IXYS IXFH15N60
- Part Number:
- IXFH15N60
- Manufacturer:
- IXYS
- Ventron No:
- 2851361-IXFH15N60
- Description:
- MOSFET N-CH 600V 15A TO-247AD
- Datasheet:
- IXFH/IXFM(15,20)N60
IXYS IXFH15N60 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFH15N60.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHiPerFET™
- Published2000
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)Not Applicable
- Number of Terminations3
- SubcategoryFET General Purpose Power
- Voltage - Rated DC600V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating15A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max300W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs500m Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id4.5V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds4500pF @ 25V
- Current - Continuous Drain (Id) @ 25°C15A Tc
- Gate Charge (Qg) (Max) @ Vgs170nC @ 10V
- Rise Time43ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)40 ns
- Turn-Off Delay Time70 ns
- Continuous Drain Current (ID)15A
- JEDEC-95 CodeTO-247AD
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.05Ohm
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)60A
- RoHS StatusNon-RoHS Compliant
- Lead FreeLead Free
IXFH15N60 Overview
The maximum input capacitance of this device is 4500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 15A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 60A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
IXFH15N60 Features
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 60A.
IXFH15N60 Applications
There are a lot of IXYS
IXFH15N60 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 4500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 15A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 60A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
IXFH15N60 Features
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 60A.
IXFH15N60 Applications
There are a lot of IXYS
IXFH15N60 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IXFH15N60 More Descriptions
MOSFET N-CH 600V 15A TO-247AD
IC OPAMP VFB 2 CIRCUIT 8SOIC
Contact for details
IC OPAMP VFB 2 CIRCUIT 8SOIC
Contact for details
The three parts on the right have similar specifications to IXFH15N60.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)RoHS StatusLead FreeReach Compliance CodeAvalanche Energy Rating (Eas)Factory Lead TimeJESD-609 CodeECCN CodeTerminal FinishAdditional FeatureJESD-30 CodeDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinTurn On Delay TimeHeightLengthWidthView Compare
-
IXFH15N60Through HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™2000yesObsoleteNot Applicable3FET General Purpose Power600VMOSFET (Metal Oxide)NOT SPECIFIED15ANOT SPECIFIED3Not Qualified1300W TcSingleENHANCEMENT MODE300WDRAINN-ChannelSWITCHING500m Ω @ 500mA, 10V4.5V @ 4mA4500pF @ 25V15A Tc170nC @ 10V43ns10V±20V40 ns70 ns15ATO-247AD20V0.05Ohm600V60ANon-RoHS CompliantLead Free---------------
-
Through HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™2004yesActive1 (Unlimited)3--MOSFET (Metal Oxide)NOT SPECIFIED-NOT SPECIFIED3Not Qualified1500W TcSingleENHANCEMENT MODE500WDRAINN-Channel-420m Ω @ 500mA, 10V4.5V @ 3mA4900pF @ 25V23A Tc130nC @ 10V27ns10V±30V14 ns74 ns23ATO-247AD30V0.4Ohm800V92AROHS3 Compliant-unknown1500 mJ------------
-
Through HoleThrough HoleTO-247-3-SILICON-55°C~175°C TJTubeTrenchT2™2008yesActive1 (Unlimited)3--MOSFET (Metal Oxide)NOT SPECIFIED-NOT SPECIFIED3Not Qualified1480W TcSingleENHANCEMENT MODE480WDRAINN-ChannelSWITCHING13m Ω @ 500mA, 10V4.5V @ 250μA8600pF @ 25V110A Tc150nC @ 10V16ns10V±20V18 ns33 ns110ATO-247AD-0.013Ohm-300AROHS3 Compliant-unknown800 mJ30 Weekse1EAR99TIN SILVER COPPERAVALANCHE RATEDR-PSFM-T3150V150V----
-
Through HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™, Polar3™2011-Active1 (Unlimited)3FET General Purpose Power-MOSFET (Metal Oxide)---3-1327W TcSingleENHANCEMENT MODE-DRAINN-ChannelSWITCHING540m Ω @ 7A, 10V5V @ 1mA1480pF @ 25V14A Tc25nC @ 10V-10V±30V-43 ns14ATO-247AD30V0.54Ohm--ROHS3 Compliant--700 mJ24 Weeks---AVALANCHE RATED-600V600V21 ns21.46mm16.26mm5.3mm
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
15 March 2024
Detailed Explanation of 24C02 EEPROM Memory Chip
Ⅰ. Overview of 24C02Ⅱ. Functions of 24C02Ⅲ. Basic operations of 24C02Ⅳ. Application of 24C02Ⅴ. 24C02 pinoutⅥ. How to protect the data of 24C02?Ⅶ. How to use 24C02?EEPROM refers... -
18 March 2024
LM324N Internal Structure, Working Principle and LM324 vs LM324N
Ⅰ. Overview of LM324NⅡ. Internal structure and working principle of LM324NⅢ. Typical performance characteristics of LM324NⅣ. How to configure the power supply for LM324N?Ⅴ. Pin description of LM324NⅥ.... -
18 March 2024
TDA7377 Audio Power Amplifier Alternatives, Application and Other Details
Ⅰ. Overview of TDA7377Ⅱ. Performance evaluation of TDA7377Ⅲ. Internal circuit diagram of TDA7377Ⅳ. Application of TDA7377Ⅴ. PCB-layout grounding of TDA7377Ⅵ. TDA7377 power amplifier chip parametersⅦ. How to ensure... -
19 March 2024
HT1621B Alternatives, Brand, Usage and Other Details
Ⅰ. Overview of HT1621BⅡ. Which brand is HT1621B?Ⅲ. Pins and description of HT1621BⅣ. How to use HT1621B?Ⅴ. Application circuits of HT1621BⅥ. Tips for using HT1621BⅦ. How to set...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.