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IRLR3717PBF

Infineon Technologies IRLR3717PBF

Part Number:
IRLR3717PBF
Manufacturer:
Infineon Technologies
Ventron No:
2488988-IRLR3717PBF
Description:
MOSFET N-CH 20V 120A DPAK
ECAD Model:
Datasheet:
IRLR3717PbF, IRLU3717PbF

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Specifications
Infineon Technologies IRLR3717PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR3717PBF.
  • Factory Lead Time
    15 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2004
  • JESD-609 Code
    e3
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    4MOhm
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    20V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    120A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    89W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    89W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    14 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4m Ω @ 15A, 10V
  • Vgs(th) (Max) @ Id
    2.45V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2830pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    120A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    31nC @ 4.5V
  • Rise Time
    14ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    16 ns
  • Turn-Off Delay Time
    5.8 ns
  • Continuous Drain Current (ID)
    120A
  • Threshold Voltage
    2V
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    20V
  • Pulsed Drain Current-Max (IDM)
    460A
  • Avalanche Energy Rating (Eas)
    460 mJ
  • Recovery Time
    33 ns
  • Height
    2.26mm
  • Length
    6.7056mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRLR3717PBF Description IRLR3717PBF is a 20V N-Channel HEXFET Power MOSFET packaged in a D-Pak. The IRLR3717PBF may be replaced with the IRLR7843, IRLR8743 instead of the IRLR3717PBF.
IRLR3717PBF Features Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V VGS
Fully Characterized Avalanche Voltage and Current
Type: n-channel
Drain-to-Source Breakdown Voltage: 20 V
Gate-to-Source Voltage, max: ?à20 V
Drain-Source On-State Resistance, max: 4.2 m|?
Continuous Drain Current: 120 A
Total Gate Charge: 21 nC
Power Dissipation: 89 W
Package: D-PAK
IRLR3717PBF Applications Lead-Free
High-Frequency Synchronous Buck Converters for Computer Processor Power
High-Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use


IRLR3717PBF More Descriptions
IRLR3717PBF N-channel MOSFET Transistor, 120 A, 20 V, 3-Pin DPAK
Single N-Channel 20 V 5.5 mOhm 31 nC HEXFET® Power Mosfet - TO-252AA
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 30A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, LOGIC, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:20V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:89W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:120A; Package / Case:DPAK; Power Dissipation Pd:89W; Power Dissipation Pd:89W; Pulse Current Idm:460A; SMD Marking:IRLR3717; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRLR3717PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Recovery Time
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Surface Mount
    Configuration
    Drain Current-Max (Abs) (ID)
    Pbfree Code
    Terminal Position
    Reach Compliance Code
    Pin Count
    Qualification Status
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    View Compare
  • IRLR3717PBF
    IRLR3717PBF
    Infineon Technologies
    15 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    4MOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    20V
    MOSFET (Metal Oxide)
    GULL WING
    260
    120A
    30
    R-PSSO-G2
    1
    89W Tc
    Single
    ENHANCEMENT MODE
    89W
    DRAIN
    14 ns
    N-Channel
    SWITCHING
    4m Ω @ 15A, 10V
    2.45V @ 250μA
    2830pF @ 10V
    120A Tc
    31nC @ 4.5V
    14ns
    4.5V 10V
    ±20V
    16 ns
    5.8 ns
    120A
    2V
    TO-252AA
    20V
    20V
    460A
    460 mJ
    33 ns
    2.26mm
    6.7056mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLR2705TRRPBF
    IRLR2705TRRPBF
    Infineon Technologies
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2005
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    68W Tc
    Single
    -
    46W
    -
    8.9 ns
    N-Channel
    -
    40mOhm @ 17A, 10V
    2V @ 250μA
    880pF @ 25V
    28A Tc
    25nC @ 5V
    100ns
    4V 10V
    ±16V
    29 ns
    21 ns
    28A
    -
    -
    16V
    55V
    -
    -
    -
    2.3876mm
    6.7056mm
    6.22mm
    -
    No
    RoHS Compliant
    -
    D-Pak
    175°C
    -55°C
    55V
    880pF
    65mOhm
    40 mΩ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRLR3717PBF vs IRLR2705TRRPBF
  • IRLR014NTRR
    IRLR014NTRR
    Infineon Technologies
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2001
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    28W Tc
    -
    ENHANCEMENT MODE
    -
    -
    -
    N-Channel
    -
    140m Ω @ 6A, 10V
    1V @ 250μA
    265pF @ 25V
    10A Tc
    7.9nC @ 5V
    -
    4.5V 10V
    ±16V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    55V
    -
    -
    -
    YES
    Single
    10A
    -
    -
    -
    -
    -
    -
    -
    IRLR3717PBF vs IRLR014NTRR
  • IRLR130ATM
    IRLR130ATM
    Fairchild/ON Semiconductor
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    -
    e3
    Obsolete
    1 (Unlimited)
    2
    -
    -
    MATTE TIN
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    R-PSSO-G2
    1
    2.5W Ta 46W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    120m Ω @ 6.5A, 5V
    2V @ 250μA
    755pF @ 25V
    13A Tc
    24nC @ 5V
    -
    5V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    45A
    225 mJ
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    100V
    -
    -
    -
    YES
    SINGLE WITH BUILT-IN DIODE
    13A
    yes
    SINGLE
    unknown
    3
    COMMERCIAL
    0.12Ohm
    100V
    IRLR3717PBF vs IRLR130ATM
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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