IXYS IXBT16N170A

Name: IXBT16N170A
Brand: IXYS
SKU: 2854537-IXBT16N170A
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXBT16N170A

Manufacturer:: IXYS

Ventron No:: 2854537-IXBT16N170A

Description:: IGBT 1700V 16A 150W TO268

ECAD Model:

Datasheet:: IXBT16N170A

Specifications

IXYS IXBT16N170A technical specifications, attributes, parameters and parts with similar specifications to IXYS IXBT16N170A.

Factory Lead Time
26 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-268-3, D3Pak (2 Leads Tab), TO-268AA
Weight
4.500005g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Series
BIMOSFET™
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Matte Tin (Sn)
Additional Feature
LOW SWITCHING LOSSES
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
1.7kV
Max Power Dissipation
150W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
16A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
150W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
15 ns
Transistor Application
MOTOR CONTROL
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
220 ns
Collector Emitter Voltage (VCEO)
1.7kV
Max Collector Current
16A
Reverse Recovery Time
360 ns
Collector Emitter Breakdown Voltage
1.7kV
Voltage - Collector Emitter Breakdown (Max)
1700V
Turn On Time
43 ns
Test Condition
1360V, 10A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
6V @ 15V, 10A
Turn Off Time-Nom (toff)
370 ns
Gate Charge
65nC
Current - Collector Pulsed (Icm)
40A
Td (on/off) @ 25°C
15ns/160ns
Switching Energy
1.2mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.5V
Fall Time-Max (tf)
100ns
Height
5.1mm
Length
16.05mm
Width
14mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IXBT16N170A Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXBT16N170A or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXBT16N170A. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IXBT16N170A More Descriptions

Trans IGBT Chip N-CH 1700V 16A 190000mW 3-Pin(2 Tab) TO-268
IXBT Series 1700 Vce 16 A 15 ns t(on) Bipolar MOS Transistor - TO-268
IGBT 1700V 16A 150W TO268
OEMs, CMs ONLY (NO BROKERS)
Contact for details

Product Comparison

The three parts on the right have similar specifications to IXBT16N170A.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Input Type

Turn On Delay Time

Transistor Application

Polarity/Channel Type

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Fall Time-Max (tf)

Height

Length

Width

RoHS Status

Lead Free

Terminal Position

Configuration

Power - Max

View Compare
IXBT16N170A

IXYS

26 Weeks

Surface Mount

Surface Mount

TO-268-3, D3Pak (2 Leads Tab), TO-268AA

4.500005g

SILICON

-55°C~150°C TJ

Bulk

BIMOSFET™

2000

e3

yes

Active

1 (Unlimited)

2

Matte Tin (Sn)

LOW SWITCHING LOSSES

Insulated Gate BIP Transistors

1.7kV

150W

GULL WING

NOT SPECIFIED

not_compliant

16A

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

Single

150W

COLLECTOR

Standard

15 ns

MOTOR CONTROL

N-CHANNEL

220 ns

1.7kV

16A

360 ns

1.7kV

1700V

43 ns

1360V, 10A, 10 Ω, 15V

6V @ 15V, 10A

370 ns

65nC

40A

15ns/160ns

1.2mJ (off)

20V

5.5V

100ns

5.1mm

16.05mm

14mm

ROHS3 Compliant

Lead Free

-

-

-

-
IXBT32N300

IXYS

10 Weeks

Surface Mount

Surface Mount

TO-268-3, D3Pak (2 Leads Tab), TO-268AA

-

SILICON

-55°C~150°C TJ

Tube

BIMOSFET™

2009

e3

yes

Discontinued

1 (Unlimited)

2

Matte Tin (Sn)

LOW CONDUCTION LOSS

Insulated Gate BIP Transistors

-

400W

GULL WING

NOT SPECIFIED

not_compliant

-

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

-

-

COLLECTOR

Standard

-

POWER CONTROL

N-CHANNEL

-

3.2V

80A

1.5 μs

3kV

3000V

573 ns

-

3.2V @ 15V, 32A

795 ns

142nC

280A

-

-

20V

5V

-

-

-

-

ROHS3 Compliant

-

SINGLE

SINGLE WITH BUILT-IN DIODE

400W

IXBT16N170A vs IXBT32N300
IXBT42N300HV

IXYS

24 Weeks

Surface Mount

Surface Mount

TO-268-3, D3Pak (2 Leads Tab), TO-268AA

-

-

-55°C~150°C TJ

Tube

BIMOSFET™

2014

-

-

Active

1 (Unlimited)

-

-

-

Insulated Gate BIP Transistors

-

500W

-

-

unknown

-

-

-

-

-

-

-

-

-

Standard

-

-

N-CHANNEL

-

3V

104A

1.7 μs

3kV

3000V

-

1500V, 42A, 20 Ω, 15V

3V @ 15V, 42A

-

200nC

400A

72ns/445ns

-

25V

5V

-

-

-

-

ROHS3 Compliant

-

-

-

500W

IXBT16N170A vs IXBT42N300HV
IXBT12N300

IXYS

8 Weeks

Surface Mount

Surface Mount

TO-268-3, D3Pak (2 Leads Tab), TO-268AA

-

SILICON

-55°C~150°C TJ

Tube

BIMOSFET™

2012

e3

yes

Not For New Designs

1 (Unlimited)

2

Matte Tin (Sn)

LOW CONDUCTION LOSS

Insulated Gate BIP Transistors

-

160W

GULL WING

NOT SPECIFIED

not_compliant

-

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

-

-

COLLECTOR

Standard

-

POWER CONTROL

N-CHANNEL

-

3.2V

30A

1.4 μs

3kV

3000V

460 ns

-

3.2V @ 15V, 12A

705 ns

62nC

100A

-

-

20V

5V

-

-

-

-

ROHS3 Compliant

-

SINGLE

SINGLE WITH BUILT-IN DIODE

160W

IXBT16N170A vs IXBT12N300