IXYS IXBT20N360HV

Name: IXBT20N360HV
Brand: IXYS
SKU: 2494518-IXBT20N360HV
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXBT20N360HV

Manufacturer:: IXYS

Ventron No:: 2494518-IXBT20N360HV

Description:: IGBT 3600V 70A TO-268HV

ECAD Model:

Datasheet:: IXBT20N360HV

Specifications

IXYS IXBT20N360HV technical specifications, attributes, parameters and parts with similar specifications to IXYS IXBT20N360HV.

Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-268-3, D3Pak (2 Leads Tab), TO-268AA
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
BIMOSFET™
Published
2014
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
430W
Reach Compliance Code
unknown
Input Type
Standard
Power - Max
430W
Collector Emitter Voltage (VCEO)
3.4V
Max Collector Current
70A
Reverse Recovery Time
1.7 μs
Collector Emitter Breakdown Voltage
3.6kV
Voltage - Collector Emitter Breakdown (Max)
3600V
Test Condition
1500V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
3.4V @ 15V, 20A
Gate Charge
110nC
Current - Collector Pulsed (Icm)
220A
Td (on/off) @ 25°C
18ns/238ns
Switching Energy
15.5mJ (on), 4.3mJ (off)
RoHS Status
ROHS3 Compliant

Description

IXBT20N360HV Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXBT20N360HV or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXBT20N360HV. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IXBT20N360HV More Descriptions

IGBT 3600V 70A TO-268HV

Product Comparison

The three parts on the right have similar specifications to IXBT20N360HV.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Power Dissipation

Reach Compliance Code

Input Type

Power - Max

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Test Condition

Vce(on) (Max) @ Vge, Ic

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

RoHS Status

Weight

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Turn On Delay Time

Transistor Application

Polarity/Channel Type

Turn-Off Delay Time

Turn On Time

Turn Off Time-Nom (toff)

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Fall Time-Max (tf)

Height

Length

Width

Lead Free

Terminal Position

Configuration

View Compare
IXBT20N360HV

IXYS

8 Weeks

Surface Mount

Surface Mount

TO-268-3, D3Pak (2 Leads Tab), TO-268AA

-55°C~150°C TJ

Tube

BIMOSFET™

2014

Not For New Designs

1 (Unlimited)

430W

unknown

Standard

430W

3.4V

70A

1.7 μs

3.6kV

3600V

1500V, 20A, 10 Ω, 15V

3.4V @ 15V, 20A

110nC

220A

18ns/238ns

15.5mJ (on), 4.3mJ (off)

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IXBT16N170A

IXYS

26 Weeks

Surface Mount

Surface Mount

TO-268-3, D3Pak (2 Leads Tab), TO-268AA

-55°C~150°C TJ

Bulk

BIMOSFET™

2000

Active

1 (Unlimited)

150W

not_compliant

Standard

-

1.7kV

16A

360 ns

1.7kV

1700V

1360V, 10A, 10 Ω, 15V

6V @ 15V, 10A

65nC

40A

15ns/160ns

1.2mJ (off)

ROHS3 Compliant

4.500005g

SILICON

e3

yes

2

Matte Tin (Sn)

LOW SWITCHING LOSSES

Insulated Gate BIP Transistors

1.7kV

GULL WING

NOT SPECIFIED

16A

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

Single

150W

COLLECTOR

15 ns

MOTOR CONTROL

N-CHANNEL

220 ns

43 ns

370 ns

20V

5.5V

100ns

5.1mm

16.05mm

14mm

Lead Free

-

-

IXBT20N360HV vs IXBT16N170A
IXBT32N300

IXYS

10 Weeks

Surface Mount

Surface Mount

TO-268-3, D3Pak (2 Leads Tab), TO-268AA

-55°C~150°C TJ

Tube

BIMOSFET™

2009

Discontinued

1 (Unlimited)

400W

not_compliant

Standard

400W

3.2V

80A

1.5 μs

3kV

3000V

-

3.2V @ 15V, 32A

142nC

280A

-

-

ROHS3 Compliant

-

SILICON

e3

yes

2

Matte Tin (Sn)

LOW CONDUCTION LOSS

Insulated Gate BIP Transistors

-

GULL WING

NOT SPECIFIED

-

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

-

-

COLLECTOR

-

POWER CONTROL

N-CHANNEL

-

573 ns

795 ns

20V

5V

-

-

-

-

-

SINGLE

SINGLE WITH BUILT-IN DIODE

IXBT20N360HV vs IXBT32N300
IXBT12N300

IXYS

8 Weeks

Surface Mount

Surface Mount

TO-268-3, D3Pak (2 Leads Tab), TO-268AA

-55°C~150°C TJ

Tube

BIMOSFET™

2012

Not For New Designs

1 (Unlimited)

160W

not_compliant

Standard

160W

3.2V

30A

1.4 μs

3kV

3000V

-

3.2V @ 15V, 12A

62nC

100A

-

-

ROHS3 Compliant

-

SILICON

e3

yes

2

Matte Tin (Sn)

LOW CONDUCTION LOSS

Insulated Gate BIP Transistors

-

GULL WING

NOT SPECIFIED

-

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

-

-

COLLECTOR

-

POWER CONTROL

N-CHANNEL

-

460 ns

705 ns

20V

5V

-

-

-

-

-

SINGLE

SINGLE WITH BUILT-IN DIODE

IXBT20N360HV vs IXBT12N300