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IXBT42N170

IXYS IXBT42N170

Part Number:
IXBT42N170
Manufacturer:
IXYS
Ventron No:
2854855-IXBT42N170
Description:
IGBT 1700V 80A 360W TO268
ECAD Model:
Datasheet:
IXBT42N170

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Specifications
IXYS IXBT42N170 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXBT42N170.
  • Factory Lead Time
    24 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
  • Weight
    4.500005g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    BIMOSFET™
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    PURE TIN
  • Additional Feature
    LOW CONDUCTION LOSS
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    360W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IXB*42N170
  • Pin Count
    4
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Turn On Delay Time
    45 ns
  • Power - Max
    360W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    560 ns
  • Collector Emitter Voltage (VCEO)
    1.7kV
  • Max Collector Current
    80A
  • Reverse Recovery Time
    1.32 μs
  • Collector Emitter Breakdown Voltage
    1.7kV
  • Voltage - Collector Emitter Breakdown (Max)
    1700V
  • Collector Emitter Saturation Voltage
    2.3V
  • Turn On Time
    224 ns
  • Vce(on) (Max) @ Vge, Ic
    2.8V @ 15V, 42A
  • Turn Off Time-Nom (toff)
    1070 ns
  • Gate Charge
    188nC
  • Current - Collector Pulsed (Icm)
    300A
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5.5V
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IXBT42N170 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXBT42N170 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXBT42N170. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXBT42N170 More Descriptions
Trans IGBT Chip N-CH 1700V 80A 360000mW 3-Pin(2 Tab) TO-268
IXBT Series 1700 Vce 75 A 45 ns t(on) Bipolar MOS Transistor - TO-268
IGBT 1700V 80A 360W TO268
OEMs, CMs ONLY (NO BROKERS)
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXBT42N170.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Additional Feature
    Subcategory
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Turn On Delay Time
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Collector Emitter Saturation Voltage
    Turn On Time
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    RoHS Status
    Lead Free
    Max Breakdown Voltage
    Test Condition
    Td (on/off) @ 25°C
    Switching Energy
    Terminal Position
    Configuration
    View Compare
  • IXBT42N170
    IXBT42N170
    IXYS
    24 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    4.500005g
    SILICON
    -55°C~150°C TJ
    Tube
    BIMOSFET™
    2008
    e3
    yes
    Active
    1 (Unlimited)
    2
    PURE TIN
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    360W
    GULL WING
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    IXB*42N170
    4
    R-PSSO-G2
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    45 ns
    360W
    POWER CONTROL
    N-CHANNEL
    560 ns
    1.7kV
    80A
    1.32 μs
    1.7kV
    1700V
    2.3V
    224 ns
    2.8V @ 15V, 42A
    1070 ns
    188nC
    300A
    20V
    5.5V
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • IXBT42N170A
    IXBT42N170A
    IXYS
    26 Weeks
    Surface Mount, Through Hole
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    -
    SILICON
    -55°C~150°C TJ
    Tube
    BIMOSFET™
    2010
    e3
    yes
    Active
    1 (Unlimited)
    2
    PURE TIN
    -
    Insulated Gate BIP Transistors
    357W
    GULL WING
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    IXB*42N170
    4
    R-PSSO-G2
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    -
    357W
    MOTOR CONTROL
    N-CHANNEL
    -
    1.7kV
    42A
    330 ns
    1.2kV
    1700V
    5.2V
    63 ns
    6V @ 15V, 21A
    420 ns
    188nC
    265A
    20V
    5.5V
    ROHS3 Compliant
    -
    1.7kV
    850V, 21A, 1 Ω, 15V
    19ns/200ns
    3.43mJ (on), 430μJ (off)
    -
    -
    IXBT42N170 vs IXBT42N170A
  • IXBT42N300HV
    IXBT42N300HV
    IXYS
    24 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    -
    -
    -55°C~150°C TJ
    Tube
    BIMOSFET™
    2014
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    Insulated Gate BIP Transistors
    500W
    -
    -
    unknown
    -
    -
    -
    -
    -
    -
    -
    -
    Standard
    -
    500W
    -
    N-CHANNEL
    -
    3V
    104A
    1.7 μs
    3kV
    3000V
    -
    -
    3V @ 15V, 42A
    -
    200nC
    400A
    25V
    5V
    ROHS3 Compliant
    -
    -
    1500V, 42A, 20 Ω, 15V
    72ns/445ns
    -
    -
    -
    IXBT42N170 vs IXBT42N300HV
  • IXBT12N300
    IXBT12N300
    IXYS
    8 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    -
    SILICON
    -55°C~150°C TJ
    Tube
    BIMOSFET™
    2012
    e3
    yes
    Not For New Designs
    1 (Unlimited)
    2
    Matte Tin (Sn)
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    160W
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    -
    4
    R-PSSO-G2
    Not Qualified
    1
    -
    COLLECTOR
    Standard
    -
    160W
    POWER CONTROL
    N-CHANNEL
    -
    3.2V
    30A
    1.4 μs
    3kV
    3000V
    -
    460 ns
    3.2V @ 15V, 12A
    705 ns
    62nC
    100A
    20V
    5V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    SINGLE
    SINGLE WITH BUILT-IN DIODE
    IXBT42N170 vs IXBT12N300
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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