247
Mosfet, N-Ch, 600V, 32A, Isoplus-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:32A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Ixys Semiconductor IXFR48N60P
MOSFET, N-CH, 600V, 32A, ISOPLUS-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 32A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 300W; Transistor Case Style: ISOPLUS-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PolarHV HiPerFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
The three parts on the right have similar specifications to IXFR48N60P.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLead FreeSubcategoryTerminal PositionReach Compliance CodeJESD-30 CodeConfigurationDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinResistanceDrain Current-Max (Abs) (ID)View Compare
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IXFR48N60P30 WeeksThrough HoleThrough HoleISOPLUS247™3SILICON-55°C~150°C TJTubeHiPerFET™, PolarHT™2006e1yesActive1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATED, UL RECOGNIZED600VMOSFET (Metal Oxide)NOT SPECIFIED48ANOT SPECIFIED3Not Qualified1300W TcSingleENHANCEMENT MODE300WISOLATEDN-ChannelSWITCHING150m Ω @ 24A, 10V5V @ 8mA8860pF @ 25V32A Tc150nC @ 10V25ns10V±30V22 ns85 ns32A30V0.15Ohm600V110A2000 mJROHS3 CompliantLead Free----------
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30 WeeksThrough HoleThrough HoleISOPLUS247™-SILICON-55°C~150°C TJTubeHiPerFET™, PolarP2™2008e1yesActive1 (Unlimited)3-Tin/Silver/Copper (Sn/Ag/Cu)UL RECOGNIZED, AVALANCHE RATED-MOSFET (Metal Oxide)NOT SPECIFIED-NOT SPECIFIED3Not Qualified1230W Tc-ENHANCEMENT MODE-ISOLATEDN-ChannelSWITCHING460m Ω @ 12A, 10V6.5V @ 1mA7200pF @ 25V13A Tc130nC @ 10V-10V±30V--13A-0.46Ohm-48A1000 mJROHS3 Compliant-FET General Purpose PowerSINGLEunknownR-PSIP-T3SINGLE WITH BUILT-IN DIODE900V900V--
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30 WeeksThrough HoleThrough HoleISOPLUS247™3SILICON-55°C~150°C TJTubeHiPerFET™, PolarHT™2006e1yesActive1 (Unlimited)3-Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATED, UL RECOGNIZED500VMOSFET (Metal Oxide)NOT SPECIFIED44ANOT SPECIFIED3Not Qualified1208W TcSingleENHANCEMENT MODE208WISOLATEDN-ChannelSWITCHING150m Ω @ 22A, 10V5V @ 4mA5440pF @ 25V24A Tc98nC @ 10V27ns10V±30V18 ns70 ns24A30V-500V-1700 mJROHS3 CompliantLead Free-------150MOhm-
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-Through HoleThrough HoleISOPLUS247™3SILICON-55°C~150°C TJTubeHiPerFET™2000e1yesObsolete1 (Unlimited)3-Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATED-MOSFET (Metal Oxide)NOT SPECIFIED-NOT SPECIFIED3Not Qualified1310W TcSingleENHANCEMENT MODE310WISOLATEDN-ChannelSWITCHING160m Ω @ 15A, 10V4V @ 4mA3950pF @ 25V30A Tc150nC @ 10V42ns10V±20V20 ns75 ns30A20V0.16Ohm500V120A1500 mJRoHS Compliant-FET General Purpose Power-------29A
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