IXYS IXBT32N300
- Part Number:
- IXBT32N300
- Manufacturer:
- IXYS
- Ventron No:
- 2496745-IXBT32N300
- Description:
- IGBT 3000V 80A 400W TO268
- Datasheet:
- IXBT32N300
IXYS IXBT32N300 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXBT32N300.
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-268-3, D3Pak (2 Leads Tab), TO-268AA
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesBIMOSFET™
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishMatte Tin (Sn)
- Additional FeatureLOW CONDUCTION LOSS
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation400W
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count4
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Power - Max400W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)3.2V
- Max Collector Current80A
- Reverse Recovery Time1.5 μs
- Collector Emitter Breakdown Voltage3kV
- Voltage - Collector Emitter Breakdown (Max)3000V
- Turn On Time573 ns
- Vce(on) (Max) @ Vge, Ic3.2V @ 15V, 32A
- Turn Off Time-Nom (toff)795 ns
- Gate Charge142nC
- Current - Collector Pulsed (Icm)280A
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5V
- RoHS StatusROHS3 Compliant
IXBT32N300 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXBT32N300 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXBT32N300. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXBT32N300 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXBT32N300. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXBT32N300 More Descriptions
IGBT 3000V 80A 400W TO268
Contact for details
Contact for details
The three parts on the right have similar specifications to IXBT32N300.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureSubcategoryMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Turn On TimeVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Gate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxRoHS StatusElement ConfigurationRadiation HardeningLead FreeWeightPower DissipationCollector Emitter Saturation VoltageView Compare
-
IXBT32N30010 WeeksSurface MountSurface MountTO-268-3, D3Pak (2 Leads Tab), TO-268AASILICON-55°C~150°C TJTubeBIMOSFET™2009e3yesDiscontinued1 (Unlimited)2Matte Tin (Sn)LOW CONDUCTION LOSSInsulated Gate BIP Transistors400WSINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIED4R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODECOLLECTORStandard400WPOWER CONTROLN-CHANNEL3.2V80A1.5 μs3kV3000V573 ns3.2V @ 15V, 32A795 ns142nC280A20V5VROHS3 Compliant-------
-
24 WeeksSurface MountSurface MountTO-268-3, D3Pak (2 Leads Tab), TO-268AASILICON-55°C~150°C TJTubeBIMOSFET™2009e3yesActive1 (Unlimited)2Matte Tin (Sn)LOW CONDUCTION LOSSInsulated Gate BIP Transistors32W-GULL WING---4R-PSSO-G2-1-COLLECTORStandard32WPOWER CONTROLN-CHANNEL2.5kV5A920 ns2.5kV2500V310 ns3.5V @ 15V, 2A252 ns10.6nC13A20V5.5VROHS3 CompliantSingleNoLead Free---
-
24 WeeksSurface MountSurface MountTO-268-3, D3Pak (2 Leads Tab), TO-268AASILICON-55°C~150°C TJTubeBIMOSFET™2008e3yesActive1 (Unlimited)2Matte Tin (Sn)LOW CONDUCTION LOSSInsulated Gate BIP Transistors75W-GULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIED4R-PSSO-G2Not Qualified1-COLLECTORStandard-POWER CONTROLN-CHANNEL1.7kV12A1.08 μs1.7kV1700V104 ns3.4V @ 15V, 6A700 ns17nC36A20V5.5VROHS3 CompliantSingle--4.500005g75W2.84V
-
8 WeeksSurface MountSurface MountTO-268-3, D3Pak (2 Leads Tab), TO-268AASILICON-55°C~150°C TJTubeBIMOSFET™2012e3yesNot For New Designs1 (Unlimited)2Matte Tin (Sn)LOW CONDUCTION LOSSInsulated Gate BIP Transistors160WSINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIED4R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODECOLLECTORStandard160WPOWER CONTROLN-CHANNEL3.2V30A1.4 μs3kV3000V460 ns3.2V @ 15V, 12A705 ns62nC100A20V5VROHS3 Compliant------
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
21 December 2023
Exploring the PC817 Optocoupler: Working Principle, Package, Manufacturer and More
Ⅰ. What is PC817 optocoupler?Ⅱ. How PC817 optocoupler works?Ⅲ. Where can we use PC817 optocoupler?Ⅳ. PC817 optocoupler packageⅤ. How to measure the quality of PC817?Ⅵ. Manufacturer of PC817... -
22 December 2023
STM32F429IGT6 Microcontroller: Feature-Rich Embedded System Design
Ⅰ. What is STM32F429IGT6?Ⅱ. Application fields of STM32F429IGT6Ⅲ. Naming rules of STM32F429IGT6Ⅳ. Precautions for using STM32F429IGT6Ⅴ. STM32F429IGT6 characteristicsⅥ. Power supply diagram of STM32F429IGT6Ⅶ. Specifications of STM32F429IGT6Ⅷ. How to... -
22 December 2023
SS8050 NPN Epitaxial Silicon Transistor: Ideal for Small Power Amplification and Switching Applications
Ⅰ. Introduction of SS8050Ⅱ. Technical parameters of SS8050 transistorⅢ. NPN-type transistor and PNP-type transistorⅣ. How to use SS8050 transistor?Ⅴ. Electrical characteristics of SS8050 transistorⅥ. What is the difference... -
25 December 2023
N76E003AT20 Microcontroller: The Intelligent Engine of Embedded Systems
Ⅰ. What is N76E003AT20?Ⅱ. Characteristics of N76E003AT20 microcontrollerⅢ. N76E003AT20 dimension and packageⅣ. Operating modesⅤ. Who produces N76E003AT20 microcontroller?Ⅵ. N76E003AT20 microcontroller specificationsⅦ. What are the uses of N76E003AT20 microcontroller?Ⅷ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.