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IXBT6N170

IXYS IXBT6N170

Part Number:
IXBT6N170
Manufacturer:
IXYS
Ventron No:
2496626-IXBT6N170
Description:
IGBT 1700V 12A 75W TO268
ECAD Model:
Datasheet:
IXBT6N170

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Specifications
IXYS IXBT6N170 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXBT6N170.
  • Factory Lead Time
    24 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
  • Weight
    4.500005g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    BIMOSFET™
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    LOW CONDUCTION LOSS
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    75W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    4
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    75W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.7kV
  • Max Collector Current
    12A
  • Reverse Recovery Time
    1.08 μs
  • Collector Emitter Breakdown Voltage
    1.7kV
  • Voltage - Collector Emitter Breakdown (Max)
    1700V
  • Collector Emitter Saturation Voltage
    2.84V
  • Turn On Time
    104 ns
  • Vce(on) (Max) @ Vge, Ic
    3.4V @ 15V, 6A
  • Turn Off Time-Nom (toff)
    700 ns
  • Gate Charge
    17nC
  • Current - Collector Pulsed (Icm)
    36A
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5.5V
  • RoHS Status
    ROHS3 Compliant
Description
IXBT6N170 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXBT6N170 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXBT6N170. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXBT6N170 More Descriptions
Trans IGBT Chip N-CH 1700V 12A 75000mW 3-Pin(2 Tab) TO-268
IGBT 1700V 12A 75W TO268
IGBT Transistors 12 Amps 1700V 3.6 Rds
OEMs, CMs ONLY (NO BROKERS)
new, original packaged
Contact for details
TO-268 IGBTs ROHS
Product Comparison
The three parts on the right have similar specifications to IXBT6N170.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Additional Feature
    Subcategory
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Collector Emitter Saturation Voltage
    Turn On Time
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    RoHS Status
    Power - Max
    Test Condition
    Td (on/off) @ 25°C
    Switching Energy
    View Compare
  • IXBT6N170
    IXBT6N170
    IXYS
    24 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    4.500005g
    SILICON
    -55°C~150°C TJ
    Tube
    BIMOSFET™
    2008
    e3
    yes
    Active
    1 (Unlimited)
    2
    Matte Tin (Sn)
    LOW CONDUCTION LOSS
    Insulated Gate BIP Transistors
    75W
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    4
    R-PSSO-G2
    Not Qualified
    1
    Single
    75W
    COLLECTOR
    Standard
    POWER CONTROL
    N-CHANNEL
    1.7kV
    12A
    1.08 μs
    1.7kV
    1700V
    2.84V
    104 ns
    3.4V @ 15V, 6A
    700 ns
    17nC
    36A
    20V
    5.5V
    ROHS3 Compliant
    -
    -
    -
    -
    -
  • IXBT12N300HV
    IXBT12N300HV
    IXYS
    24 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    -
    -
    -55°C~150°C TJ
    Tube
    BIMOSFET™
    2013
    e3
    -
    Active
    1 (Unlimited)
    -
    Matte Tin (Sn)
    -
    Insulated Gate BIP Transistors
    160W
    -
    -
    unknown
    -
    -
    -
    -
    -
    -
    -
    -
    Standard
    -
    N-CHANNEL
    3.2V
    30A
    1.4 μs
    3kV
    3000V
    -
    -
    3.2V @ 15V, 12A
    -
    62nC
    100A
    20V
    5V
    ROHS3 Compliant
    160W
    1250V, 12A, 10 Ω, 15V
    64ns/180ns
    -
    IXBT6N170 vs IXBT12N300HV
  • IXBT42N300HV
    IXBT42N300HV
    IXYS
    24 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    -
    -
    -55°C~150°C TJ
    Tube
    BIMOSFET™
    2014
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    Insulated Gate BIP Transistors
    500W
    -
    -
    unknown
    -
    -
    -
    -
    -
    -
    -
    -
    Standard
    -
    N-CHANNEL
    3V
    104A
    1.7 μs
    3kV
    3000V
    -
    -
    3V @ 15V, 42A
    -
    200nC
    400A
    25V
    5V
    ROHS3 Compliant
    500W
    1500V, 42A, 20 Ω, 15V
    72ns/445ns
    -
    IXBT6N170 vs IXBT42N300HV
  • IXBT20N360HV
    IXBT20N360HV
    IXYS
    8 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    -
    -
    -55°C~150°C TJ
    Tube
    BIMOSFET™
    2014
    -
    -
    Not For New Designs
    1 (Unlimited)
    -
    -
    -
    -
    430W
    -
    -
    unknown
    -
    -
    -
    -
    -
    -
    -
    -
    Standard
    -
    -
    3.4V
    70A
    1.7 μs
    3.6kV
    3600V
    -
    -
    3.4V @ 15V, 20A
    -
    110nC
    220A
    -
    -
    ROHS3 Compliant
    430W
    1500V, 20A, 10 Ω, 15V
    18ns/238ns
    15.5mJ (on), 4.3mJ (off)
    IXBT6N170 vs IXBT20N360HV
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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