IXYS IXBT42N300HV

Name: IXBT42N300HV
Brand: IXYS
SKU: 2496708-IXBT42N300HV
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXBT42N300HV

Manufacturer:: IXYS

Ventron No:: 2496708-IXBT42N300HV

Description:: IGBT 3000V 42A 357W TO268

ECAD Model:

Datasheet:: IXBT42N300HV

Specifications

IXYS IXBT42N300HV technical specifications, attributes, parameters and parts with similar specifications to IXYS IXBT42N300HV.

Factory Lead Time
24 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-268-3, D3Pak (2 Leads Tab), TO-268AA
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
BIMOSFET™
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
500W
Reach Compliance Code
unknown
Input Type
Standard
Power - Max
500W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
3V
Max Collector Current
104A
Reverse Recovery Time
1.7 μs
Collector Emitter Breakdown Voltage
3kV
Voltage - Collector Emitter Breakdown (Max)
3000V
Test Condition
1500V, 42A, 20 Ω, 15V
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 42A
Gate Charge
200nC
Current - Collector Pulsed (Icm)
400A
Td (on/off) @ 25°C
72ns/445ns
Gate-Emitter Voltage-Max
25V
Gate-Emitter Thr Voltage-Max
5V
RoHS Status
ROHS3 Compliant

Description

IXBT42N300HV Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXBT42N300HV or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXBT42N300HV. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IXBT42N300HV More Descriptions

IGBT 3000V 42A 357W TO268

Product Comparison

The three parts on the right have similar specifications to IXBT42N300HV.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Subcategory

Max Power Dissipation

Reach Compliance Code

Input Type

Power - Max

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Test Condition

Vce(on) (Max) @ Vge, Ic

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

RoHS Status

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

Terminal Finish

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Element Configuration

Case Connection

Transistor Application

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Turn On Time

Turn Off Time-Nom (toff)

Switching Energy

View Compare
IXBT42N300HV

IXYS

24 Weeks

Surface Mount

Surface Mount

TO-268-3, D3Pak (2 Leads Tab), TO-268AA

-55°C~150°C TJ

Tube

BIMOSFET™

2014

Active

1 (Unlimited)

Insulated Gate BIP Transistors

500W

unknown

Standard

500W

N-CHANNEL

3V

104A

1.7 μs

3kV

3000V

1500V, 42A, 20 Ω, 15V

3V @ 15V, 42A

200nC

400A

72ns/445ns

25V

5V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IXBT42N170A

IXYS

26 Weeks

Surface Mount, Through Hole

Surface Mount

TO-268-3, D3Pak (2 Leads Tab), TO-268AA

-55°C~150°C TJ

Tube

BIMOSFET™

2010

Active

1 (Unlimited)

Insulated Gate BIP Transistors

357W

unknown

Standard

357W

N-CHANNEL

1.7kV

42A

330 ns

1.2kV

1700V

850V, 21A, 1 Ω, 15V

6V @ 15V, 21A

188nC

265A

19ns/200ns

20V

5.5V

ROHS3 Compliant

SILICON

e3

yes

2

PURE TIN

GULL WING

NOT SPECIFIED

NOT SPECIFIED

IXB*42N170

4

R-PSSO-G2

Not Qualified

1

Single

COLLECTOR

MOTOR CONTROL

5.2V

1.7kV

63 ns

420 ns

3.43mJ (on), 430μJ (off)

IXBT42N300HV vs IXBT42N170A
IXBT12N300HV

IXYS

24 Weeks

Surface Mount

Surface Mount

TO-268-3, D3Pak (2 Leads Tab), TO-268AA

-55°C~150°C TJ

Tube

BIMOSFET™

2013

Active

1 (Unlimited)

Insulated Gate BIP Transistors

160W

unknown

Standard

160W

N-CHANNEL

3.2V

30A

1.4 μs

3kV

3000V

1250V, 12A, 10 Ω, 15V

3.2V @ 15V, 12A

62nC

100A

64ns/180ns

20V

5V

ROHS3 Compliant

-

e3

-

-

Matte Tin (Sn)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IXBT42N300HV vs IXBT12N300HV
IXBT20N360HV

IXYS

8 Weeks

Surface Mount

Surface Mount

TO-268-3, D3Pak (2 Leads Tab), TO-268AA

-55°C~150°C TJ

Tube

BIMOSFET™

2014

Not For New Designs

1 (Unlimited)

-

430W

unknown

Standard

430W

-

3.4V

70A

1.7 μs

3.6kV

3600V

1500V, 20A, 10 Ω, 15V

3.4V @ 15V, 20A

110nC

220A

18ns/238ns

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

15.5mJ (on), 4.3mJ (off)

IXBT42N300HV vs IXBT20N360HV