IXYS IXFR44N50P
- Part Number:
- IXFR44N50P
- Manufacturer:
- IXYS
- Ventron No:
- 2851146-IXFR44N50P
- Description:
- MOSFET N-CH 500V 24A ISOPLUS247
- Datasheet:
- IXFR44N50P
IXYS IXFR44N50P technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFR44N50P.
- Factory Lead Time30 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseISOPLUS247™
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHiPerFET™, PolarHT™
- Published2006
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Resistance150MOhm
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAVALANCHE RATED, UL RECOGNIZED
- Voltage - Rated DC500V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating44A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max208W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation208W
- Case ConnectionISOLATED
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs150m Ω @ 22A, 10V
- Vgs(th) (Max) @ Id5V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds5440pF @ 25V
- Current - Continuous Drain (Id) @ 25°C24A Tc
- Gate Charge (Qg) (Max) @ Vgs98nC @ 10V
- Rise Time27ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)18 ns
- Turn-Off Delay Time70 ns
- Continuous Drain Current (ID)24A
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage500V
- Avalanche Energy Rating (Eas)1700 mJ
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXFR44N50P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1700 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5440pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 24A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [70 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFR44N50P Features
the avalanche energy rating (Eas) is 1700 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
IXFR44N50P Applications
There are a lot of IXYS
IXFR44N50P applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1700 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5440pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 24A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [70 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFR44N50P Features
the avalanche energy rating (Eas) is 1700 mJ
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
IXFR44N50P Applications
There are a lot of IXYS
IXFR44N50P applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IXFR44N50P More Descriptions
Single N-Channel 500 V 150 mOhm 208 W Power Mosfet - ISOPLUS247
Trans MOSFET N-CH 500V 24A 3-Pin(3 Tab) ISOPLUS 247
MOSFET N-CH 500V 24A ISOPLUS247
Trans MOSFET N-CH 500V 24A 3-Pin(3 Tab) ISOPLUS 247
MOSFET N-CH 500V 24A ISOPLUS247
The three parts on the right have similar specifications to IXFR44N50P.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsResistanceTerminal FinishAdditional FeatureVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)RoHS StatusLead FreeECCN CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)SubcategoryTerminal PositionJESD-30 CodeConfigurationDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinDrain Current-Max (Abs) (ID)View Compare
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IXFR44N50P30 WeeksThrough HoleThrough HoleISOPLUS247™3SILICON-55°C~150°C TJTubeHiPerFET™, PolarHT™2006e1yesActive1 (Unlimited)3150MOhmTin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATED, UL RECOGNIZED500VMOSFET (Metal Oxide)NOT SPECIFIED44ANOT SPECIFIED3Not Qualified1208W TcSingleENHANCEMENT MODE208WISOLATEDN-ChannelSWITCHING150m Ω @ 22A, 10V5V @ 4mA5440pF @ 25V24A Tc98nC @ 10V27ns10V±30V18 ns70 ns24A30V500V1700 mJROHS3 CompliantLead Free-----------
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30 WeeksThrough HoleThrough HoleISOPLUS247™3SILICON-55°C~150°C TJTubeHiPerFET™, PolarHT™2006e1yesActive1 (Unlimited)3-Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATED, UL RECOGNIZED600VMOSFET (Metal Oxide)NOT SPECIFIED48ANOT SPECIFIED3Not Qualified1300W TcSingleENHANCEMENT MODE300WISOLATEDN-ChannelSWITCHING150m Ω @ 24A, 10V5V @ 8mA8860pF @ 25V32A Tc150nC @ 10V25ns10V±30V22 ns85 ns32A30V600V2000 mJROHS3 CompliantLead FreeEAR990.15Ohm110A-------
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26 WeeksThrough HoleThrough HoleISOPLUS247™-SILICON-55°C~150°C TJTubeHiPerFET™2003e1yesActive1 (Unlimited)3-Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATED-MOSFET (Metal Oxide)NOT SPECIFIED-NOT SPECIFIED3Not Qualified1300W Tc-ENHANCEMENT MODE-ISOLATEDN-ChannelSWITCHING40m Ω @ 29A, 10V4V @ 4mA3600pF @ 25V50A Tc140nC @ 10V-10V±20V--50A--1000 mJROHS3 Compliant-EAR990.04Ohm232AFET General Purpose PowerSINGLER-PSIP-T3SINGLE WITH BUILT-IN DIODE200V200V-
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-Through HoleThrough HoleISOPLUS247™3SILICON-55°C~150°C TJTubeHiPerFET™2000e1yesObsolete1 (Unlimited)3-Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATED-MOSFET (Metal Oxide)NOT SPECIFIED-NOT SPECIFIED3Not Qualified1310W TcSingleENHANCEMENT MODE310WISOLATEDN-ChannelSWITCHING160m Ω @ 15A, 10V4V @ 4mA3950pF @ 25V30A Tc150nC @ 10V42ns10V±20V20 ns75 ns30A20V500V1500 mJRoHS Compliant--0.16Ohm120AFET General Purpose Power-----29A
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