IXYS IXFH24N60X

Name: IXFH24N60X
Brand: IXYS
SKU: 2850670-IXFH24N60X
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXFH24N60X

Manufacturer:: IXYS

Ventron No:: 2850670-IXFH24N60X

Description:: MOSFET N-CH 600V 24A TO-247

ECAD Model:

Datasheet:: IXFH24N60X

Specifications

IXYS IXFH24N60X technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFH24N60X.

Factory Lead Time
19 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
HiPerFET™
Published
2015
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
400W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
175m Ω @ 12A, 10V
Vgs(th) (Max) @ Id
4.5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds
1910pF @ 25V
Current - Continuous Drain (Id) @ 25°C
24A Tc
Gate Charge (Qg) (Max) @ Vgs
47nC @ 10V
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Continuous Drain Current (ID)
24A
RoHS Status
ROHS3 Compliant

Description

IXFH24N60X Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1910pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 24A. Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFH24N60X Features
a continuous drain current (ID) of 24A
a 600V drain to source voltage (Vdss)

IXFH24N60X Applications
There are a lot of IXYS
IXFH24N60X applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

IXFH24N60X More Descriptions

MOSFET N-CH 600V 24A TO247-3
OEMs, CMs ONLY (NO BROKERS)
new, original packaged

Product Comparison

The three parts on the right have similar specifications to IXFH24N60X.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

RoHS Status

Number of Pins

Transistor Element Material

Pbfree Code

Number of Terminations

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

JESD-609 Code

ECCN Code

Terminal Finish

Additional Feature

Voltage - Rated DC

Current Rating

Number of Channels

Turn On Delay Time

Transistor Application

Threshold Voltage

Max Junction Temperature (Tj)

Height

Lead Free

JESD-30 Code

DS Breakdown Voltage-Min

View Compare
IXFH24N60X

IXYS

19 Weeks

Through Hole

Through Hole

TO-247-3

-55°C~150°C TJ

Tube

HiPerFET™

2015

Active

1 (Unlimited)

MOSFET (Metal Oxide)

400W Tc

N-Channel

175m Ω @ 12A, 10V

4.5V @ 2.5mA

1910pF @ 25V

24A Tc

47nC @ 10V

600V

10V

±30V

24A

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IXFH23N80Q

IXYS

-

Through Hole

Through Hole

TO-247-3

-55°C~150°C TJ

Tube

HiPerFET™

2004

Active

1 (Unlimited)

MOSFET (Metal Oxide)

500W Tc

N-Channel

420m Ω @ 500mA, 10V

4.5V @ 3mA

4900pF @ 25V

23A Tc

130nC @ 10V

-

10V

±30V

23A

ROHS3 Compliant

3

SILICON

yes

3

NOT SPECIFIED

unknown

NOT SPECIFIED

3

Not Qualified

1

Single

ENHANCEMENT MODE

500W

DRAIN

27ns

14 ns

74 ns

TO-247AD

30V

0.4Ohm

800V

92A

1500 mJ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IXFH24N60X vs IXFH23N80Q
IXFH22N60P

IXYS

30 Weeks

Through Hole

Through Hole

TO-247-3

-55°C~150°C TJ

Tube

HiPerFET™, PolarHT™

2006

Active

1 (Unlimited)

MOSFET (Metal Oxide)

400W Tc

N-Channel

350m Ω @ 11A, 10V

5.5V @ 4mA

3600pF @ 25V

22A Tc

58nC @ 10V

-

10V

±30V

22A

ROHS3 Compliant

3

SILICON

yes

3

NOT SPECIFIED

-

NOT SPECIFIED

3

Not Qualified

1

Single

ENHANCEMENT MODE

400W

DRAIN

20ns

23 ns

60 ns

TO-247AD

30V

-

600V

66A

-

e1

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

AVALANCHE RATED

600V

22A

1

20 ns

SWITCHING

5.5V

150°C

25.96mm

Lead Free

-

-

IXFH24N60X vs IXFH22N60P
IXFH110N15T2

IXYS

30 Weeks

Through Hole

Through Hole

TO-247-3

-55°C~175°C TJ

Tube

TrenchT2™

2008

Active

1 (Unlimited)

MOSFET (Metal Oxide)

480W Tc

N-Channel

13m Ω @ 500mA, 10V

4.5V @ 250μA

8600pF @ 25V

110A Tc

150nC @ 10V

150V

10V

±20V

110A

ROHS3 Compliant

-

SILICON

yes

3

NOT SPECIFIED

unknown

NOT SPECIFIED

3

Not Qualified

1

Single

ENHANCEMENT MODE

480W

DRAIN

16ns

18 ns

33 ns

TO-247AD

-

0.013Ohm

-

300A

800 mJ

e1

EAR99

TIN SILVER COPPER

AVALANCHE RATED

-

-

-

-

SWITCHING

-

-

-

-

R-PSFM-T3

150V

IXFH24N60X vs IXFH110N15T2