IXYS IXFR30N50Q
- Part Number:
- IXFR30N50Q
- Manufacturer:
- IXYS
- Ventron No:
- 2851135-IXFR30N50Q
- Description:
- MOSFET N-CH 500V 30A ISOPLUS247
- Datasheet:
- IXFR(30,32)N50Q
IXYS IXFR30N50Q technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFR30N50Q.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseISOPLUS247™
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHiPerFET™
- Published2000
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max310W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation310W
- Case ConnectionISOLATED
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs160m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id4V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds3950pF @ 25V
- Current - Continuous Drain (Id) @ 25°C30A Tc
- Gate Charge (Qg) (Max) @ Vgs150nC @ 10V
- Rise Time42ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time75 ns
- Continuous Drain Current (ID)30A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)29A
- Drain-source On Resistance-Max0.16Ohm
- Drain to Source Breakdown Voltage500V
- Pulsed Drain Current-Max (IDM)120A
- Avalanche Energy Rating (Eas)1500 mJ
- RoHS StatusRoHS Compliant
IXFR30N50Q Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 3950pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 30A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 29A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 120A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).
IXFR30N50Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 120A.
IXFR30N50Q Applications
There are a lot of IXYS
IXFR30N50Q applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 3950pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 30A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 29A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 120A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).
IXFR30N50Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 120A.
IXFR30N50Q Applications
There are a lot of IXYS
IXFR30N50Q applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IXFR30N50Q More Descriptions
Trans MOSFET N-CH 500V 30A 3-Pin(3 Tab) ISOPLUS247
The three parts on the right have similar specifications to IXFR30N50Q.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusECCN CodeFactory Lead TimeResistanceVoltage - Rated DCCurrent RatingLead FreeDrain to Source Voltage (Vdss)View Compare
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IXFR30N50QThrough HoleThrough HoleISOPLUS247™3SILICON-55°C~150°C TJTubeHiPerFET™2000e1yesObsolete1 (Unlimited)3Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1310W TcSingleENHANCEMENT MODE310WISOLATEDN-ChannelSWITCHING160m Ω @ 15A, 10V4V @ 4mA3950pF @ 25V30A Tc150nC @ 10V42ns10V±20V20 ns75 ns30A20V29A0.16Ohm500V120A1500 mJRoHS Compliant--------
-
Through HoleThrough HoleISOPLUS247™3SILICON-55°C~150°C TJTubeHiPerFET™2000e1yesObsolete1 (Unlimited)3Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1310W TcSingleENHANCEMENT MODE310WISOLATEDN-ChannelSWITCHING22.5m Ω @ 40A, 10V4V @ 4mA4600pF @ 25V75A Tc180nC @ 10V55ns10V±20V20 ns68 ns75A20V-0.0225Ohm150V-1500 mJRoHS CompliantEAR99------
-
Through HoleThrough HoleISOPLUS247™3SILICON-55°C~150°C TJTubeHiPerFET™, PolarHT™2006e1yesActive1 (Unlimited)3Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATED, UL RECOGNIZED-MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1208W TcSingleENHANCEMENT MODE208WISOLATEDN-ChannelSWITCHING150m Ω @ 22A, 10V5V @ 4mA5440pF @ 25V24A Tc98nC @ 10V27ns10V±30V18 ns70 ns24A30V--500V-1700 mJROHS3 Compliant-30 Weeks150MOhm500V44ALead Free-
-
Through HoleThrough HoleISOPLUS247™---Tube----Active1 (Unlimited)----MOSFET (Metal Oxide)----------N-Channel------------------ROHS3 Compliant-18 Weeks----1200V
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