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IRLR7833

Infineon Technologies IRLR7833

Part Number:
IRLR7833
Manufacturer:
Infineon Technologies
Ventron No:
2482867-IRLR7833
Description:
MOSFET N-CH 30V 140A DPAK
ECAD Model:
Datasheet:
IRLR7833

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Part Pictures
  • IRLR7833 Detail Images
Specifications
Infineon Technologies IRLR7833 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR7833.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2004
  • JESD-609 Code
    e0
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    245
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    140W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.5m Ω @ 15A, 10V
  • Vgs(th) (Max) @ Id
    2.3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4010pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    140A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    50nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • JEDEC-95 Code
    TO-252AA
  • Drain Current-Max (Abs) (ID)
    30A
  • Drain-source On Resistance-Max
    0.0045Ohm
  • Pulsed Drain Current-Max (IDM)
    560A
  • DS Breakdown Voltage-Min
    30V
  • Avalanche Energy Rating (Eas)
    530 mJ
  • RoHS Status
    Non-RoHS Compliant
Description
IRLR7833 Description On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics. Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products. The manufacturer of IRLR7833 is onsemi.
IRLR7833 Applications High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
IRLR7833 Benefits Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current
IRLR7833 More Descriptions
MOSFET, 30V, 140A, 4.5 mOhm, 38 nC Qg, Logic Level, D-Pak
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Trans MOSFET N-CH 30V 140A 3-Pin(2 Tab) DPAK
French Electronic Distributor since 1988
IRLR7833 Detail Images
Product Comparison
The three parts on the right have similar specifications to IRLR7833.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Subcategory
    Mount
    Supplier Device Package
    Continuous Drain Current (ID)
    Input Capacitance
    Rds On Max
    Factory Lead Time
    Number of Pins
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Current Rating
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Drain to Source Resistance
    Radiation Hardening
    Lead Free
    View Compare
  • IRLR7833
    IRLR7833
    Infineon Technologies
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    e0
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Tin/Lead (Sn/Pb)
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    245
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    140W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    4.5m Ω @ 15A, 10V
    2.3V @ 250μA
    4010pF @ 15V
    140A Tc
    50nC @ 4.5V
    30V
    4.5V 10V
    ±20V
    TO-252AA
    30A
    0.0045Ohm
    560A
    30V
    530 mJ
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLR014NTRR
    IRLR014NTRR
    Infineon Technologies
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2001
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    Single
    28W Tc
    ENHANCEMENT MODE
    -
    N-Channel
    -
    140m Ω @ 6A, 10V
    1V @ 250μA
    265pF @ 25V
    10A Tc
    7.9nC @ 5V
    55V
    4.5V 10V
    ±16V
    -
    10A
    -
    -
    -
    -
    Non-RoHS Compliant
    FET General Purpose Power
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRLR7833 vs IRLR014NTRR
  • IRLR024TRR
    IRLR024TRR
    Vishay Siliconix
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    1997
    -
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    2.5W Ta 42W Tc
    -
    -
    N-Channel
    -
    100mOhm @ 8.4A, 5V
    2V @ 250μA
    870pF @ 25V
    14A Tc
    18nC @ 5V
    60V
    4V 5V
    ±10V
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    Surface Mount
    D-Pak
    14A
    870pF
    100 mΩ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRLR7833 vs IRLR024TRR
  • IRLR024TR
    IRLR024TR
    Vishay Siliconix
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2016
    -
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    2.5W Ta 42W Tc
    -
    -
    N-Channel
    -
    100mOhm @ 8.4A, 5V
    2V @ 250μA
    870pF @ 25V
    14A Tc
    18nC @ 5V
    60V
    4V 5V
    ±10V
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    Surface Mount
    D-Pak
    14A
    870pF
    100 mΩ
    21 Weeks
    2
    150°C
    -55°C
    60V
    14A
    Single
    2.5W
    11 ns
    110ns
    41 ns
    23 ns
    10V
    60V
    100mOhm
    No
    Contains Lead
    IRLR7833 vs IRLR024TR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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