IXYS IXBT12N300HV

Name: IXBT12N300HV
Brand: IXYS
SKU: 2496720-IXBT12N300HV
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXBT12N300HV

Manufacturer:: IXYS

Ventron No:: 2496720-IXBT12N300HV

Description:: IGBT 3000V 30A 160W TO268

ECAD Model:

Datasheet:: IXBT12N300HV

Specifications

IXYS IXBT12N300HV technical specifications, attributes, parameters and parts with similar specifications to IXYS IXBT12N300HV.

Factory Lead Time
24 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-268-3, D3Pak (2 Leads Tab), TO-268AA
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
BIMOSFET™
Published
2013
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Matte Tin (Sn)
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
160W
Reach Compliance Code
unknown
Input Type
Standard
Power - Max
160W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
3.2V
Max Collector Current
30A
Reverse Recovery Time
1.4 μs
Collector Emitter Breakdown Voltage
3kV
Voltage - Collector Emitter Breakdown (Max)
3000V
Test Condition
1250V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
3.2V @ 15V, 12A
Gate Charge
62nC
Current - Collector Pulsed (Icm)
100A
Td (on/off) @ 25°C
64ns/180ns
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5V
RoHS Status
ROHS3 Compliant

Description

IXBT12N300HV Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXBT12N300HV or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXBT12N300HV. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IXBT12N300HV More Descriptions

Very High Voltage Series - 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs, TO-268HV, RoHSLittelfuse SCT
Disc Igbt Bimsft-Veryhivolt To-268Aa/Tube |Littelfuse IXBT12N300HV
DISC IGBT 3000V TO268AA
IGBT BIMSFT-VERYHIVOLT

Product Comparison

The three parts on the right have similar specifications to IXBT12N300HV.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Terminal Finish

Subcategory

Max Power Dissipation

Reach Compliance Code

Input Type

Power - Max

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Test Condition

Vce(on) (Max) @ Vge, Ic

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

RoHS Status

Transistor Element Material

Pbfree Code

Number of Terminations

Additional Feature

Terminal Form

Pin Count

JESD-30 Code

Number of Elements

Element Configuration

Case Connection

Transistor Application

Turn On Time

Turn Off Time-Nom (toff)

Radiation Hardening

Lead Free

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Configuration

View Compare
IXBT12N300HV

IXYS

24 Weeks

Surface Mount

Surface Mount

TO-268-3, D3Pak (2 Leads Tab), TO-268AA

-55°C~150°C TJ

Tube

BIMOSFET™

2013

e3

Active

1 (Unlimited)

Matte Tin (Sn)

Insulated Gate BIP Transistors

160W

unknown

Standard

160W

N-CHANNEL

3.2V

30A

1.4 μs

3kV

3000V

1250V, 12A, 10 Ω, 15V

3.2V @ 15V, 12A

62nC

100A

64ns/180ns

20V

5V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IXBT2N250

IXYS

24 Weeks

Surface Mount

Surface Mount

TO-268-3, D3Pak (2 Leads Tab), TO-268AA

-55°C~150°C TJ

Tube

BIMOSFET™

2009

e3

Active

1 (Unlimited)

Matte Tin (Sn)

Insulated Gate BIP Transistors

32W

-

Standard

32W

N-CHANNEL

2.5kV

5A

920 ns

2.5kV

2500V

-

3.5V @ 15V, 2A

10.6nC

13A

-

20V

5.5V

ROHS3 Compliant

SILICON

yes

2

LOW CONDUCTION LOSS

GULL WING

4

R-PSSO-G2

1

Single

COLLECTOR

POWER CONTROL

310 ns

252 ns

No

Lead Free

-

-

-

-

-

IXBT12N300HV vs IXBT2N250
IXBT42N300HV

IXYS

24 Weeks

Surface Mount

Surface Mount

TO-268-3, D3Pak (2 Leads Tab), TO-268AA

-55°C~150°C TJ

Tube

BIMOSFET™

2014

-

Active

1 (Unlimited)

-

Insulated Gate BIP Transistors

500W

unknown

Standard

500W

N-CHANNEL

3V

104A

1.7 μs

3kV

3000V

1500V, 42A, 20 Ω, 15V

3V @ 15V, 42A

200nC

400A

72ns/445ns

25V

5V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IXBT12N300HV vs IXBT42N300HV
IXBT12N300

IXYS

8 Weeks

Surface Mount

Surface Mount

TO-268-3, D3Pak (2 Leads Tab), TO-268AA

-55°C~150°C TJ

Tube

BIMOSFET™

2012

e3

Not For New Designs

1 (Unlimited)

Matte Tin (Sn)

Insulated Gate BIP Transistors

160W

not_compliant

Standard

160W

N-CHANNEL

3.2V

30A

1.4 μs

3kV

3000V

-

3.2V @ 15V, 12A

62nC

100A

-

20V

5V

ROHS3 Compliant

SILICON

yes

2

LOW CONDUCTION LOSS

GULL WING

4

R-PSSO-G2

1

-

COLLECTOR

POWER CONTROL

460 ns

705 ns

-

-

SINGLE

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

SINGLE WITH BUILT-IN DIODE

IXBT12N300HV vs IXBT12N300