IXFH15N60

IXYS IXFH15N60

Part Number:
IXFH15N60
Manufacturer:
IXYS
Ventron No:
2851361-IXFH15N60
Description:
MOSFET N-CH 600V 15A TO-247AD
ECAD Model:
Datasheet:
IXFH/IXFM(15,20)N60

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Specifications
IXYS IXFH15N60 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFH15N60.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HiPerFET™
  • Published
    2000
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    Not Applicable
  • Number of Terminations
    3
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    600V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Current Rating
    15A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    300W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    300W
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    500m Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 4mA
  • Input Capacitance (Ciss) (Max) @ Vds
    4500pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    15A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    170nC @ 10V
  • Rise Time
    43ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    40 ns
  • Turn-Off Delay Time
    70 ns
  • Continuous Drain Current (ID)
    15A
  • JEDEC-95 Code
    TO-247AD
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.05Ohm
  • Drain to Source Breakdown Voltage
    600V
  • Pulsed Drain Current-Max (IDM)
    60A
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Lead Free
Description
IXFH15N60 Overview
The maximum input capacitance of this device is 4500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 15A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 60A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.

IXFH15N60 Features
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 60A.


IXFH15N60 Applications
There are a lot of IXYS
IXFH15N60 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IXFH15N60 More Descriptions
MOSFET N-CH 600V 15A TO-247AD
IC OPAMP VFB 2 CIRCUIT 8SOIC
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXFH15N60.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Subcategory
    Voltage - Rated DC
    Technology
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    RoHS Status
    Lead Free
    Reach Compliance Code
    Avalanche Energy Rating (Eas)
    Factory Lead Time
    JESD-609 Code
    ECCN Code
    Terminal Finish
    Additional Feature
    JESD-30 Code
    Drain to Source Voltage (Vdss)
    DS Breakdown Voltage-Min
    Turn On Delay Time
    Height
    Length
    Width
    View Compare
  • IXFH15N60
    IXFH15N60
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2000
    yes
    Obsolete
    Not Applicable
    3
    FET General Purpose Power
    600V
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    15A
    NOT SPECIFIED
    3
    Not Qualified
    1
    300W Tc
    Single
    ENHANCEMENT MODE
    300W
    DRAIN
    N-Channel
    SWITCHING
    500m Ω @ 500mA, 10V
    4.5V @ 4mA
    4500pF @ 25V
    15A Tc
    170nC @ 10V
    43ns
    10V
    ±20V
    40 ns
    70 ns
    15A
    TO-247AD
    20V
    0.05Ohm
    600V
    60A
    Non-RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXFH23N80Q
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2004
    yes
    Active
    1 (Unlimited)
    3
    -
    -
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    -
    NOT SPECIFIED
    3
    Not Qualified
    1
    500W Tc
    Single
    ENHANCEMENT MODE
    500W
    DRAIN
    N-Channel
    -
    420m Ω @ 500mA, 10V
    4.5V @ 3mA
    4900pF @ 25V
    23A Tc
    130nC @ 10V
    27ns
    10V
    ±30V
    14 ns
    74 ns
    23A
    TO-247AD
    30V
    0.4Ohm
    800V
    92A
    ROHS3 Compliant
    -
    unknown
    1500 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXFH110N15T2
    Through Hole
    Through Hole
    TO-247-3
    -
    SILICON
    -55°C~175°C TJ
    Tube
    TrenchT2™
    2008
    yes
    Active
    1 (Unlimited)
    3
    -
    -
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    -
    NOT SPECIFIED
    3
    Not Qualified
    1
    480W Tc
    Single
    ENHANCEMENT MODE
    480W
    DRAIN
    N-Channel
    SWITCHING
    13m Ω @ 500mA, 10V
    4.5V @ 250μA
    8600pF @ 25V
    110A Tc
    150nC @ 10V
    16ns
    10V
    ±20V
    18 ns
    33 ns
    110A
    TO-247AD
    -
    0.013Ohm
    -
    300A
    ROHS3 Compliant
    -
    unknown
    800 mJ
    30 Weeks
    e1
    EAR99
    TIN SILVER COPPER
    AVALANCHE RATED
    R-PSFM-T3
    150V
    150V
    -
    -
    -
    -
  • IXFH14N60P3
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™, Polar3™
    2011
    -
    Active
    1 (Unlimited)
    3
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    3
    -
    1
    327W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    N-Channel
    SWITCHING
    540m Ω @ 7A, 10V
    5V @ 1mA
    1480pF @ 25V
    14A Tc
    25nC @ 10V
    -
    10V
    ±30V
    -
    43 ns
    14A
    TO-247AD
    30V
    0.54Ohm
    -
    -
    ROHS3 Compliant
    -
    -
    700 mJ
    24 Weeks
    -
    -
    -
    AVALANCHE RATED
    -
    600V
    600V
    21 ns
    21.46mm
    16.26mm
    5.3mm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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