IXFH20N60

IXYS IXFH20N60

Part Number:
IXFH20N60
Manufacturer:
IXYS
Ventron No:
2851383-IXFH20N60
Description:
MOSFET N-CH 600V 20A TO-247AD
ECAD Model:
Datasheet:
IXFH/IXFM(15,20)N60

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Specifications
IXYS IXFH20N60 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFH20N60.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    6g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HiPerFET™
  • Published
    2000
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    Not Applicable
  • Number of Terminations
    3
  • Termination
    Through Hole
  • ECCN Code
    EAR99
  • Resistance
    350MOhm
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Additional Feature
    AVALANCHE RATED
  • HTS Code
    8541.29.00.95
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    600V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Current Rating
    20A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    300W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    300W
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    350m Ω @ 10A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 4mA
  • Input Capacitance (Ciss) (Max) @ Vds
    4500pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    20A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    170nC @ 10V
  • Rise Time
    43ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    40 ns
  • Turn-Off Delay Time
    70 ns
  • Reverse Recovery Time
    250 ns
  • Continuous Drain Current (ID)
    20A
  • Threshold Voltage
    4.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    600V
  • Pulsed Drain Current-Max (IDM)
    80A
  • Dual Supply Voltage
    600V
  • Nominal Vgs
    4.5 V
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IXFH20N60 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4500pF @ 25V.This device conducts a continuous drain current (ID) of 20A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 70 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 80A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4.5V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFH20N60 Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 80A.
a threshold voltage of 4.5V


IXFH20N60 Applications
There are a lot of IXYS
IXFH20N60 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IXFH20N60 More Descriptions
Trans MOSFET N-CH Si 600V 20A 3-Pin(3 Tab) TO-247AD
MOSFET, N, TO-247; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:20A; Resistance, Rds On:0.35ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4.5V; Case Style:TO-247; Termination ;RoHS Compliant: Yes
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):350mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247; No. of Pins:3; Current Id Max:20A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; N-channel Gate Charge:151nC; No. of Transistors:1; On State Resistance Max:350mohm; Package / Case:TO-247; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:60A; Rate of Voltage Change dv / dt:5V/ns; Repetitive Avalanche Energy Max:30mJ; Reverse Recovery Time trr Typ:250ns; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Weight:6g
Product Comparison
The three parts on the right have similar specifications to IXFH20N60.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    HTS Code
    Subcategory
    Voltage - Rated DC
    Technology
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Reverse Recovery Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Nominal Vgs
    REACH SVHC
    RoHS Status
    Lead Free
    Factory Lead Time
    Turn On Delay Time
    JEDEC-95 Code
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    Radiation Hardening
    Number of Channels
    Max Junction Temperature (Tj)
    Reach Compliance Code
    JESD-30 Code
    Drain to Source Voltage (Vdss)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    View Compare
  • IXFH20N60
    IXFH20N60
    Through Hole
    Through Hole
    TO-247-3
    3
    6g
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2000
    e1
    yes
    Obsolete
    Not Applicable
    3
    Through Hole
    EAR99
    350MOhm
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    8541.29.00.95
    FET General Purpose Power
    600V
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    20A
    NOT SPECIFIED
    3
    Not Qualified
    1
    300W Tc
    Single
    ENHANCEMENT MODE
    300W
    DRAIN
    N-Channel
    SWITCHING
    350m Ω @ 10A, 10V
    4.5V @ 4mA
    4500pF @ 25V
    20A Tc
    170nC @ 10V
    43ns
    10V
    ±20V
    40 ns
    70 ns
    250 ns
    20A
    4.5V
    20V
    600V
    80A
    600V
    4.5 V
    No SVHC
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXFH170N10P
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    SILICON
    -55°C~175°C TJ
    Tube
    HiPerFET™, PolarP2™
    2006
    e1
    yes
    Active
    1 (Unlimited)
    3
    -
    EAR99
    9MOhm
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    3
    -
    1
    715W Tc
    Single
    ENHANCEMENT MODE
    714W
    DRAIN
    N-Channel
    SWITCHING
    9m Ω @ 500mA, 10V
    5V @ 4mA
    6000pF @ 25V
    170A Tc
    198nC @ 10V
    50ns
    10V
    ±20V
    33 ns
    90 ns
    -
    170A
    5V
    20V
    100V
    -
    -
    -
    No SVHC
    ROHS3 Compliant
    Lead Free
    30 Weeks
    35 ns
    TO-247AD
    2000 mJ
    21.46mm
    16.26mm
    5.3mm
    No
    -
    -
    -
    -
    -
    -
    -
  • IXFH22N60P
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™, PolarHT™
    2006
    e1
    yes
    Active
    1 (Unlimited)
    3
    -
    EAR99
    -
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    -
    -
    600V
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    22A
    NOT SPECIFIED
    3
    Not Qualified
    1
    400W Tc
    Single
    ENHANCEMENT MODE
    400W
    DRAIN
    N-Channel
    SWITCHING
    350m Ω @ 11A, 10V
    5.5V @ 4mA
    3600pF @ 25V
    22A Tc
    58nC @ 10V
    20ns
    10V
    ±30V
    23 ns
    60 ns
    -
    22A
    5.5V
    30V
    600V
    66A
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    30 Weeks
    20 ns
    TO-247AD
    -
    25.96mm
    -
    -
    -
    1
    150°C
    -
    -
    -
    -
    -
  • IXFH110N15T2
    Through Hole
    Through Hole
    TO-247-3
    -
    -
    SILICON
    -55°C~175°C TJ
    Tube
    TrenchT2™
    2008
    e1
    yes
    Active
    1 (Unlimited)
    3
    -
    EAR99
    -
    TIN SILVER COPPER
    AVALANCHE RATED
    -
    -
    -
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    -
    NOT SPECIFIED
    3
    Not Qualified
    1
    480W Tc
    Single
    ENHANCEMENT MODE
    480W
    DRAIN
    N-Channel
    SWITCHING
    13m Ω @ 500mA, 10V
    4.5V @ 250μA
    8600pF @ 25V
    110A Tc
    150nC @ 10V
    16ns
    10V
    ±20V
    18 ns
    33 ns
    -
    110A
    -
    -
    -
    300A
    -
    -
    -
    ROHS3 Compliant
    -
    30 Weeks
    -
    TO-247AD
    800 mJ
    -
    -
    -
    -
    -
    -
    unknown
    R-PSFM-T3
    150V
    0.013Ohm
    150V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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