IXYS IXFH12N100F

IXFH12N100F Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2700pF @ 25V.This device conducts a continuous drain current (ID) of 12A, which is the maximum continuous current transistor can conduct.Using VGS=1kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1kV (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 31 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 48A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 1000V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFH12N100F Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 48A.
a threshold voltage of 3V
a 1000V drain to source voltage (Vdss)


IXFH12N100F Applications
There are a lot of IXYS
IXFH12N100F applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching