IXYS IXFR180N085
- Part Number:
- IXFR180N085
- Manufacturer:
- IXYS
- Ventron No:
- 2851224-IXFR180N085
- Description:
- MOSFET N-CH 85V 180A ISOPLUS247
- Datasheet:
- IXFR180N085
IXYS IXFR180N085 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFR180N085.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseISOPLUS247™
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHiPerFET™
- Published2000
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max400W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation400W
- Case ConnectionISOLATED
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7m Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id4V @ 8mA
- Input Capacitance (Ciss) (Max) @ Vds9100pF @ 25V
- Current - Continuous Drain (Id) @ 25°C180A Tc
- Gate Charge (Qg) (Max) @ Vgs320nC @ 10V
- Rise Time90ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)55 ns
- Turn-Off Delay Time140 ns
- Continuous Drain Current (ID)180A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.007Ohm
- Drain to Source Breakdown Voltage85V
- Pulsed Drain Current-Max (IDM)720A
- RoHS StatusRoHS Compliant
IXFR180N085 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 9100pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 180A.With a drain-source breakdown voltage of 85V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 85V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 140 ns.Peak drain current for this device is 720A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
IXFR180N085 Features
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 140 ns
based on its rated peak drain current 720A.
IXFR180N085 Applications
There are a lot of IXYS
IXFR180N085 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 9100pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 180A.With a drain-source breakdown voltage of 85V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 85V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 140 ns.Peak drain current for this device is 720A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
IXFR180N085 Features
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 140 ns
based on its rated peak drain current 720A.
IXFR180N085 Applications
There are a lot of IXYS
IXFR180N085 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IXFR180N085 More Descriptions
Trans MOSFET N-CH 85V 180A 3-Pin(3 Tab) ISOPLUS247
MOSFET, N ISOPLUS247MOSFET, N ISOPLUS247; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:85V; Case style:ISOPLUS-247; Current, Id cont:76A; Current, Idm pulse:720A; Power, Pd:400W; Resistance, Rds on:0.007R; RoHS Compliant: Yes
MOSFET, N, ISOPLUS247; Transistor Polarity: N Channel; Continuous Drain Current Id: 76A; Drain Source Voltage Vds: 85V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 4V; Power Dissipation
MOSFET, N ISOPLUS247MOSFET, N ISOPLUS247; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:85V; Case style:ISOPLUS-247; Current, Id cont:76A; Current, Idm pulse:720A; Power, Pd:400W; Resistance, Rds on:0.007R; RoHS Compliant: Yes
MOSFET, N, ISOPLUS247; Transistor Polarity: N Channel; Continuous Drain Current Id: 76A; Drain Source Voltage Vds: 85V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 4V; Power Dissipation
The three parts on the right have similar specifications to IXFR180N085.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)RoHS StatusAvalanche Energy Rating (Eas)Factory Lead TimeTerminal PositionReach Compliance CodeJESD-30 CodeConfigurationDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinResistanceVoltage - Rated DCCurrent RatingLead FreeView Compare
-
IXFR180N085Through HoleThrough HoleISOPLUS247™3SILICON-55°C~150°C TJTubeHiPerFET™2000e1yesObsolete1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1400W TcSingleENHANCEMENT MODE400WISOLATEDN-ChannelSWITCHING7m Ω @ 500mA, 10V4V @ 8mA9100pF @ 25V180A Tc320nC @ 10V90ns10V±20V55 ns140 ns180A20V0.007Ohm85V720ARoHS Compliant-------------
-
Through HoleThrough HoleISOPLUS247™3SILICON-55°C~150°C TJTubeHiPerFET™2000e1yesObsolete1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1310W TcSingleENHANCEMENT MODE310WISOLATEDN-ChannelSWITCHING22.5m Ω @ 40A, 10V4V @ 4mA4600pF @ 25V75A Tc180nC @ 10V55ns10V±20V20 ns68 ns75A20V0.0225Ohm150V-RoHS Compliant1500 mJ-----------
-
Through HoleThrough HoleISOPLUS247™-SILICON-55°C~150°C TJTubeHiPerFET™, PolarP2™2008e1yesActive1 (Unlimited)3-Tin/Silver/Copper (Sn/Ag/Cu)UL RECOGNIZED, AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1230W Tc-ENHANCEMENT MODE-ISOLATEDN-ChannelSWITCHING460m Ω @ 12A, 10V6.5V @ 1mA7200pF @ 25V13A Tc130nC @ 10V-10V±30V--13A-0.46Ohm-48AROHS3 Compliant1000 mJ30 WeeksSINGLEunknownR-PSIP-T3SINGLE WITH BUILT-IN DIODE900V900V----
-
Through HoleThrough HoleISOPLUS247™3SILICON-55°C~150°C TJTubeHiPerFET™, PolarHT™2006e1yesActive1 (Unlimited)3-Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATED, UL RECOGNIZED-MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1208W TcSingleENHANCEMENT MODE208WISOLATEDN-ChannelSWITCHING150m Ω @ 22A, 10V5V @ 4mA5440pF @ 25V24A Tc98nC @ 10V27ns10V±30V18 ns70 ns24A30V-500V-ROHS3 Compliant1700 mJ30 Weeks------150MOhm500V44ALead Free
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
07 November 2023
TLP250 MOSFET IGBT Driver: Manufacturer, Footprint and Applications
Ⅰ. Overview of TLP250Ⅱ. Manufacturer of TLP250Ⅲ. TLP250 symbol, footprint and pin configurationⅣ. What are the features of TLP250?Ⅴ. Technical parameters of TLP250Ⅵ. How to use TLP250 isolated... -
07 November 2023
LM2596 Voltage Regulator: Equivalents, Features, Structure and Applications
Ⅰ. What is a voltage regulator?Ⅱ. Overview of LM2596 voltage regulatorⅢ. Features of LM2596 voltage regulatorⅣ. Pin configuration of LM2596 voltage regulatorⅤ. Structure of LM2596 voltage regulatorⅥ. LM2596... -
08 November 2023
What is MOC3021 Optocoupler Triac Driver?
Ⅰ. What is an optocoupler?Ⅱ. Overview of MOC3021 optocouplerⅢ. Pin configuration of MOC3021 optocouplerⅣ. Features of MOC3021 optocouplerⅤ. Technical parameters of MOC3021 optocouplerⅥ. Working principle of MOC3021 optocouplerⅦ.... -
08 November 2023
LM324 vs LM358: What is the Difference Between Them?
Ⅰ. What is an operational amplifier?Ⅱ. Overview of LM324Ⅲ. Overview of LM358Ⅳ. LM324 vs LM358: FeaturesⅤ. LM324 vs LM358: Technical parametersⅥ. LM324 vs LM358: Pin configurationⅦ. LM324 vs...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.