IXYS IXFH14N60P3
- Part Number:
- IXFH14N60P3
- Manufacturer:
- IXYS
- Ventron No:
- 2850549-IXFH14N60P3
- Description:
- MOSFET N-CH 600V 14A TO-247
- Datasheet:
- IXFH14N60P3
IXYS IXFH14N60P3 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFH14N60P3.
- Factory Lead Time24 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHiPerFET™, Polar3™
- Published2011
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Pin Count3
- Number of Elements1
- Power Dissipation-Max327W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time21 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs540m Ω @ 7A, 10V
- Vgs(th) (Max) @ Id5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds1480pF @ 25V
- Current - Continuous Drain (Id) @ 25°C14A Tc
- Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Turn-Off Delay Time43 ns
- Continuous Drain Current (ID)14A
- JEDEC-95 CodeTO-247AD
- Gate to Source Voltage (Vgs)30V
- Drain-source On Resistance-Max0.54Ohm
- DS Breakdown Voltage-Min600V
- Avalanche Energy Rating (Eas)700 mJ
- Height21.46mm
- Length16.26mm
- Width5.3mm
- RoHS StatusROHS3 Compliant
IXFH14N60P3 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 700 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1480pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 14A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 43 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 21 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 600V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFH14N60P3 Features
the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 14A
the turn-off delay time is 43 ns
a 600V drain to source voltage (Vdss)
IXFH14N60P3 Applications
There are a lot of IXYS
IXFH14N60P3 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 700 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1480pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 14A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 43 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 21 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 600V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFH14N60P3 Features
the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 14A
the turn-off delay time is 43 ns
a 600V drain to source voltage (Vdss)
IXFH14N60P3 Applications
There are a lot of IXYS
IXFH14N60P3 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IXFH14N60P3 More Descriptions
MOSFET N-CH 600V 14A TO247AD
French Electronic Distributor since 1988
French Electronic Distributor since 1988
The three parts on the right have similar specifications to IXFH14N60P3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureSubcategoryTechnologyPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDS Breakdown Voltage-MinAvalanche Energy Rating (Eas)HeightLengthWidthRoHS StatusWeightJESD-609 CodePbfree CodeTerminationECCN CodeResistanceTerminal FinishHTS CodeVoltage - Rated DCPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Qualification StatusPower DissipationRise TimeFall Time (Typ)Reverse Recovery TimeThreshold VoltageDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageNominal VgsREACH SVHCLead FreeReach Compliance CodeView Compare
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IXFH14N60P324 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™, Polar3™2011Active1 (Unlimited)3AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)31327W TcSingleENHANCEMENT MODEDRAIN21 nsN-ChannelSWITCHING540m Ω @ 7A, 10V5V @ 1mA1480pF @ 25V14A Tc25nC @ 10V600V10V±30V43 ns14ATO-247AD30V0.54Ohm600V700 mJ21.46mm16.26mm5.3mmROHS3 Compliant--------------------------
-
-Through HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™2000ObsoleteNot Applicable3AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)31300W TcSingleENHANCEMENT MODEDRAIN-N-ChannelSWITCHING350m Ω @ 10A, 10V4.5V @ 4mA4500pF @ 25V20A Tc170nC @ 10V-10V±20V70 ns20A-20V------RoHS Compliant6ge1yesThrough HoleEAR99350MOhmTin/Silver/Copper (Sn/Ag/Cu)8541.29.00.95600VNOT SPECIFIED20ANOT SPECIFIEDNot Qualified300W43ns40 ns250 ns4.5V600V80A600V4.5 VNo SVHCLead Free-
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-Through HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™2004Active1 (Unlimited)3--MOSFET (Metal Oxide)31500W TcSingleENHANCEMENT MODEDRAIN-N-Channel-420m Ω @ 500mA, 10V4.5V @ 3mA4900pF @ 25V23A Tc130nC @ 10V-10V±30V74 ns23ATO-247AD30V0.4Ohm-1500 mJ---ROHS3 Compliant--yes------NOT SPECIFIED-NOT SPECIFIEDNot Qualified500W27ns14 ns--800V92A----unknown
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19 WeeksThrough HoleThrough HoleTO-247-3---55°C~150°C TJTubeHiPerFET™2015Active1 (Unlimited)---MOSFET (Metal Oxide)--400W Tc----N-Channel-175m Ω @ 12A, 10V4.5V @ 2.5mA1910pF @ 25V24A Tc47nC @ 10V600V10V±30V-24A--------ROHS3 Compliant-------------------------
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