IXYS IXFH110N15T2
- Part Number:
- IXFH110N15T2
- Manufacturer:
- IXYS
- Ventron No:
- 2850671-IXFH110N15T2
- Description:
- MOSFET N-CH 150V 110A TO-247
- Datasheet:
- IXFH110N15T2
IXYS IXFH110N15T2 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFH110N15T2.
- Factory Lead Time30 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesTrenchT2™
- Published2008
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- Additional FeatureAVALANCHE RATED
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max480W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation480W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs13m Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds8600pF @ 25V
- Current - Continuous Drain (Id) @ 25°C110A Tc
- Gate Charge (Qg) (Max) @ Vgs150nC @ 10V
- Rise Time16ns
- Drain to Source Voltage (Vdss)150V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)18 ns
- Turn-Off Delay Time33 ns
- Continuous Drain Current (ID)110A
- JEDEC-95 CodeTO-247AD
- Drain-source On Resistance-Max0.013Ohm
- Pulsed Drain Current-Max (IDM)300A
- DS Breakdown Voltage-Min150V
- Avalanche Energy Rating (Eas)800 mJ
- RoHS StatusROHS3 Compliant
IXFH110N15T2 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 800 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8600pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.A maximum pulsed drain current of 300A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFH110N15T2 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 110A
the turn-off delay time is 33 ns
based on its rated peak drain current 300A.
a 150V drain to source voltage (Vdss)
IXFH110N15T2 Applications
There are a lot of IXYS
IXFH110N15T2 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 800 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8600pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.A maximum pulsed drain current of 300A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFH110N15T2 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 110A
the turn-off delay time is 33 ns
based on its rated peak drain current 300A.
a 150V drain to source voltage (Vdss)
IXFH110N15T2 Applications
There are a lot of IXYS
IXFH110N15T2 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IXFH110N15T2 More Descriptions
MOSFET N-CH 150V 110A TO247AD
OEMs, CMs ONLY (NO BROKERS)
new, original packaged
Contact for details
OEMs, CMs ONLY (NO BROKERS)
new, original packaged
Contact for details
The three parts on the right have similar specifications to IXFH110N15T2.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusNumber of PinsWeightTerminationResistanceHTS CodeSubcategoryVoltage - Rated DCCurrent RatingReverse Recovery TimeThreshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsREACH SVHCLead FreeTurn On Delay TimeHeightLengthWidthRadiation HardeningView Compare
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IXFH110N15T230 WeeksThrough HoleThrough HoleTO-247-3SILICON-55°C~175°C TJTubeTrenchT2™2008e1yesActive1 (Unlimited)3EAR99TIN SILVER COPPERAVALANCHE RATEDMOSFET (Metal Oxide)NOT SPECIFIEDunknownNOT SPECIFIED3R-PSFM-T3Not Qualified1480W TcSingleENHANCEMENT MODE480WDRAINN-ChannelSWITCHING13m Ω @ 500mA, 10V4.5V @ 250μA8600pF @ 25V110A Tc150nC @ 10V16ns150V10V±20V18 ns33 ns110ATO-247AD0.013Ohm300A150V800 mJROHS3 Compliant----------------------
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-Through HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTubeHiPerFET™2000e1yesObsoleteNot Applicable3EAR99Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDMOSFET (Metal Oxide)NOT SPECIFIED-NOT SPECIFIED3-Not Qualified1300W TcSingleENHANCEMENT MODE300WDRAINN-ChannelSWITCHING350m Ω @ 10A, 10V4.5V @ 4mA4500pF @ 25V20A Tc170nC @ 10V43ns-10V±20V40 ns70 ns20A--80A--RoHS Compliant36gThrough Hole350MOhm8541.29.00.95FET General Purpose Power600V20A250 ns4.5V20V600V600V4.5 VNo SVHCLead Free-----
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30 WeeksThrough HoleThrough HoleTO-247-3SILICON-55°C~175°C TJTubeHiPerFET™, PolarP2™2006e1yesActive1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDMOSFET (Metal Oxide)---3--1715W TcSingleENHANCEMENT MODE714WDRAINN-ChannelSWITCHING9m Ω @ 500mA, 10V5V @ 4mA6000pF @ 25V170A Tc198nC @ 10V50ns-10V±20V33 ns90 ns170ATO-247AD---2000 mJROHS3 Compliant3--9MOhm-FET General Purpose Power---5V20V100V--No SVHCLead Free35 ns21.46mm16.26mm5.3mmNo
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24 WeeksThrough HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTubeHiPerFET™, Polar3™2011--Active1 (Unlimited)3--AVALANCHE RATEDMOSFET (Metal Oxide)---3--1327W TcSingleENHANCEMENT MODE-DRAINN-ChannelSWITCHING540m Ω @ 7A, 10V5V @ 1mA1480pF @ 25V14A Tc25nC @ 10V-600V10V±30V-43 ns14ATO-247AD0.54Ohm-600V700 mJROHS3 Compliant3----FET General Purpose Power----30V-----21 ns21.46mm16.26mm5.3mm-
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