IXFR180N085

IXYS IXFR180N085

Part Number:
IXFR180N085
Manufacturer:
IXYS
Ventron No:
2851224-IXFR180N085
Description:
MOSFET N-CH 85V 180A ISOPLUS247
ECAD Model:
Datasheet:
IXFR180N085

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Specifications
IXYS IXFR180N085 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFR180N085.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    ISOPLUS247™
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HiPerFET™
  • Published
    2000
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    400W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    400W
  • Case Connection
    ISOLATED
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    7m Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    4V @ 8mA
  • Input Capacitance (Ciss) (Max) @ Vds
    9100pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    180A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    320nC @ 10V
  • Rise Time
    90ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    55 ns
  • Turn-Off Delay Time
    140 ns
  • Continuous Drain Current (ID)
    180A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.007Ohm
  • Drain to Source Breakdown Voltage
    85V
  • Pulsed Drain Current-Max (IDM)
    720A
  • RoHS Status
    RoHS Compliant
Description
IXFR180N085 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 9100pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 180A.With a drain-source breakdown voltage of 85V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 85V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 140 ns.Peak drain current for this device is 720A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.

IXFR180N085 Features
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 85V voltage
the turn-off delay time is 140 ns
based on its rated peak drain current 720A.


IXFR180N085 Applications
There are a lot of IXYS
IXFR180N085 applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IXFR180N085 More Descriptions
Trans MOSFET N-CH 85V 180A 3-Pin(3 Tab) ISOPLUS247
MOSFET, N ISOPLUS247MOSFET, N ISOPLUS247; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:85V; Case style:ISOPLUS-247; Current, Id cont:76A; Current, Idm pulse:720A; Power, Pd:400W; Resistance, Rds on:0.007R; RoHS Compliant: Yes
MOSFET, N, ISOPLUS247; Transistor Polarity: N Channel; Continuous Drain Current Id: 76A; Drain Source Voltage Vds: 85V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 4V; Power Dissipation
Product Comparison
The three parts on the right have similar specifications to IXFR180N085.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    RoHS Status
    Avalanche Energy Rating (Eas)
    Factory Lead Time
    Terminal Position
    Reach Compliance Code
    JESD-30 Code
    Configuration
    Drain to Source Voltage (Vdss)
    DS Breakdown Voltage-Min
    Resistance
    Voltage - Rated DC
    Current Rating
    Lead Free
    View Compare
  • IXFR180N085
    IXFR180N085
    Through Hole
    Through Hole
    ISOPLUS247™
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2000
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    400W Tc
    Single
    ENHANCEMENT MODE
    400W
    ISOLATED
    N-Channel
    SWITCHING
    7m Ω @ 500mA, 10V
    4V @ 8mA
    9100pF @ 25V
    180A Tc
    320nC @ 10V
    90ns
    10V
    ±20V
    55 ns
    140 ns
    180A
    20V
    0.007Ohm
    85V
    720A
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXFR80N15Q
    Through Hole
    Through Hole
    ISOPLUS247™
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2000
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    310W Tc
    Single
    ENHANCEMENT MODE
    310W
    ISOLATED
    N-Channel
    SWITCHING
    22.5m Ω @ 40A, 10V
    4V @ 4mA
    4600pF @ 25V
    75A Tc
    180nC @ 10V
    55ns
    10V
    ±20V
    20 ns
    68 ns
    75A
    20V
    0.0225Ohm
    150V
    -
    RoHS Compliant
    1500 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXFR24N90P
    Through Hole
    Through Hole
    ISOPLUS247™
    -
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™, PolarP2™
    2008
    e1
    yes
    Active
    1 (Unlimited)
    3
    -
    Tin/Silver/Copper (Sn/Ag/Cu)
    UL RECOGNIZED, AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    230W Tc
    -
    ENHANCEMENT MODE
    -
    ISOLATED
    N-Channel
    SWITCHING
    460m Ω @ 12A, 10V
    6.5V @ 1mA
    7200pF @ 25V
    13A Tc
    130nC @ 10V
    -
    10V
    ±30V
    -
    -
    13A
    -
    0.46Ohm
    -
    48A
    ROHS3 Compliant
    1000 mJ
    30 Weeks
    SINGLE
    unknown
    R-PSIP-T3
    SINGLE WITH BUILT-IN DIODE
    900V
    900V
    -
    -
    -
    -
  • IXFR44N50P
    Through Hole
    Through Hole
    ISOPLUS247™
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™, PolarHT™
    2006
    e1
    yes
    Active
    1 (Unlimited)
    3
    -
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED, UL RECOGNIZED
    -
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    208W Tc
    Single
    ENHANCEMENT MODE
    208W
    ISOLATED
    N-Channel
    SWITCHING
    150m Ω @ 22A, 10V
    5V @ 4mA
    5440pF @ 25V
    24A Tc
    98nC @ 10V
    27ns
    10V
    ±30V
    18 ns
    70 ns
    24A
    30V
    -
    500V
    -
    ROHS3 Compliant
    1700 mJ
    30 Weeks
    -
    -
    -
    -
    -
    -
    150MOhm
    500V
    44A
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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