IXYS IXFR12N120P

Name: IXFR12N120P
Brand: IXYS
SKU: 2851133-IXFR12N120P
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXFR12N120P

Manufacturer:: IXYS

Ventron No:: 2851133-IXFR12N120P

Description:: MOSFET N-CH 1200V ISOPLUS247

ECAD Model:

Datasheet:: IXFR12N120P

Specifications

IXYS IXFR12N120P technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFR12N120P.

Factory Lead Time
18 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1200V
RoHS Status
ROHS3 Compliant

Description

IXFR12N120P Overview
This transistor requires a 1200V drain to source voltage (Vdss).

IXFR12N120P Features
a 1200V drain to source voltage (Vdss)

IXFR12N120P Applications
There are a lot of IXYS
IXFR12N120P applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

IXFR12N120P More Descriptions

MOSFET N-CH 1200V ISOPLUS247

Product Comparison

The three parts on the right have similar specifications to IXFR12N120P.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

FET Type

Drain to Source Voltage (Vdss)

RoHS Status

Number of Pins

Transistor Element Material

Operating Temperature

Series

Published

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Voltage - Rated DC

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Lead Free

Subcategory

Terminal Position

JESD-30 Code

Configuration

DS Breakdown Voltage-Min

Drain Current-Max (Abs) (ID)

View Compare
IXFR12N120P

IXYS

18 Weeks

Through Hole

Through Hole

ISOPLUS247™

Tube

Active

1 (Unlimited)

MOSFET (Metal Oxide)

N-Channel

1200V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IXFR48N60P

IXYS

30 Weeks

Through Hole

Through Hole

ISOPLUS247™

Tube

Active

1 (Unlimited)

MOSFET (Metal Oxide)

N-Channel

-

ROHS3 Compliant

3

SILICON

-55°C~150°C TJ

HiPerFET™, PolarHT™

2006

e1

yes

3

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

AVALANCHE RATED, UL RECOGNIZED

600V

NOT SPECIFIED

48A

NOT SPECIFIED

3

Not Qualified

1

300W Tc

Single

ENHANCEMENT MODE

300W

ISOLATED

SWITCHING

150m Ω @ 24A, 10V

5V @ 8mA

8860pF @ 25V

32A Tc

150nC @ 10V

25ns

10V

±30V

22 ns

85 ns

32A

30V

0.15Ohm

600V

110A

2000 mJ

Lead Free

-

-

-

-

-

-

IXFR12N120P vs IXFR48N60P
IXFR58N20

IXYS

26 Weeks

Through Hole

Through Hole

ISOPLUS247™

Tube

Active

1 (Unlimited)

MOSFET (Metal Oxide)

N-Channel

200V

ROHS3 Compliant

-

SILICON

-55°C~150°C TJ

HiPerFET™

2003

e1

yes

3

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

AVALANCHE RATED

-

NOT SPECIFIED

-

NOT SPECIFIED

3

Not Qualified

1

300W Tc

-

ENHANCEMENT MODE

-

ISOLATED

SWITCHING

40m Ω @ 29A, 10V

4V @ 4mA

3600pF @ 25V

50A Tc

140nC @ 10V

-

10V

±20V

-

-

50A

-

0.04Ohm

-

232A

1000 mJ

-

FET General Purpose Power

SINGLE

R-PSIP-T3

SINGLE WITH BUILT-IN DIODE

200V

-

IXFR12N120P vs IXFR58N20
IXFR30N50Q

IXYS

-

Through Hole

Through Hole

ISOPLUS247™

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

N-Channel

-

RoHS Compliant

3

SILICON

-55°C~150°C TJ

HiPerFET™

2000

e1

yes

3

-

Tin/Silver/Copper (Sn/Ag/Cu)

AVALANCHE RATED

-

NOT SPECIFIED

-

NOT SPECIFIED

3

Not Qualified

1

310W Tc

Single

ENHANCEMENT MODE

310W

ISOLATED

SWITCHING

160m Ω @ 15A, 10V

4V @ 4mA

3950pF @ 25V

30A Tc

150nC @ 10V

42ns

10V

±20V

20 ns

75 ns

30A

20V

0.16Ohm

500V

120A

1500 mJ

-

FET General Purpose Power

-

-

-

-

29A

IXFR12N120P vs IXFR30N50Q