IXYS IXFH20N60
- Part Number:
- IXFH20N60
- Manufacturer:
- IXYS
- Ventron No:
- 2851383-IXFH20N60
- Description:
- MOSFET N-CH 600V 20A TO-247AD
- Datasheet:
- IXFH/IXFM(15,20)N60
IXYS IXFH20N60 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFH20N60.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight6g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHiPerFET™
- Published2000
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)Not Applicable
- Number of Terminations3
- TerminationThrough Hole
- ECCN CodeEAR99
- Resistance350MOhm
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAVALANCHE RATED
- HTS Code8541.29.00.95
- SubcategoryFET General Purpose Power
- Voltage - Rated DC600V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating20A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max300W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs350m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id4.5V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds4500pF @ 25V
- Current - Continuous Drain (Id) @ 25°C20A Tc
- Gate Charge (Qg) (Max) @ Vgs170nC @ 10V
- Rise Time43ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)40 ns
- Turn-Off Delay Time70 ns
- Reverse Recovery Time250 ns
- Continuous Drain Current (ID)20A
- Threshold Voltage4.5V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)80A
- Dual Supply Voltage600V
- Nominal Vgs4.5 V
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IXFH20N60 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4500pF @ 25V.This device conducts a continuous drain current (ID) of 20A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 70 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 80A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4.5V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFH20N60 Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 80A.
a threshold voltage of 4.5V
IXFH20N60 Applications
There are a lot of IXYS
IXFH20N60 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4500pF @ 25V.This device conducts a continuous drain current (ID) of 20A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 70 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 80A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4.5V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFH20N60 Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 80A.
a threshold voltage of 4.5V
IXFH20N60 Applications
There are a lot of IXYS
IXFH20N60 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IXFH20N60 More Descriptions
Trans MOSFET N-CH Si 600V 20A 3-Pin(3 Tab) TO-247AD
MOSFET, N, TO-247; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:20A; Resistance, Rds On:0.35ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4.5V; Case Style:TO-247; Termination ;RoHS Compliant: Yes
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):350mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247; No. of Pins:3; Current Id Max:20A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; N-channel Gate Charge:151nC; No. of Transistors:1; On State Resistance Max:350mohm; Package / Case:TO-247; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:60A; Rate of Voltage Change dv / dt:5V/ns; Repetitive Avalanche Energy Max:30mJ; Reverse Recovery Time trr Typ:250ns; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Weight:6g
MOSFET, N, TO-247; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:20A; Resistance, Rds On:0.35ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4.5V; Case Style:TO-247; Termination ;RoHS Compliant: Yes
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):350mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247; No. of Pins:3; Current Id Max:20A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; N-channel Gate Charge:151nC; No. of Transistors:1; On State Resistance Max:350mohm; Package / Case:TO-247; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:60A; Rate of Voltage Change dv / dt:5V/ns; Repetitive Avalanche Energy Max:30mJ; Reverse Recovery Time trr Typ:250ns; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Weight:6g
The three parts on the right have similar specifications to IXFH20N60.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishAdditional FeatureHTS CodeSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeReverse Recovery TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageNominal VgsREACH SVHCRoHS StatusLead FreeFactory Lead TimeTurn On Delay TimeJEDEC-95 CodeAvalanche Energy Rating (Eas)HeightLengthWidthRadiation HardeningNumber of ChannelsMax Junction Temperature (Tj)Reach Compliance CodeJESD-30 CodeDrain to Source Voltage (Vdss)Drain-source On Resistance-MaxDS Breakdown Voltage-MinView Compare
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IXFH20N60Through HoleThrough HoleTO-247-336gSILICON-55°C~150°C TJTubeHiPerFET™2000e1yesObsoleteNot Applicable3Through HoleEAR99350MOhmTin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATED8541.29.00.95FET General Purpose Power600VMOSFET (Metal Oxide)NOT SPECIFIED20ANOT SPECIFIED3Not Qualified1300W TcSingleENHANCEMENT MODE300WDRAINN-ChannelSWITCHING350m Ω @ 10A, 10V4.5V @ 4mA4500pF @ 25V20A Tc170nC @ 10V43ns10V±20V40 ns70 ns250 ns20A4.5V20V600V80A600V4.5 VNo SVHCRoHS CompliantLead Free----------------
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Through HoleThrough HoleTO-247-33-SILICON-55°C~175°C TJTubeHiPerFET™, PolarP2™2006e1yesActive1 (Unlimited)3-EAR999MOhmTin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATED-FET General Purpose Power-MOSFET (Metal Oxide)---3-1715W TcSingleENHANCEMENT MODE714WDRAINN-ChannelSWITCHING9m Ω @ 500mA, 10V5V @ 4mA6000pF @ 25V170A Tc198nC @ 10V50ns10V±20V33 ns90 ns-170A5V20V100V---No SVHCROHS3 CompliantLead Free30 Weeks35 nsTO-247AD2000 mJ21.46mm16.26mm5.3mmNo-------
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Through HoleThrough HoleTO-247-33-SILICON-55°C~150°C TJTubeHiPerFET™, PolarHT™2006e1yesActive1 (Unlimited)3-EAR99-Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATED--600VMOSFET (Metal Oxide)NOT SPECIFIED22ANOT SPECIFIED3Not Qualified1400W TcSingleENHANCEMENT MODE400WDRAINN-ChannelSWITCHING350m Ω @ 11A, 10V5.5V @ 4mA3600pF @ 25V22A Tc58nC @ 10V20ns10V±30V23 ns60 ns-22A5.5V30V600V66A---ROHS3 CompliantLead Free30 Weeks20 nsTO-247AD-25.96mm---1150°C-----
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Through HoleThrough HoleTO-247-3--SILICON-55°C~175°C TJTubeTrenchT2™2008e1yesActive1 (Unlimited)3-EAR99-TIN SILVER COPPERAVALANCHE RATED---MOSFET (Metal Oxide)NOT SPECIFIED-NOT SPECIFIED3Not Qualified1480W TcSingleENHANCEMENT MODE480WDRAINN-ChannelSWITCHING13m Ω @ 500mA, 10V4.5V @ 250μA8600pF @ 25V110A Tc150nC @ 10V16ns10V±20V18 ns33 ns-110A---300A---ROHS3 Compliant-30 Weeks-TO-247AD800 mJ------unknownR-PSFM-T3150V0.013Ohm150V
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