IXBT32N300

IXYS IXBT32N300

Part Number:
IXBT32N300
Manufacturer:
IXYS
Ventron No:
2496745-IXBT32N300
Description:
IGBT 3000V 80A 400W TO268
ECAD Model:
Datasheet:
IXBT32N300

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Specifications
IXYS IXBT32N300 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXBT32N300.
  • Factory Lead Time
    10 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    BIMOSFET™
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    LOW CONDUCTION LOSS
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    400W
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    4
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    400W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    3.2V
  • Max Collector Current
    80A
  • Reverse Recovery Time
    1.5 μs
  • Collector Emitter Breakdown Voltage
    3kV
  • Voltage - Collector Emitter Breakdown (Max)
    3000V
  • Turn On Time
    573 ns
  • Vce(on) (Max) @ Vge, Ic
    3.2V @ 15V, 32A
  • Turn Off Time-Nom (toff)
    795 ns
  • Gate Charge
    142nC
  • Current - Collector Pulsed (Icm)
    280A
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5V
  • RoHS Status
    ROHS3 Compliant
Description
IXBT32N300 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXBT32N300 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXBT32N300. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXBT32N300 More Descriptions
IGBT 3000V 80A 400W TO268
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXBT32N300.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Additional Feature
    Subcategory
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Turn On Time
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    RoHS Status
    Element Configuration
    Radiation Hardening
    Lead Free
    Weight
    Power Dissipation
    Collector Emitter Saturation Voltage
    View Compare
  • IXBT32N300
    IXBT32N300
    10 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    SILICON
    -55°C~150°C TJ
    Tube
    BIMOSFET™
    2009
    e3
    yes
    Discontinued
    1 (Unlimited)
    2
    Matte Tin (Sn)
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    400W
    SINGLE
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    4
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    Standard
    400W
    POWER CONTROL
    N-CHANNEL
    3.2V
    80A
    1.5 μs
    3kV
    3000V
    573 ns
    3.2V @ 15V, 32A
    795 ns
    142nC
    280A
    20V
    5V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
  • IXBT2N250
    24 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    SILICON
    -55°C~150°C TJ
    Tube
    BIMOSFET™
    2009
    e3
    yes
    Active
    1 (Unlimited)
    2
    Matte Tin (Sn)
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    32W
    -
    GULL WING
    -
    -
    -
    4
    R-PSSO-G2
    -
    1
    -
    COLLECTOR
    Standard
    32W
    POWER CONTROL
    N-CHANNEL
    2.5kV
    5A
    920 ns
    2.5kV
    2500V
    310 ns
    3.5V @ 15V, 2A
    252 ns
    10.6nC
    13A
    20V
    5.5V
    ROHS3 Compliant
    Single
    No
    Lead Free
    -
    -
    -
  • IXBT6N170
    24 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    SILICON
    -55°C~150°C TJ
    Tube
    BIMOSFET™
    2008
    e3
    yes
    Active
    1 (Unlimited)
    2
    Matte Tin (Sn)
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    75W
    -
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    4
    R-PSSO-G2
    Not Qualified
    1
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    1.7kV
    12A
    1.08 μs
    1.7kV
    1700V
    104 ns
    3.4V @ 15V, 6A
    700 ns
    17nC
    36A
    20V
    5.5V
    ROHS3 Compliant
    Single
    -
    -
    4.500005g
    75W
    2.84V
  • IXBT12N300
    8 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    SILICON
    -55°C~150°C TJ
    Tube
    BIMOSFET™
    2012
    e3
    yes
    Not For New Designs
    1 (Unlimited)
    2
    Matte Tin (Sn)
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    160W
    SINGLE
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    4
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    Standard
    160W
    POWER CONTROL
    N-CHANNEL
    3.2V
    30A
    1.4 μs
    3kV
    3000V
    460 ns
    3.2V @ 15V, 12A
    705 ns
    62nC
    100A
    20V
    5V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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