IXFH110N15T2

IXYS IXFH110N15T2

Part Number:
IXFH110N15T2
Manufacturer:
IXYS
Ventron No:
2850671-IXFH110N15T2
Description:
MOSFET N-CH 150V 110A TO-247
ECAD Model:
Datasheet:
IXFH110N15T2

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Specifications
IXYS IXFH110N15T2 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFH110N15T2.
  • Factory Lead Time
    30 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    TrenchT2™
  • Published
    2008
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN SILVER COPPER
  • Additional Feature
    AVALANCHE RATED
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    480W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    480W
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    13m Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    8600pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    110A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    150nC @ 10V
  • Rise Time
    16ns
  • Drain to Source Voltage (Vdss)
    150V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    18 ns
  • Turn-Off Delay Time
    33 ns
  • Continuous Drain Current (ID)
    110A
  • JEDEC-95 Code
    TO-247AD
  • Drain-source On Resistance-Max
    0.013Ohm
  • Pulsed Drain Current-Max (IDM)
    300A
  • DS Breakdown Voltage-Min
    150V
  • Avalanche Energy Rating (Eas)
    800 mJ
  • RoHS Status
    ROHS3 Compliant
Description
IXFH110N15T2 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 800 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8600pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.A maximum pulsed drain current of 300A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFH110N15T2 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 110A
the turn-off delay time is 33 ns
based on its rated peak drain current 300A.
a 150V drain to source voltage (Vdss)


IXFH110N15T2 Applications
There are a lot of IXYS
IXFH110N15T2 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IXFH110N15T2 More Descriptions
MOSFET N-CH 150V 110A TO247AD
OEMs, CMs ONLY (NO BROKERS)
new, original packaged
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXFH110N15T2.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Technology
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Number of Pins
    Weight
    Termination
    Resistance
    HTS Code
    Subcategory
    Voltage - Rated DC
    Current Rating
    Reverse Recovery Time
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    REACH SVHC
    Lead Free
    Turn On Delay Time
    Height
    Length
    Width
    Radiation Hardening
    View Compare
  • IXFH110N15T2
    IXFH110N15T2
    30 Weeks
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    -55°C~175°C TJ
    Tube
    TrenchT2™
    2008
    e1
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    TIN SILVER COPPER
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    3
    R-PSFM-T3
    Not Qualified
    1
    480W Tc
    Single
    ENHANCEMENT MODE
    480W
    DRAIN
    N-Channel
    SWITCHING
    13m Ω @ 500mA, 10V
    4.5V @ 250μA
    8600pF @ 25V
    110A Tc
    150nC @ 10V
    16ns
    150V
    10V
    ±20V
    18 ns
    33 ns
    110A
    TO-247AD
    0.013Ohm
    300A
    150V
    800 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXFH20N60
    -
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2000
    e1
    yes
    Obsolete
    Not Applicable
    3
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    -
    NOT SPECIFIED
    3
    -
    Not Qualified
    1
    300W Tc
    Single
    ENHANCEMENT MODE
    300W
    DRAIN
    N-Channel
    SWITCHING
    350m Ω @ 10A, 10V
    4.5V @ 4mA
    4500pF @ 25V
    20A Tc
    170nC @ 10V
    43ns
    -
    10V
    ±20V
    40 ns
    70 ns
    20A
    -
    -
    80A
    -
    -
    RoHS Compliant
    3
    6g
    Through Hole
    350MOhm
    8541.29.00.95
    FET General Purpose Power
    600V
    20A
    250 ns
    4.5V
    20V
    600V
    600V
    4.5 V
    No SVHC
    Lead Free
    -
    -
    -
    -
    -
  • IXFH170N10P
    30 Weeks
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    -55°C~175°C TJ
    Tube
    HiPerFET™, PolarP2™
    2006
    e1
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    -
    -
    -
    3
    -
    -
    1
    715W Tc
    Single
    ENHANCEMENT MODE
    714W
    DRAIN
    N-Channel
    SWITCHING
    9m Ω @ 500mA, 10V
    5V @ 4mA
    6000pF @ 25V
    170A Tc
    198nC @ 10V
    50ns
    -
    10V
    ±20V
    33 ns
    90 ns
    170A
    TO-247AD
    -
    -
    -
    2000 mJ
    ROHS3 Compliant
    3
    -
    -
    9MOhm
    -
    FET General Purpose Power
    -
    -
    -
    5V
    20V
    100V
    -
    -
    No SVHC
    Lead Free
    35 ns
    21.46mm
    16.26mm
    5.3mm
    No
  • IXFH14N60P3
    24 Weeks
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™, Polar3™
    2011
    -
    -
    Active
    1 (Unlimited)
    3
    -
    -
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    -
    -
    -
    3
    -
    -
    1
    327W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    N-Channel
    SWITCHING
    540m Ω @ 7A, 10V
    5V @ 1mA
    1480pF @ 25V
    14A Tc
    25nC @ 10V
    -
    600V
    10V
    ±30V
    -
    43 ns
    14A
    TO-247AD
    0.54Ohm
    -
    600V
    700 mJ
    ROHS3 Compliant
    3
    -
    -
    -
    -
    FET General Purpose Power
    -
    -
    -
    -
    30V
    -
    -
    -
    -
    -
    21 ns
    21.46mm
    16.26mm
    5.3mm
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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