IXYS IXFH140N10P
- Part Number:
- IXFH140N10P
- Manufacturer:
- IXYS
- Ventron No:
- 2850843-IXFH140N10P
- Description:
- MOSFET N-CH 100V 140A TO-247
- Datasheet:
- IXFH140N10P
IXYS IXFH140N10P technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFH140N10P.
- Factory Lead Time30 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHiPerFET™, PolarHT™
- Published2006
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance11MOhm
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAVALANCHE RATED
- TechnologyMOSFET (Metal Oxide)
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- Power Dissipation-Max600W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation600W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs11m Ω @ 70A, 10V
- Vgs(th) (Max) @ Id5V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds4700pF @ 25V
- Current - Continuous Drain (Id) @ 25°C140A Tc
- Gate Charge (Qg) (Max) @ Vgs155nC @ 10V
- Rise Time50ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)26 ns
- Turn-Off Delay Time85 ns
- Continuous Drain Current (ID)140A
- JEDEC-95 CodeTO-247AD
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Pulsed Drain Current-Max (IDM)300A
- Avalanche Energy Rating (Eas)2500 mJ
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXFH140N10P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The maximum input capacitance of this device is 4700pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 140A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 85 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 300A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
IXFH140N10P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 140A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 300A.
IXFH140N10P Applications
There are a lot of IXYS
IXFH140N10P applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The maximum input capacitance of this device is 4700pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 140A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 85 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 300A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
IXFH140N10P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 140A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 300A.
IXFH140N10P Applications
There are a lot of IXYS
IXFH140N10P applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IXFH140N10P More Descriptions
Single N-Channel 100 Vds 11 mOhm 600 W Power Mosfet - TO-247
Trans MOSFET N-CH 100V 140A 3-Pin(3 Tab) TO-247
MOSFET, N, TO-247; Transistor Type:HiPerFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:140A; Resistance, Rds On:0.011ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-247; Termination Type:Through Hole; N-channel Gate Charge:155nC; No. of Pins:3; Power, Pd:600W; Thermal Resistance, Junction to Case A:0.25°C/W; Typ Capacitance Ciss:4700pF; Voltage, Vds Max:100V; Time, trr Max:150ns
Trans MOSFET N-CH 100V 140A 3-Pin(3 Tab) TO-247
MOSFET, N, TO-247; Transistor Type:HiPerFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:140A; Resistance, Rds On:0.011ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-247; Termination Type:Through Hole; N-channel Gate Charge:155nC; No. of Pins:3; Power, Pd:600W; Thermal Resistance, Junction to Case A:0.25°C/W; Typ Capacitance Ciss:4700pF; Voltage, Vds Max:100V; Time, trr Max:150ns
The three parts on the right have similar specifications to IXFH140N10P.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureTechnologyPin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Radiation HardeningRoHS StatusLead FreeNumber of PinsPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Qualification StatusDrain-source On Resistance-MaxVoltage - Rated DCCurrent RatingNumber of ChannelsTurn On Delay TimeThreshold VoltageMax Junction Temperature (Tj)HeightSubcategoryDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinLengthWidthView Compare
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IXFH140N10P30 WeeksThrough HoleThrough HoleTO-247-3SILICON-55°C~175°C TJTubeHiPerFET™, PolarHT™2006e1yesActive1 (Unlimited)3EAR9911MOhmTin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDMOSFET (Metal Oxide)3R-PSFM-T31600W TcSingleENHANCEMENT MODE600WDRAINN-ChannelSWITCHING11m Ω @ 70A, 10V5V @ 4mA4700pF @ 25V140A Tc155nC @ 10V50ns10V±20V26 ns85 ns140ATO-247AD20V100V300A2500 mJNoROHS3 CompliantLead Free-------------------
-
-Through HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTubeHiPerFET™2004-yesActive1 (Unlimited)3----MOSFET (Metal Oxide)3-1500W TcSingleENHANCEMENT MODE500WDRAINN-Channel-420m Ω @ 500mA, 10V4.5V @ 3mA4900pF @ 25V23A Tc130nC @ 10V27ns10V±30V14 ns74 ns23ATO-247AD30V800V92A1500 mJ-ROHS3 Compliant-3NOT SPECIFIEDunknownNOT SPECIFIEDNot Qualified0.4Ohm------------
-
30 WeeksThrough HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTubeHiPerFET™, PolarHT™2006e1yesActive1 (Unlimited)3EAR99-Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDMOSFET (Metal Oxide)3-1400W TcSingleENHANCEMENT MODE400WDRAINN-ChannelSWITCHING350m Ω @ 11A, 10V5.5V @ 4mA3600pF @ 25V22A Tc58nC @ 10V20ns10V±30V23 ns60 ns22ATO-247AD30V600V66A--ROHS3 CompliantLead Free3NOT SPECIFIED-NOT SPECIFIEDNot Qualified-600V22A120 ns5.5V150°C25.96mm-----
-
24 WeeksThrough HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTubeHiPerFET™, Polar3™2011--Active1 (Unlimited)3---AVALANCHE RATEDMOSFET (Metal Oxide)3-1327W TcSingleENHANCEMENT MODE-DRAINN-ChannelSWITCHING540m Ω @ 7A, 10V5V @ 1mA1480pF @ 25V14A Tc25nC @ 10V-10V±30V-43 ns14ATO-247AD30V--700 mJ-ROHS3 Compliant-3----0.54Ohm---21 ns--21.46mmFET General Purpose Power600V600V16.26mm5.3mm
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