IXFH14N60P3

IXYS IXFH14N60P3

Part Number:
IXFH14N60P3
Manufacturer:
IXYS
Ventron No:
2850549-IXFH14N60P3
Description:
MOSFET N-CH 600V 14A TO-247
ECAD Model:
Datasheet:
IXFH14N60P3

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Specifications
IXYS IXFH14N60P3 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFH14N60P3.
  • Factory Lead Time
    24 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HiPerFET™, Polar3™
  • Published
    2011
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    327W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    21 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    540m Ω @ 7A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    1480pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    14A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    25nC @ 10V
  • Drain to Source Voltage (Vdss)
    600V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Turn-Off Delay Time
    43 ns
  • Continuous Drain Current (ID)
    14A
  • JEDEC-95 Code
    TO-247AD
  • Gate to Source Voltage (Vgs)
    30V
  • Drain-source On Resistance-Max
    0.54Ohm
  • DS Breakdown Voltage-Min
    600V
  • Avalanche Energy Rating (Eas)
    700 mJ
  • Height
    21.46mm
  • Length
    16.26mm
  • Width
    5.3mm
  • RoHS Status
    ROHS3 Compliant
Description
IXFH14N60P3 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 700 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1480pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 14A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 43 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 21 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 600V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFH14N60P3 Features
the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 14A
the turn-off delay time is 43 ns
a 600V drain to source voltage (Vdss)


IXFH14N60P3 Applications
There are a lot of IXYS
IXFH14N60P3 applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IXFH14N60P3 More Descriptions
MOSFET N-CH 600V 14A TO247AD
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to IXFH14N60P3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Additional Feature
    Subcategory
    Technology
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    RoHS Status
    Weight
    JESD-609 Code
    Pbfree Code
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    HTS Code
    Voltage - Rated DC
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Power Dissipation
    Rise Time
    Fall Time (Typ)
    Reverse Recovery Time
    Threshold Voltage
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Nominal Vgs
    REACH SVHC
    Lead Free
    Reach Compliance Code
    View Compare
  • IXFH14N60P3
    IXFH14N60P3
    24 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™, Polar3™
    2011
    Active
    1 (Unlimited)
    3
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    3
    1
    327W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    21 ns
    N-Channel
    SWITCHING
    540m Ω @ 7A, 10V
    5V @ 1mA
    1480pF @ 25V
    14A Tc
    25nC @ 10V
    600V
    10V
    ±30V
    43 ns
    14A
    TO-247AD
    30V
    0.54Ohm
    600V
    700 mJ
    21.46mm
    16.26mm
    5.3mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXFH20N60
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2000
    Obsolete
    Not Applicable
    3
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    3
    1
    300W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    -
    N-Channel
    SWITCHING
    350m Ω @ 10A, 10V
    4.5V @ 4mA
    4500pF @ 25V
    20A Tc
    170nC @ 10V
    -
    10V
    ±20V
    70 ns
    20A
    -
    20V
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    6g
    e1
    yes
    Through Hole
    EAR99
    350MOhm
    Tin/Silver/Copper (Sn/Ag/Cu)
    8541.29.00.95
    600V
    NOT SPECIFIED
    20A
    NOT SPECIFIED
    Not Qualified
    300W
    43ns
    40 ns
    250 ns
    4.5V
    600V
    80A
    600V
    4.5 V
    No SVHC
    Lead Free
    -
  • IXFH23N80Q
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2004
    Active
    1 (Unlimited)
    3
    -
    -
    MOSFET (Metal Oxide)
    3
    1
    500W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    -
    N-Channel
    -
    420m Ω @ 500mA, 10V
    4.5V @ 3mA
    4900pF @ 25V
    23A Tc
    130nC @ 10V
    -
    10V
    ±30V
    74 ns
    23A
    TO-247AD
    30V
    0.4Ohm
    -
    1500 mJ
    -
    -
    -
    ROHS3 Compliant
    -
    -
    yes
    -
    -
    -
    -
    -
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    Not Qualified
    500W
    27ns
    14 ns
    -
    -
    800V
    92A
    -
    -
    -
    -
    unknown
  • IXFH24N60X
    19 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -
    -
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2015
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    400W Tc
    -
    -
    -
    -
    N-Channel
    -
    175m Ω @ 12A, 10V
    4.5V @ 2.5mA
    1910pF @ 25V
    24A Tc
    47nC @ 10V
    600V
    10V
    ±30V
    -
    24A
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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