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IXBT42N170A

IXYS IXBT42N170A

Part Number:
IXBT42N170A
Manufacturer:
IXYS
Ventron No:
2496725-IXBT42N170A
Description:
IGBT 1700V 42A 357W TO268
ECAD Model:
Datasheet:
IXBT42N170A

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Specifications
IXYS IXBT42N170A technical specifications, attributes, parameters and parts with similar specifications to IXYS IXBT42N170A.
  • Factory Lead Time
    26 Weeks
  • Mount
    Surface Mount, Through Hole
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    BIMOSFET™
  • Published
    2010
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    PURE TIN
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    357W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IXB*42N170
  • Pin Count
    4
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    357W
  • Transistor Application
    MOTOR CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.7kV
  • Max Collector Current
    42A
  • Reverse Recovery Time
    330 ns
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1700V
  • Collector Emitter Saturation Voltage
    5.2V
  • Max Breakdown Voltage
    1.7kV
  • Turn On Time
    63 ns
  • Test Condition
    850V, 21A, 1 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    6V @ 15V, 21A
  • Turn Off Time-Nom (toff)
    420 ns
  • Gate Charge
    188nC
  • Current - Collector Pulsed (Icm)
    265A
  • Td (on/off) @ 25°C
    19ns/200ns
  • Switching Energy
    3.43mJ (on), 430μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5.5V
  • RoHS Status
    ROHS3 Compliant
Description
Description: The IXYS Transistors - IGBTs - Single IXBT42N170A is a single N-channel insulated gate bipolar transistor (IGBT) chip with a maximum voltage rating of 1.7kV and a maximum current rating of 42A. It is designed for use in high-power applications and features a 3-pin (2 Tab) TO-268AB package.

Features:
- Maximum voltage rating of 1.7kV
- Maximum current rating of 42A
- 3-pin (2 Tab) TO-268AB package
- Low on-state voltage drop
- High switching speed
- Low gate drive power
- High surge current capability

Applications: The IXYS Transistors - IGBTs - Single IXBT42N170A is suitable for use in a variety of high-power applications, such as motor control, power conversion, and power switching. It can also be used in high-voltage, high-current applications, such as welding, UPS systems, and solar inverters.
IXBT42N170A More Descriptions
Insulated Gate Bipolar Transistor, 42A I(C), 1700V V(BR)CES, N-Channel, TO-268AA
Trans IGBT Chip N-CH 1.7KV 42A 3-Pin(2 Tab) TO-268
IGBT 1700V 42A 357W TO268
OEMs, CMs ONLY (NO BROKERS)
new, original packaged
Product Comparison
The three parts on the right have similar specifications to IXBT42N170A.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    RoHS Status
    Weight
    Additional Feature
    Voltage - Rated DC
    Current Rating
    Power Dissipation
    Turn On Delay Time
    Turn-Off Delay Time
    Fall Time-Max (tf)
    Height
    Length
    Width
    Lead Free
    Terminal Position
    Configuration
    View Compare
  • IXBT42N170A
    IXBT42N170A
    IXYS
    26 Weeks
    Surface Mount, Through Hole
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    SILICON
    -55°C~150°C TJ
    Tube
    BIMOSFET™
    2010
    e3
    yes
    Active
    1 (Unlimited)
    2
    PURE TIN
    Insulated Gate BIP Transistors
    357W
    GULL WING
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    IXB*42N170
    4
    R-PSSO-G2
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    357W
    MOTOR CONTROL
    N-CHANNEL
    1.7kV
    42A
    330 ns
    1.2kV
    1700V
    5.2V
    1.7kV
    63 ns
    850V, 21A, 1 Ω, 15V
    6V @ 15V, 21A
    420 ns
    188nC
    265A
    19ns/200ns
    3.43mJ (on), 430μJ (off)
    20V
    5.5V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXBT16N170A
    IXBT16N170A
    IXYS
    26 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    SILICON
    -55°C~150°C TJ
    Bulk
    BIMOSFET™
    2000
    e3
    yes
    Active
    1 (Unlimited)
    2
    Matte Tin (Sn)
    Insulated Gate BIP Transistors
    150W
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    -
    4
    R-PSSO-G2
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    -
    MOTOR CONTROL
    N-CHANNEL
    1.7kV
    16A
    360 ns
    1.7kV
    1700V
    -
    -
    43 ns
    1360V, 10A, 10 Ω, 15V
    6V @ 15V, 10A
    370 ns
    65nC
    40A
    15ns/160ns
    1.2mJ (off)
    20V
    5.5V
    ROHS3 Compliant
    4.500005g
    LOW SWITCHING LOSSES
    1.7kV
    16A
    150W
    15 ns
    220 ns
    100ns
    5.1mm
    16.05mm
    14mm
    Lead Free
    -
    -
    IXBT42N170A vs IXBT16N170A
  • IXBT32N300
    IXBT32N300
    IXYS
    10 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    SILICON
    -55°C~150°C TJ
    Tube
    BIMOSFET™
    2009
    e3
    yes
    Discontinued
    1 (Unlimited)
    2
    Matte Tin (Sn)
    Insulated Gate BIP Transistors
    400W
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    -
    4
    R-PSSO-G2
    Not Qualified
    1
    -
    COLLECTOR
    Standard
    400W
    POWER CONTROL
    N-CHANNEL
    3.2V
    80A
    1.5 μs
    3kV
    3000V
    -
    -
    573 ns
    -
    3.2V @ 15V, 32A
    795 ns
    142nC
    280A
    -
    -
    20V
    5V
    ROHS3 Compliant
    -
    LOW CONDUCTION LOSS
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    SINGLE
    SINGLE WITH BUILT-IN DIODE
    IXBT42N170A vs IXBT32N300
  • IXBT6N170
    IXBT6N170
    IXYS
    24 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    SILICON
    -55°C~150°C TJ
    Tube
    BIMOSFET™
    2008
    e3
    yes
    Active
    1 (Unlimited)
    2
    Matte Tin (Sn)
    Insulated Gate BIP Transistors
    75W
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    -
    4
    R-PSSO-G2
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    1.7kV
    12A
    1.08 μs
    1.7kV
    1700V
    2.84V
    -
    104 ns
    -
    3.4V @ 15V, 6A
    700 ns
    17nC
    36A
    -
    -
    20V
    5.5V
    ROHS3 Compliant
    4.500005g
    LOW CONDUCTION LOSS
    -
    -
    75W
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IXBT42N170A vs IXBT6N170
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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