IXYS IXFH170N10P
- Part Number:
- IXFH170N10P
- Manufacturer:
- IXYS
- Ventron No:
- 2851061-IXFH170N10P
- Description:
- MOSFET N-CH 100V 170A TO-247
- Datasheet:
- IXFH170N10P
IXYS IXFH170N10P technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFH170N10P.
- Factory Lead Time30 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHiPerFET™, PolarP2™
- Published2006
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance9MOhm
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Pin Count3
- Number of Elements1
- Power Dissipation-Max715W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation714W
- Case ConnectionDRAIN
- Turn On Delay Time35 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs9m Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id5V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds6000pF @ 25V
- Current - Continuous Drain (Id) @ 25°C170A Tc
- Gate Charge (Qg) (Max) @ Vgs198nC @ 10V
- Rise Time50ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)33 ns
- Turn-Off Delay Time90 ns
- Continuous Drain Current (ID)170A
- Threshold Voltage5V
- JEDEC-95 CodeTO-247AD
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Avalanche Energy Rating (Eas)2000 mJ
- Height21.46mm
- Length16.26mm
- Width5.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXFH170N10P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6000pF @ 25V.This device conducts a continuous drain current (ID) of 170A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 90 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 35 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 5V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFH170N10P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 170A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 90 ns
a threshold voltage of 5V
IXFH170N10P Applications
There are a lot of IXYS
IXFH170N10P applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6000pF @ 25V.This device conducts a continuous drain current (ID) of 170A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 90 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 35 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 5V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFH170N10P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 170A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 90 ns
a threshold voltage of 5V
IXFH170N10P Applications
There are a lot of IXYS
IXFH170N10P applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IXFH170N10P More Descriptions
Single N-Channel 100 Vds 9 mOhm 714 W Power Mosfet - TO-247
100V 715W 5V@4mA 730pF@25V N Channel 6nF@25V 198nC@10V -55¡Í~ 175¡Í@(Tj) TO-247AD MOSFETs ROHS
Trans MOSFET N-CH 100V 170A 3-Pin(3 Tab) TO-247AD
MOSFET, Single - N-Channel, 100V, 170A, 715W, TO-247
Mosfet, N, To-247; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:170A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:15V; Gate Source Threshold Voltage Max:5V; Power Dissipation:714W Rohs Compliant: Yes |Ixys Semiconductor IXFH170N10P
100V 715W 5V@4mA 730pF@25V N Channel 6nF@25V 198nC@10V -55¡Í~ 175¡Í@(Tj) TO-247AD MOSFETs ROHS
Trans MOSFET N-CH 100V 170A 3-Pin(3 Tab) TO-247AD
MOSFET, Single - N-Channel, 100V, 170A, 715W, TO-247
Mosfet, N, To-247; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:170A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:15V; Gate Source Threshold Voltage Max:5V; Power Dissipation:714W Rohs Compliant: Yes |Ixys Semiconductor IXFH170N10P
The three parts on the right have similar specifications to IXFH170N10P.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryTechnologyPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Qualification StatusDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)JESD-30 CodeDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinView Compare
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IXFH170N10P30 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~175°C TJTubeHiPerFET™, PolarP2™2006e1yesActive1 (Unlimited)3EAR999MOhmTin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)31715W TcSingleENHANCEMENT MODE714WDRAIN35 nsN-ChannelSWITCHING9m Ω @ 500mA, 10V5V @ 4mA6000pF @ 25V170A Tc198nC @ 10V50ns10V±20V33 ns90 ns170A5VTO-247AD20V100V2000 mJ21.46mm16.26mm5.3mmNo SVHCNoROHS3 CompliantLead Free----------
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-Through HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™2004-yesActive1 (Unlimited)3-----MOSFET (Metal Oxide)31500W TcSingleENHANCEMENT MODE500WDRAIN-N-Channel-420m Ω @ 500mA, 10V4.5V @ 3mA4900pF @ 25V23A Tc130nC @ 10V27ns10V±30V14 ns74 ns23A-TO-247AD30V800V1500 mJ-----ROHS3 Compliant-NOT SPECIFIEDunknownNOT SPECIFIEDNot Qualified0.4Ohm92A---
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30 WeeksThrough HoleThrough HoleTO-247-3-SILICON-55°C~175°C TJTubeHiPerFET™, PolarHT™2006e1yesActive1 (Unlimited)3EAR9911MOhmTin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATED-MOSFET (Metal Oxide)31600W TcSingleENHANCEMENT MODE600WDRAIN-N-ChannelSWITCHING11m Ω @ 70A, 10V5V @ 4mA4700pF @ 25V140A Tc155nC @ 10V50ns10V±20V26 ns85 ns140A-TO-247AD20V100V2500 mJ----NoROHS3 CompliantLead Free-----300AR-PSFM-T3--
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30 WeeksThrough HoleThrough HoleTO-247-3-SILICON-55°C~175°C TJTubeTrenchT2™2008e1yesActive1 (Unlimited)3EAR99-TIN SILVER COPPERAVALANCHE RATED-MOSFET (Metal Oxide)31480W TcSingleENHANCEMENT MODE480WDRAIN-N-ChannelSWITCHING13m Ω @ 500mA, 10V4.5V @ 250μA8600pF @ 25V110A Tc150nC @ 10V16ns10V±20V18 ns33 ns110A-TO-247AD--800 mJ-----ROHS3 Compliant-NOT SPECIFIEDunknownNOT SPECIFIEDNot Qualified0.013Ohm300AR-PSFM-T3150V150V
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