IXYS IXFR26N60Q
- Part Number:
- IXFR26N60Q
- Manufacturer:
- IXYS
- Ventron No:
- 2851238-IXFR26N60Q
- Description:
- MOSFET N-CH 600V 23A ISOPLUS247
- Datasheet:
- IXFR26N60Q
IXYS IXFR26N60Q technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFR26N60Q.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseISOPLUS247™
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHiPerFET™
- Published2000
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAVALANCHE RATED
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max310W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation310W
- Case ConnectionISOLATED
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs250m Ω @ 13A, 10V
- Vgs(th) (Max) @ Id4.5V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds5100pF @ 25V
- Current - Continuous Drain (Id) @ 25°C23A Tc
- Gate Charge (Qg) (Max) @ Vgs200nC @ 10V
- Rise Time32ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time80 ns
- Continuous Drain Current (ID)23A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.25Ohm
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)92A
- Avalanche Energy Rating (Eas)1500 mJ
- RoHS StatusRoHS Compliant
IXFR26N60Q Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 23A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.Peak drain current is 92A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFR26N60Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 92A.
IXFR26N60Q Applications
There are a lot of IXYS
IXFR26N60Q applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 23A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.Peak drain current is 92A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFR26N60Q Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 92A.
IXFR26N60Q Applications
There are a lot of IXYS
IXFR26N60Q applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IXFR26N60Q More Descriptions
MOSFET N-CH 600V 23A ISOPLUS247
OEMs, CMs ONLY (NO BROKERS)
Contact for details
OEMs, CMs ONLY (NO BROKERS)
Contact for details
The three parts on the right have similar specifications to IXFR26N60Q.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusECCN CodeSubcategoryFactory Lead TimeTerminal PositionReach Compliance CodeJESD-30 CodeConfigurationDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinResistanceVoltage - Rated DCCurrent RatingLead FreeView Compare
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IXFR26N60QThrough HoleThrough HoleISOPLUS247™3SILICON-55°C~150°C TJTubeHiPerFET™2000e1yesObsolete1 (Unlimited)3Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1310W TcSingleENHANCEMENT MODE310WISOLATEDN-ChannelSWITCHING250m Ω @ 13A, 10V4.5V @ 4mA5100pF @ 25V23A Tc200nC @ 10V32ns10V±20V15 ns80 ns23A20V0.25Ohm600V92A1500 mJRoHS Compliant--------------
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Through HoleThrough HoleISOPLUS247™3SILICON-55°C~150°C TJTubeHiPerFET™2000e1yesObsolete1 (Unlimited)3Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1310W TcSingleENHANCEMENT MODE310WISOLATEDN-ChannelSWITCHING22.5m Ω @ 40A, 10V4V @ 4mA4600pF @ 25V75A Tc180nC @ 10V55ns10V±20V20 ns68 ns75A20V0.0225Ohm150V-1500 mJRoHS CompliantEAR99FET General Purpose Power-----------
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Through HoleThrough HoleISOPLUS247™-SILICON-55°C~150°C TJTubeHiPerFET™, PolarP2™2008e1yesActive1 (Unlimited)3Tin/Silver/Copper (Sn/Ag/Cu)UL RECOGNIZED, AVALANCHE RATEDMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1230W Tc-ENHANCEMENT MODE-ISOLATEDN-ChannelSWITCHING460m Ω @ 12A, 10V6.5V @ 1mA7200pF @ 25V13A Tc130nC @ 10V-10V±30V--13A-0.46Ohm-48A1000 mJROHS3 Compliant-FET General Purpose Power30 WeeksSINGLEunknownR-PSIP-T3SINGLE WITH BUILT-IN DIODE900V900V----
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Through HoleThrough HoleISOPLUS247™3SILICON-55°C~150°C TJTubeHiPerFET™, PolarHT™2006e1yesActive1 (Unlimited)3Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATED, UL RECOGNIZEDMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1208W TcSingleENHANCEMENT MODE208WISOLATEDN-ChannelSWITCHING150m Ω @ 22A, 10V5V @ 4mA5440pF @ 25V24A Tc98nC @ 10V27ns10V±30V18 ns70 ns24A30V-500V-1700 mJROHS3 Compliant--30 Weeks------150MOhm500V44ALead Free
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