IXYS IXFR24N90P

IXFR24N90P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 7200pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 13A continuous drain current (ID).Peak drain current is 48A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 900V.For this transistor to work, a voltage 900V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFR24N90P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 13A
based on its rated peak drain current 48A.
a 900V drain to source voltage (Vdss)


IXFR24N90P Applications
There are a lot of IXYS
IXFR24N90P applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies