IXYS IXBT2N250

Name: IXBT2N250
Brand: IXYS
SKU: 2496743-IXBT2N250
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXBT2N250

Manufacturer:: IXYS

Ventron No:: 2496743-IXBT2N250

Description:: IGBT 2500V 5A 32W TO268

ECAD Model:

Datasheet:: IXBT2N250

Specifications

IXYS IXBT2N250 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXBT2N250.

Factory Lead Time
24 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-268-3, D3Pak (2 Leads Tab), TO-268AA
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
BIMOSFET™
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Matte Tin (Sn)
Additional Feature
LOW CONDUCTION LOSS
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
32W
Terminal Form
GULL WING
Pin Count
4
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
32W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.5kV
Max Collector Current
5A
Reverse Recovery Time
920 ns
Collector Emitter Breakdown Voltage
2.5kV
Voltage - Collector Emitter Breakdown (Max)
2500V
Turn On Time
310 ns
Vce(on) (Max) @ Vge, Ic
3.5V @ 15V, 2A
Turn Off Time-Nom (toff)
252 ns
Gate Charge
10.6nC
Current - Collector Pulsed (Icm)
13A
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IXBT2N250 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXBT2N250 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXBT2N250. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IXBT2N250 More Descriptions

Trans IGBT Chip N-CH 2500V 5A 32000mW 3-Pin(2 Tab) TO-268
IXBT Series 2500 V 5 A 32 W SMT Monolithic Bipolar MOS Transistor - TO-268
IGBT 2500V 5A 32W TO268
OEMs, CMs ONLY (NO BROKERS)

Product Comparison

The three parts on the right have similar specifications to IXBT2N250.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Additional Feature

Subcategory

Max Power Dissipation

Terminal Form

Pin Count

JESD-30 Code

Number of Elements

Element Configuration

Case Connection

Input Type

Power - Max

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Turn On Time

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Radiation Hardening

RoHS Status

Lead Free

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Configuration

Test Condition

Td (on/off) @ 25°C

Switching Energy

View Compare
IXBT2N250

IXYS

24 Weeks

Surface Mount

Surface Mount

TO-268-3, D3Pak (2 Leads Tab), TO-268AA

SILICON

-55°C~150°C TJ

Tube

BIMOSFET™

2009

e3

yes

Active

1 (Unlimited)

2

Matte Tin (Sn)

LOW CONDUCTION LOSS

Insulated Gate BIP Transistors

32W

GULL WING

4

R-PSSO-G2

1

Single

COLLECTOR

Standard

32W

POWER CONTROL

N-CHANNEL

2.5kV

5A

920 ns

2.5kV

2500V

310 ns

3.5V @ 15V, 2A

252 ns

10.6nC

13A

20V

5.5V

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
IXBT32N300

IXYS

10 Weeks

Surface Mount

Surface Mount

TO-268-3, D3Pak (2 Leads Tab), TO-268AA

SILICON

-55°C~150°C TJ

Tube

BIMOSFET™

2009

e3

yes

Discontinued

1 (Unlimited)

2

Matte Tin (Sn)

LOW CONDUCTION LOSS

Insulated Gate BIP Transistors

400W

GULL WING

4

R-PSSO-G2

1

-

COLLECTOR

Standard

400W

POWER CONTROL

N-CHANNEL

3.2V

80A

1.5 μs

3kV

3000V

573 ns

3.2V @ 15V, 32A

795 ns

142nC

280A

20V

5V

-

ROHS3 Compliant

-

SINGLE

NOT SPECIFIED

not_compliant

NOT SPECIFIED

Not Qualified

SINGLE WITH BUILT-IN DIODE

-

-

-

IXBT2N250 vs IXBT32N300
IXBT12N300

IXYS

8 Weeks

Surface Mount

Surface Mount

TO-268-3, D3Pak (2 Leads Tab), TO-268AA

SILICON

-55°C~150°C TJ

Tube

BIMOSFET™

2012

e3

yes

Not For New Designs

1 (Unlimited)

2

Matte Tin (Sn)

LOW CONDUCTION LOSS

Insulated Gate BIP Transistors

160W

GULL WING

4

R-PSSO-G2

1

-

COLLECTOR

Standard

160W

POWER CONTROL

N-CHANNEL

3.2V

30A

1.4 μs

3kV

3000V

460 ns

3.2V @ 15V, 12A

705 ns

62nC

100A

20V

5V

-

ROHS3 Compliant

-

SINGLE

NOT SPECIFIED

not_compliant

NOT SPECIFIED

Not Qualified

SINGLE WITH BUILT-IN DIODE

-

-

-

IXBT2N250 vs IXBT12N300
IXBT20N360HV

IXYS

8 Weeks

Surface Mount

Surface Mount

TO-268-3, D3Pak (2 Leads Tab), TO-268AA

-

-55°C~150°C TJ

Tube

BIMOSFET™

2014

-

-

Not For New Designs

1 (Unlimited)

-

-

-

-

430W

-

-

-

-

-

-

Standard

430W

-

-

3.4V

70A

1.7 μs

3.6kV

3600V

-

3.4V @ 15V, 20A

-

110nC

220A

-

-

-

ROHS3 Compliant

-

-

-

unknown

-

-

-

1500V, 20A, 10 Ω, 15V

18ns/238ns

15.5mJ (on), 4.3mJ (off)

IXBT2N250 vs IXBT20N360HV